公开(公告)号：US20240079270A1

公开(公告)日：2024-03-07

申请号：US18507759

申请日：2023-11-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Huei-Wen Hsieh ,  Kai-Shiang Kuo ,  Cheng-Hui Weng ,  Chun-Sheng Chen ,  Wen-Hsuan Chen

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L21/76882 ,  H01L21/7684 ,  H01L21/76846 ,  H01L21/76862 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53238 ,  H01L27/0886

Abstract: A method of forming a semiconductor device includes forming an opening in a dielectric layer, and forming a barrier layer in the opening. A combined liner layer is formed over the barrier layer by first forming a first liner layer over the barrier layer, and forming a second liner layer over the first liner layer, such that the first liner layer and the second liner layer intermix. A conductive material layer is formed over the combined liner layer, and a thermal process is performed to reflow the conductive material layer.

公开(公告)号：US20210202310A1

公开(公告)日：2021-07-01

申请号：US17066706

申请日：2020-10-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Huei-Wen Hsieh ,  Kai-Shiang Kuo ,  Cheng-Hui Weng ,  Chun-Sheng Chen ,  Wen-Hsuan Chen

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/522 ,  H01L23/532

Abstract: A method of forming a semiconductor device includes forming an opening in a dielectric layer, and forming a barrier layer in the opening. A combined liner layer is formed over the barrier layer by first forming a first liner layer over the barrier layer, and forming a second liner layer over the first liner layer, such that the first liner layer and the second liner layer intermix. A conductive material layer is formed over the combined liner layer, and a thermal process is performed to reflow the conductive material layer.

公开(公告)号：US20220367376A1

公开(公告)日：2022-11-17

申请号：US17815026

申请日：2022-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Pang Kuo ,  Huan-Yu Shih ,  Wen-Hsuan Chen ,  Cheng-Lun Tsai ,  Ya-Lien Lee ,  Cheng-Hui Weng ,  Chun-Chieh Lin ,  Hung-Wen Su ,  Yao-Min Liu

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528

Abstract: A method includes forming an insulating layer over a conductive feature; etching the insulating layer to expose a first surface of the conductive feature; covering the first surface of the conductive feature with a sacrificial material, wherein the sidewalls of the insulating layer are free of the sacrificial material; covering the sidewalls of the insulating layer with a barrier material, wherein the first surface of the conductive feature is free of the barrier material, wherein the barrier material includes tantalum nitride (TaN) doped with a transition metal; removing the sacrificial material; and covering the barrier material and the first surface of the conductive feature with a conductive material.

公开(公告)号：US20240395617A1

公开(公告)日：2024-11-28

申请号：US18790994

申请日：2024-07-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Huei-Wen Hsieh ,  Kai-Shiang Kuo ,  Cheng-Hui Weng ,  Chun-Sheng Chen ,  Wen-Hsuan Chen

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L27/088

Abstract: A method of forming a semiconductor device includes forming an opening in a dielectric layer, and forming a barrier layer in the opening. A combined liner layer is formed over the barrier layer by first forming a first liner layer over the barrier layer, and forming a second liner layer over the first liner layer, such that the first liner layer and the second liner layer intermix. A conductive material layer is formed over the combined liner layer, and a thermal process is performed to reflow the conductive material layer.

公开(公告)号：US11854878B2

公开(公告)日：2023-12-26

申请号：US17066706

申请日：2020-10-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Huei-Wen Hsieh ,  Kai-Shiang Kuo ,  Cheng-Hui Weng ,  Chun-Sheng Chen ,  Wen-Hsuan Chen

IPC: H01L25/065 ,  H01L25/00 ,  H01L21/768 ,  H01L23/00 ,  H01L23/532 ,  H01L23/31 ,  H01L23/528 ,  H01L23/522 ,  H01L27/088

CPC classification number: H01L21/76882 ,  H01L21/7684 ,  H01L21/76846 ,  H01L21/76862 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53238 ,  H01L27/0886

Abstract: A method of forming a semiconductor device includes forming an opening in a dielectric layer, and forming a barrier layer in the opening. A combined liner layer is formed over the barrier layer by first forming a first liner layer over the barrier layer, and forming a second liner layer over the first liner layer, such that the first liner layer and the second liner layer intermix. A conductive material layer is formed over the combined liner layer, and a thermal process is performed to reflow the conductive material layer.

公开(公告)号：US11676898B2

公开(公告)日：2023-06-13

申请号：US16899055

申请日：2020-06-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Pang Kuo ,  Huan-Yu Shih ,  Wen-Hsuan Chen ,  Cheng-Lun Tsai ,  Ya-Lien Lee ,  Cheng-Hui Weng ,  Chun-Chieh Lin ,  Hung-Wen Su ,  Yao-Min Liu

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L23/53238 ,  H01L21/0262 ,  H01L21/02458 ,  H01L21/76831 ,  H01L21/76843 ,  H01L23/5226 ,  H01L23/5283

Abstract: A method includes forming an insulating layer over a conductive feature; etching the insulating layer to expose a first surface of the conductive feature; covering the first surface of the conductive feature with a sacrificial material, wherein the sidewalls of the insulating layer are free of the sacrificial material; covering the sidewalls of the insulating layer with a barrier material, wherein the first surface of the conductive feature is free of the barrier material, wherein the barrier material includes tantalum nitride (TaN) doped with a transition metal; removing the sacrificial material; and covering the barrier material and the first surface of the conductive feature with a conductive material.

公开(公告)号：US20220367265A1

公开(公告)日：2022-11-17

申请号：US17873941

申请日：2022-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Huei-Wen Hsieh ,  Kai-Shiang Kuo ,  Cheng-Hui Weng ,  Chun-Sheng Chen ,  Wen-Hsuan Chen

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/522 ,  H01L23/532

Abstract: A method of forming a semiconductor device includes forming an opening in a dielectric layer, and forming a barrier layer in the opening. A combined liner layer is formed over the barrier layer by first forming a first liner layer over the barrier layer, and forming a second liner layer over the first liner layer, such that the first liner layer and the second liner layer intermix. A conductive material layer is formed over the combined liner layer, and a thermal process is performed to reflow the conductive material layer.

公开(公告)号：US20210391275A1

公开(公告)日：2021-12-16

申请号：US16899055

申请日：2020-06-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Pang Kuo ,  Huan-Yu Shih ,  Wen-Hsuan Chen ,  Cheng-Lun Tsai ,  Ya-Lien Lee ,  Cheng-Hui Weng ,  Chun-Chieh Lin ,  Hung-Wen Su ,  Yao-Min Liu

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/02 ,  H01L23/522 ,  H01L23/528

Abstract: A method includes forming an insulating layer over a conductive feature; etching the insulating layer to expose a first surface of the conductive feature; covering the first surface of the conductive feature with a sacrificial material, wherein the sidewalls of the insulating layer are free of the sacrificial material; covering the sidewalls of the insulating layer with a barrier material, wherein the first surface of the conductive feature is free of the barrier material, wherein the barrier material includes tantalum nitride (TaN) doped with a transition metal; removing the sacrificial material; and covering the barrier material and the first surface of the conductive feature with a conductive material.