公开(公告)号：US20110214736A1

公开(公告)日：2011-09-08

申请号：US13010373

申请日：2011-01-20

Applicant: Tae-Yon LEE ,  Dong-Seok Suh

Inventor： Tae-Yon LEE ,  Dong-Seok Suh

IPC: H01L31/032 ,  H01L29/18

CPC classification number: H01L29/18 ,  H01L31/0322 ,  H01L31/103 ,  H01L31/109 ,  Y02E10/541

Abstract: A photodiode includes a p-type semiconductor material and an n-type chalcogenide compound. The p-type semiconductor material and the n-type chalcogenide compound form a pn-junction.

Abstract translation: 光电二极管包括p型半导体材料和n型硫属化物化合物。 p型半导体材料和n型硫属化物化合物形成pn结。

公开(公告)号：US20130119234A1

公开(公告)日：2013-05-16

申请号：US13615424

申请日：2012-09-13

Applicant: Yong-Jei LEE ,  Young-Gu JIN ,  Tae-Yon LEE ,  Yoon-Dong PARK ,  Eric R. FOSSUM

Inventor： Yong-Jei LEE ,  Young-Gu JIN ,  Tae-Yon LEE ,  Yoon-Dong PARK ,  Eric R. FOSSUM

IPC: H01L27/146 ,  H01L31/103 ,  H01L31/105 ,  H01L31/101

CPC classification number: H01L27/14609 ,  H01L27/1461 ,  H01L31/103 ,  H01L31/105 ,  H01L31/1808 ,  Y02E10/50

Abstract: A unit pixel of a three-dimensional image sensor includes a non-silicon photodetector and at least one readout circuit. The non-silicon photodetector is formed at a silicon substrate, and the non-silicon photodetector comprising at least one of non-silicon materials to generate a photocharge in response to incident light. The at least one readout circuit is formed at the silicon substrate, the at least one readout circuit outputs a sensing signal based on the photocharge, and the sensing signal generates depth information on a distance to an object.

Abstract translation: 三维图像传感器的单位像素包括非硅光电检测器和至少一个读出电路。 非硅光电检测器形成在硅衬底上，非硅光电探测器包括至少一种非硅材料，以响应于入射光产生光电荷。 所述至少一个读出电路形成在所述硅衬底处，所述至少一个读出电路基于所述光电荷输出感测信号，并且所述感测信号产生与物体的距离的深度信息。

公开(公告)号：US20150172573A1

公开(公告)日：2015-06-18

申请号：US14481460

申请日：2014-09-09

Applicant: Yibing Michelle WANG ,  Tae-Yon LEE

Inventor： Yibing Michelle WANG ,  Tae-Yon LEE

IPC: H04N5/363 ,  H01L27/146 ,  H04N5/378

CPC classification number: H04N5/363

Abstract: Provided are an imaging device implementing pseudo correlated double sampling (CDS), a pixel of the imaging device and a control method of the image device. The imaging device includes: a pixel array including a pixel, the pixel including a reset transistor to control a reset of the pixel, a row select transistor to control a selection of the pixel to be read out, and a photodiode configured to generate a current in response to incident light; a readout circuit configured to read out an output signal of the pixel, based on the detected incident light, via a pixel output line; a feedback loop configured to receive a voltage from the pixel output line and to apply a reset gate voltage to a gate terminal of the reset transistor based on the received voltage; and a controller configured to control an application of a row select signal to the row select transistor to select the pixel to be read out, and to selectively add an offset to the photodiode to prevent the pixel from being reset despite the reset gate voltage applied to the reset transistor.

Abstract translation: 提供了实现伪相关双采样（CDS），成像设备的像素和图像设备的控制方法的成像设备。 该成像装置包括：包括像素的像素阵列，该像素包括用于控制像素的复位的复位晶体管，用于控制要读出的像素的选择的行选择晶体管，以及被配置为产生电流的光电二极管 响应入射光; 读出电路，被配置为经由像素输出线，基于检测到的入射光读出所述像素的输出信号; 反馈回路，被配置为基于所接收的电压从所述像素输出线接收电压并且将复位栅极电压施加到所述复位晶体管的栅极端子; 以及控制器，被配置为控制对行选择晶体管的行选择信号的应用以选择要读出的像素，并且选择性地向光电二极管添加偏移，以防止复位栅极电压施加到像素 复位晶体管。

公开(公告)号：US20120249740A1

公开(公告)日：2012-10-04

申请号：US13432704

申请日：2012-03-28

Applicant: Tae-Yon LEE ,  Joon-Ho LEE ,  Yoon-Dong PARK ,  Kyoung-Ho HA ,  Yong-Jei LEE ,  Kwang-Hyuk BAE ,  Kyu-Min KYUNG ,  Tae-Chan KIM

Inventor： Tae-Yon LEE ,  Joon-Ho LEE ,  Yoon-Dong PARK ,  Kyoung-Ho HA ,  Yong-Jei LEE ,  Kwang-Hyuk BAE ,  Kyu-Min KYUNG ,  Tae-Chan KIM

IPC: H04N13/02 ,  H01L27/146

CPC classification number: H04N13/271 ,  H04N13/207 ,  H04N13/254

Abstract: A three-dimensional image sensor may include a light source module configured to emit at least one light to an object, a sensing circuit configured to polarize a received light that represents the at least one light reflected from the object and configured to convert the polarized light to electrical signals, and a control unit configured to control the light source module and sensing circuit. A camera may include a receiving lens; a sensor module configured to generate depth data, the depth data including depth information of objects based on a received light from the objects; an engine unit configured to generate a depth map of the objects based on the depth data, configured to segment the objects in the depth map, and configured to generate a control signal for controlling the receiving lens based on the segmented objects; and a motor unit configured to control focusing of the receiving lens.

Abstract translation: 三维图像传感器可以包括：被配置为向对象发射至少一个光的光源模块;感测电路，被配置为使表示从物体反射的至少一个光的接收光偏振，并且被配置为将偏振光 以及被配置为控制光源模块和感测电路的控制单元。 相机可以包括接收透镜; 传感器模块，被配置为生成深度数据，所述深度数据包括基于来自所述对象的接收光的对象的深度信息; 发动机单元，被配置为基于所述深度数据生成所述对象的深度图，所述深度图被配置为在所述深度图中分割所述对象，并​​且被配置为基于所述分割对象生成用于控制所述接收透镜的控制信号; 以及被配置为控制所述接收透镜的聚焦的马达单元。

公开(公告)号：US20120205607A1

公开(公告)日：2012-08-16

申请号：US13455297

申请日：2012-04-25

Applicant: Tae-Yon LEE

Inventor： Tae-Yon LEE

IPC: H01L45/00 ,  B82Y99/00

CPC classification number: H01L45/1233 ,  H01L27/2409 ,  H01L45/06 ,  H01L45/1246 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1683 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/778

Abstract: A PRAM device includes a lower electrode, a phase-change nanowire and an upper electrode. The phase-change nanowire may be electrically connected to the lower electrode and includes a single element. The upper electrode may be electrically connected to the phase-change nanowires.

Abstract translation: PRAM器件包括下电极，相变纳米线和上电极。 相变纳米线可以电连接到下电极并且包括单个元件。 上电极可以电连接到相变纳米线。