公开(公告)号：US20140284808A1

公开(公告)日：2014-09-25

申请号：US14220557

申请日：2014-03-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhide HASEBE ,  Tomoyuki OBU ,  Masaki KUROKAWA

IPC: H01L21/768 ,  H01L21/67 ,  H01L23/498

CPC classification number: H01L21/022 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/3105 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a method of manufacturing a stacked semiconductor device, which includes forming a stacked film on a semiconductor substrate, the stacked film including a plurality of silicon oxide films and a plurality of silicon nitride films, which are alternately arranged on top of each other, and the stacked film being obtained by repeatedly performing a series of operations of forming the silicon oxide film on the semiconductor substrate using one of triethoxysilane, octamethylcyclotetrasiloxane, hexamethyldisilazane and diethylsilane gases, and forming the silicon nitride film on the formed silicon oxide film; etching the silicon nitride films in the stacked film; removing carbons contained in the silicon oxide films, which are not removed in the etching, to reduce a concentration of the carbons; and forming electrodes in regions where the silicon nitride films are etched in the etching.

Abstract translation: 提供了一种叠层半导体器件的制造方法，其包括在半导体衬底上形成层叠膜，所述层叠膜包括交替排列在彼此的多个氧化硅膜和多个氮化硅膜， 并且通过重复地使用三乙氧基硅烷，八甲基环四硅氧烷，六甲基二硅氮烷和二乙基硅烷气体中的一种在半导体衬底上形成氧化硅膜的一系列操作来获得叠层膜，并在所形成的氧化硅膜上形成氮化硅膜; 蚀刻层叠膜中的氮化硅膜; 除去在蚀刻中未除去的氧化硅膜中含有的碳以减少碳的浓度; 以及在蚀刻中蚀刻氮化硅膜的区域中形成电极。

公开(公告)号：US20140187024A1

公开(公告)日：2014-07-03

申请号：US14141777

申请日：2013-12-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomoyuki OBU ,  Takahiro MIYAHARA ,  Tomoyuki NAGATA

IPC: H01L21/02

CPC classification number: H01L21/02532 ,  C23C16/0272 ,  C23C16/24 ,  C30B25/02 ,  C30B25/18 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0262

Abstract: Provided is a method of forming a seed layer as a seed of a thin film on an underlayer, which includes: forming a first seed layer on a surface of the underlayer by heating the underlayer, followed by supplying an aminosilane-based gas onto the surface of the heated underlayer; and forming a second seed layer on the surface of the underlayer with the first seed layer formed thereon by heating the underlayer, followed by supplying a disilane or higher order silane-based gas onto the surface of the heated underlayer.

Abstract translation: 提供一种在底层上形成作为薄膜种子的种子层的方法，其包括：通过加热底层在底层的表面上形成第一种子层，然后将氨基硅烷基气体供应到表面上 的加热底层; 通过加热底层，在其上形成有第一籽晶层的底层表面上形成第二晶种层，然后在加热的底层表面上提供乙硅烷或更高级的硅烷基气体。

公开(公告)号：US20140011371A1

公开(公告)日：2014-01-09

申请号：US13933902

申请日：2013-07-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomoyuki OBU ,  Masaki KUROKAWA

IPC: H01L21/02

CPC classification number: H01L21/02164 ,  C23C16/402 ,  H01L21/02104 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/31111

Abstract: A silicone oxide film forming method includes forming a silicon oxide film on a plurality of target objects by supplying a chlorine atom-containing silicon source into a reaction chamber accommodating the plurality of target objects. Forming the silicon oxide film includes making an interior of the reaction chamber be under a hydrogen atmosphere by supplying a hydrogen gas into the reaction chamber.

Abstract translation: 氧化硅膜形成方法包括通过将含氯原子硅源供应到容纳多个目标物体的反应室中，在多个目标物体上形成氧化硅膜。 形成氧化硅膜包括通过向反应室供应氢气使反应室的内部在氢气氛下形成。

公开(公告)号：US20140251209A1

公开(公告)日：2014-09-11

申请号：US14202587

申请日：2014-03-10

Applicant: Tokyo Electron Limited

Inventor： Tomoyuki OBU ,  Masaki KUROKAWA ,  Hiroki IRIUDA ,  Ken ITABASHI ,  Yasushi TAKEUCHI

IPC: H01L21/673

CPC classification number: H01L21/67303 ,  H01L21/67309

Abstract: A support member includes: a mounting unit having a first main surface and a second main surface, the first main surface being configured to mount a first object to be processed thereon and the second main surface being configured to mount a second object to be processed thereon; and a wall installed in a part of the outer peripheral portion along the outer periphery of the mounting unit, the wall having a first portion protruding in a vertical direction than the first object to be processed mounted on the first main surface of the mounting unit. The inner peripheral surface of the first portion of the wall is formed in a first shape that allows the first object to be processed to be held by the first portion of the wall.

Abstract translation: 支撑构件包括：具有第一主表面和第二主表面的安装单元，所述第一主表面被配置为将待处理的第一物体安装在其上，并且所述第二主表面被配置为将待处理的第二物体安装在其上 ; 以及沿所述安装单元的外周安装在所述外周部的一部分中的壁，所述壁具有在垂直方向上突出的第一部分，所述第一部分安装在所述安装单元的所述第一主表面上。 壁的第一部分的内周表面形成为允许第一物体被处理以由壁的第一部分保持的第一形状。

公开(公告)号：US20140187025A1

公开(公告)日：2014-07-03

申请号：US14141620

申请日：2013-12-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomoyuki OBU ,  Takahiro MIYAHARA ,  Tomoyuki NAGATA

IPC: H01L21/02 ,  C23C16/24 ,  H01L29/04

CPC classification number: H01L21/02532 ,  C23C16/0218 ,  C23C16/24 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/0262

Abstract: Provided is a method of forming a film including a silicon film on a base, including: forming a seed layer on a surface of the base by heating the base and supplying an aminosilane-based gas onto the surface of the heated base; and forming the silicon film on the seed layer by heating the base and supplying a silane-based gas containing no amino group onto the seed layer of the surface of the heated base, wherein a molecule of the aminosilane-based gas used in forming a seed layer comprises two or more silicon atoms.

Abstract translation: 提供一种在基材上形成含有硅膜的膜的方法，包括：通过加热基底并在加热的基底的表面上供给氨基硅烷气体，在基材的表面上形成种子层; 以及通过加热所述基底并将不含氨基的硅烷类气体供给到所述加热基材的表面的种子层上而在所述种子层上形成所述硅膜，其中，用于形成种子的氨基硅烷系气体分子 层包含两个或更多个硅原子。

公开(公告)号：US20140080315A1

公开(公告)日：2014-03-20

申请号：US14029366

申请日：2013-09-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomoyuki OBU ,  Masaki KUROKAWA ,  Hiroki IRIUDA

IPC: H01L21/02

CPC classification number: H01L21/022 ,  C23C16/308 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/45557 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/31111

Abstract: A method of forming a laminated film includes forming a silicon oxide film on a plurality of target objects loaded in a reaction chamber, and forming a silicon oxynitride film on the plurality of target objects by supplying a silicon source, an oxidizing agent and a nitride agent to the reaction chamber, wherein forming the silicon oxide film and forming the silicon oxynitride film are repeatedly performed for a predetermined number of times on the plurality of target objects to form a laminated film including the silicon oxynitride film and the silicon oxide film.

Abstract translation: 形成层压膜的方法包括：在装载在反应室中的多个目标物体上形成氧化硅膜，通过供给硅源，氧化剂和氮化物，在多个目标物体上形成氮氧化硅膜 在反应室中，在多个目标物体上重复进行预定次数的形成氧化硅膜并形成氧氮化硅膜，形成包含氮氧化硅膜和氧化硅膜的层叠膜。

公开(公告)号：US20140011368A1

公开(公告)日：2014-01-09

申请号：US13937902

申请日：2013-07-09

Applicant: Tokyo Electron Limited

Inventor： Tomoyuki OBU ,  Satoshi MIZUNAGA ,  Takehiro OTSUKA

IPC: H01L21/02

CPC classification number: H01L21/02304 ,  C23C16/0272 ,  C23C16/26 ,  H01L21/02115 ,  H01L21/02271

Abstract: According to an embodiment of present disclosure, a method of forming a carbon film on a substrate to be processed is provided. The method includes loading a substrate to be processed with a carbon film formed thereon into a processing chamber of a film forming apparatus (Process 1), and thermally decomposing a hydrocarbon-based carbon source gas in the processing chamber to form a carbon film on the substrate to be processed (Process 2). In Process 2, a film forming temperature of the carbon film is set to a temperature less than a thermal decomposition temperature of a simple substance of the hydrocarbon-based carbon source gas without plasma assistance, the hydrocarbon-based carbon source gas and a thermal decomposition temperature drop gas containing a halogen element are introduced into the processing chamber, and a non-plasma thermal CVD method is performed.

Abstract translation: 根据本公开的实施例，提供了一种在待处理的基板上形成碳膜的方法。 该方法包括将其上形成有碳膜的待处理基板加载到成膜装置的处理室（方法1）中，并且在处理室中热分解烃类碳源气体以在其上形成碳膜 待处理衬底（工艺2）。 在方法2中，将碳膜的成膜温度设定为低于无等离子体辅助的烃系碳源气体的单体的热分解温度的温度，烃类碳源气体和热分解 将含有卤素元素的降温气体引入到处理室中，进行非等离子体热CVD法。

公开(公告)号：US20140004715A1

公开(公告)日：2014-01-02

申请号：US13930596

申请日：2013-06-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomoyuki OBU ,  Masaki KUROKAWA

IPC: H01L21/02

CPC classification number: H01L21/02164 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/31111

Abstract: A method of forming a silicone oxide film includes: forming a silicon oxide film on a plurality of target objects by supplying a chlorine-containing silicon source into a reaction chamber accommodating the plurality of target objects; and modifying the silicon oxide film, which is formed by forming the silicon oxide film, by supplying hydrogen and oxygen or hydrogen and nitrous oxide into the reaction chamber and making an interior of the reaction chamber be under a hydrogen-oxygen atmosphere or a hydrogen-nitrous oxide atmosphere.

Abstract translation: 形成硅氧烷膜的方法包括：通过向容纳多个目标物体的反应室供应含氯硅源，在多个目标物体上形成氧化硅膜; 通过向反应室内供给氢，氧或一氧化二氮并使反应室的内部成为氢氧气氛或氢气氧化膜，形成氧化硅膜而形成氧化硅膜， 一氧化二氮气氛。