公开(公告)号：US11152332B2

公开(公告)日：2021-10-19

申请号：US17030420

申请日：2020-09-24

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Nick Samra ,  Alan Roth ,  Eric Soenen ,  Stefan Rusu ,  Paul Ranucci

IPC分类号： G05F1/59 ,  H01L25/065 ,  H01L21/66 ,  H01L25/18 ,  H01L23/00 ,  G05F1/595 ,  H01L21/82 ,  H01L49/02 ,  H01L23/522

摘要： A device includes a semiconductor die. The semiconductor die has formed thereon a plurality of multi-phase voltage regulator modules of the same design formed on a common semiconductor substrate.

公开(公告)号：US10522509B2

公开(公告)日：2019-12-31

申请号：US16202639

申请日：2018-11-28

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Nick Samra ,  Alan Roth ,  Eric Soenen ,  Stefan Rusu ,  Paul Ranucci

IPC分类号： G05F1/59 ,  H01L25/065 ,  H01L21/66 ,  H01L25/18 ,  H01L23/00 ,  G05F1/595 ,  H01L21/82 ,  H01L49/02

摘要： A device includes a semiconductor die. The semiconductor die has formed thereon a plurality of multi-phase voltage regulator modules of the same design formed on a common semiconductor substrate.

公开(公告)号：US10825797B2

公开(公告)日：2020-11-03

申请号：US16523320

申请日：2019-07-26

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Nick Samra ,  Alan Roth ,  Eric Soenen ,  Stefan Rusu ,  Paul Ranucci

IPC分类号： G05F1/59 ,  H01L25/065 ,  H01L21/66 ,  H01L25/18 ,  H01L23/00 ,  G05F1/595 ,  H01L21/82 ,  H01L49/02 ,  H01L23/522

摘要： A device includes a semiconductor die. The semiconductor die has formed thereon a plurality of multi-phase voltage regulator modules of the same design formed on a common semiconductor substrate.

公开(公告)号：US20190115318A1

公开(公告)日：2019-04-18

申请号：US16202639

申请日：2018-11-28

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Nick Samra ,  Alan Roth ,  Eric Soenen ,  Stefan Rusu ,  Paul Ranucci

IPC分类号： H01L25/065 ,  H01L21/66 ,  H01L25/18 ,  H01L23/00 ,  H01L21/82 ,  H01L49/02 ,  G05F1/595

摘要： A device includes a semiconductor die. The semiconductor die has formed thereon a plurality of multi-phase voltage regulator modules of the same design formed on a common semiconductor substrate.

公开(公告)号：US20190115317A1

公开(公告)日：2019-04-18

申请号：US15782885

申请日：2017-10-13

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Nick Samra ,  Alan Roth ,  Eric Soenen ,  Stefan Rusu ,  Paul Ranucci

IPC分类号： H01L25/065 ,  G05F1/595 ,  H01L25/18 ,  H01L21/66 ,  H01L23/00 ,  H01L21/82 ,  H01L49/02

CPC分类号： H01L25/0655 ,  G05F1/59 ,  G05F1/595 ,  H01L21/82 ,  H01L22/14 ,  H01L23/5227 ,  H01L24/10 ,  H01L24/98 ,  H01L25/18 ,  H01L28/10 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2924/15192 ,  H01L2924/15311

摘要： A device includes a semiconductor die. The semiconductor die has formed thereon a plurality of multi-phase voltage regulator modules of the same design formed on a common semiconductor substrate.

公开(公告)号：US11671010B2

公开(公告)日：2023-06-06

申请号：US16991335

申请日：2020-08-12

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Alan Roth ,  Haohua Zhou ,  Eric Soenen ,  Ying-Chih Hsu ,  Paul Ranucci ,  Mei Hsu Wong ,  Tze-Chiang Huang

IPC分类号： H02M3/156 ,  H01L23/498 ,  H01L23/58 ,  H01L23/495

CPC分类号： H02M3/156 ,  H01L23/49589 ,  H01L23/49811 ,  H01L23/49838 ,  H01L23/58

摘要： A semiconductor structure includes a first substrate. A first die and a second die are disposed over the first substrate and are adjacent to one another. A plurality of first conductive bumps are disposed between the first substrate and the first die and between the first substrate and the second die. A second substrate is disposed below the first substrate. A plurality of second conductive bumps is disposed between the first substrate and the second substrate. An in-package voltage regulator (PVR) chip is disposed over the second substrate. A molding material is disposed over the first substrate and surrounds the first die, the second die, the plurality of first conductive bumps, the plurality of second conductive bumps, and the PVR chip.

公开(公告)号：US11282916B2

公开(公告)日：2022-03-22

申请号：US15882676

申请日：2018-01-29

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Alan Roth ,  Eric Soenen ,  Paul Ranucci

IPC分类号： H01F27/24 ,  H01L49/02 ,  H01F27/28 ,  H01F17/00

摘要： Various magnetic thin film inductor structures are disclosed that include one or more magnetic thin film (MTF) materials. During operation, an electric field passes through one or mare conductive windings which, in turn, generates a magnetic field for storing energy within these magnetic thin film inductor structures. The magnetic thin film (MTF) materials within these magnetic thin film inductor structures effectively attract magnetic flux lines of this magnetic field. As a result, any magnetic leakage resulting from the magnetic field generated by these magnetic thin film inductor structures onto nearby electrical, mechanical, and/or electro-mechanical devices is lessened when compared to magnetic leakage resulting from the magnetic field generated by other inductor structures not having the one or more MTF materials.

公开(公告)号：US20210249952A1

公开(公告)日：2021-08-12

申请号：US16991335

申请日：2020-08-12

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Alan Roth ,  Haohua Zhou ,  Eric Soenen ,  Ying-Chih Hsu ,  Paul Ranucci ,  Mei Hsu Wong ,  Tze-Chiang Huang

IPC分类号： H02M3/156 ,  H01L23/498 ,  H01L23/495 ,  H01L23/58

摘要： A semiconductor structure includes a first substrate. A first die and a second die are disposed over the first substrate and are adjacent to one another. A plurality of first conductive bumps are disposed between the first substrate and the first die and between the first substrate and the second die. A second substrate is disposed below the first substrate. A plurality of second conductive bumps is disposed between the first substrate and the second substrate. An in-package voltage regulator (PVR) chip is disposed over the second substrate. A molding material is disposed over the first substrate and surrounds the first die, the second die, the plurality of first conductive bumps, the plurality of second conductive bumps, and the PVR chip.

公开(公告)号：US20210013179A1

公开(公告)日：2021-01-14

申请号：US17030420

申请日：2020-09-24

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Nick Samra ,  Alan Roth ,  Eric Soenen ,  Stefan Rusu ,  Paul Ranucci

IPC分类号： H01L25/065 ,  H01L21/66 ,  H01L25/18 ,  H01L23/00 ,  G05F1/595 ,  H01L21/82 ,  H01L49/02 ,  G05F1/59 ,  H01L23/522

摘要： A device includes a semiconductor die. The semiconductor die has formed thereon a plurality of multi-phase voltage regulator modules of the same design formed on a common semiconductor substrate.

公开(公告)号：US10403600B2

公开(公告)日：2019-09-03

申请号：US15782885

申请日：2017-10-13

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Nick Samra ,  Alan Roth ,  Eric Soenen ,  Stefan Rusu ,  Paul Ranucci

IPC分类号： G05F1/59 ,  H01L25/065 ,  H01L21/66 ,  H01L25/18 ,  H01L23/00 ,  G05F1/595 ,  H01L21/82 ,  H01L49/02

摘要： A device includes a semiconductor die. The semiconductor die has formed thereon a plurality of multi-phase voltage regulator modules of the same design formed on a common semiconductor substrate.