公开(公告)号：US20230402508A1

公开(公告)日：2023-12-14

申请号：US18128061

申请日：2023-03-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Wei CHANG ,  Shahaji B. MORE ,  Lun-Kuang TAN ,  Chi-Yu CHOU ,  Yueh-Ching PAI

IPC: H01L29/06 ,  H01L27/092 ,  H01L29/423 ,  H01L29/775 ,  H01L29/66 ,  H01L29/786 ,  H01L21/8238

CPC classification number: H01L29/0673 ,  H01L27/092 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/66439 ,  H01L29/78696 ,  H01L21/823807 ,  H01L21/823814

Abstract: A semiconductor device and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a substrate, a fin base disposed on the substrate, a stack of nanostructured channel regions disposed on a first portion of the fin base, a gate structure surrounding the nanostructured channel regions, a source/drain (S/D) region disposed on a second portion of the fin base, an air spacer disposed between the S/D region and the fin base, and a dielectric layer disposed between the air spacer and the fin base.

公开(公告)号：US20210111027A1

公开(公告)日：2021-04-15

申请号：US17128408

申请日：2020-12-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Yu LIN ,  Chi-Yu CHOU ,  Hsien-Ming LEE ,  Huai-Tei YANG ,  Chun-Chieh WANG ,  Yueh-Ching PAI ,  Chi-Jen YANG ,  Tsung-Ta TANG ,  Yi-Ting WANG

IPC: H01L21/28 ,  H01L29/49 ,  H01L21/3213 ,  H01L21/285

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method of fabricating a semiconductor structure. The method includes forming an opening in a substrate and depositing a conformal metal layer in the opening. The depositing includes performing one or more deposition cycles. The deposition includes flowing a first precursor into a deposition chamber and purging the deposition chamber to remove at least a portion of the first precursor. The method also includes flowing a second precursor into the deposition chamber to form a sublayer of the conformal metal layer and purging the deposition chamber to remove at least a portion of the second precursor. The method further includes performing a metallic halide etching (MHE) process that includes flowing a third precursor into the deposition chamber.