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公开(公告)号：US08652258B2
公开(公告)日：2014-02-18
申请号：US13067117
申请日：2011-05-10
IPC分类号： C23C16/00 , C23C16/455 , C23C16/46 , C23C16/52 , H01L21/306
摘要： It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas.
摘要翻译： 旨在提供能够在选择性外延生长中调节生长速度和蚀刻速度两者的基板处理装置，从而避免从喷嘴产生颗粒，并获得良好的蚀刻特性。 一种基板处理装置，其通过向处理室交替地供给含有硅和蚀刻气体的原料气体来选择性地在基板的表面上生长外延膜，所述基板处理装置设置有用于将基板支撑于基板的基板支撑部件 所述处理室，设置在所述处理室的外部用于加热所述基板的加热部件和所述处理室的气氛，设置在所述处理室内部的气体供给系统和在所述处理室上开放的排出口，所述气体供给系统包括： 用于供给原料气体的第一气体供给喷嘴和用于供给蚀刻气体的第二气体供给喷嘴。
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公开(公告)号：US20080135516A1
公开(公告)日：2008-06-12
申请号：US11979816
申请日：2007-11-08
摘要： It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas.
摘要翻译： 旨在提供能够在选择性外延生长中调节生长速度和蚀刻速度两者的基板处理装置，从而避免从喷嘴产生颗粒，并获得良好的蚀刻特性。 一种基板处理装置，其通过向处理室交替地供给含有硅和蚀刻气体的原料气体来选择性地在基板的表面上生长外延膜，所述基板处理装置设置有用于将基板支撑于基板的基板支撑部件 所述处理室，设置在所述处理室的外部用于加热所述基板的加热部件和所述处理室的气氛，设置在所述处理室内部的气体供给系统和在所述处理室上开放的排出口，所述气体供给系统包括： 用于供给原料气体的第一气体供给喷嘴和用于供给蚀刻气体的第二气体供给喷嘴。
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公开(公告)号：US20110212623A1
公开(公告)日：2011-09-01
申请号：US13067117
申请日：2011-05-10
IPC分类号： H01L21/306 , H01L21/302
摘要： It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas.
摘要翻译： 旨在提供能够在选择性外延生长中调节生长速度和蚀刻速度两者的基板处理装置，从而避免从喷嘴产生颗粒，并获得良好的蚀刻特性。 一种基板处理装置，其通过向处理室交替地供给含有硅和蚀刻气体的原料气体来选择性地在基板的表面上生长外延膜，所述基板处理装置设置有用于将基板支撑于基板的基板支撑部件 所述处理室，设置在所述处理室的外部用于加热所述基板的加热部件和所述处理室的气氛，设置在所述处理室内部的气体供给系统和在所述处理室上开放的排出口，所述气体供给系统包括： 用于供给原料气体的第一气体供给喷嘴和用于供给蚀刻气体的第二气体供给喷嘴。
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4.发明授权公开(公告)号：US08466049B2
公开(公告)日：2013-06-18
申请号：US11921562
申请日：2006-07-25
IPC分类号： H01L21/20
CPC分类号： C23C16/45523 , C23C16/24 , C30B25/02 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02636
摘要： Disclosed is a producing method of a semiconductor device, including: loading a silicon substrate into a processing chamber, the silicon substrate having a silicon nitride film or a silicon oxide film on at least a portion of a surface thereof and a silicon surface being exposed from the surface; and alternately repeating a first introducing at least a silane-compound gas into the processing chamber and a second introducing at least etching gas a plurality of times to selectively grow an epitaxial film on the silicon surface, wherein the alternate repeating is started with the second introducing prior to the first introducing.
摘要翻译： 公开了一种半导体器件的制造方法，包括：将硅衬底装载到处理室中，所述硅衬底在其表面的至少一部分上具有氮化硅膜或氧化硅膜，并且硅表面暴露于 表面 并且交替地重复首先将至少一种硅烷化合物气体引入到所述处理室中，以及第二次引入至少蚀刻气体多次以在所述硅表面上选择性地生长外延膜，其中所述交替重复开始于所述第二引入 在第一次介绍之前。
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公开(公告)号：US20090104740A1
公开(公告)日：2009-04-23
申请号：US11921562
申请日：2006-07-25
申请人： Yasuhiro Inokuchi , Astushi Moriya , Kastusuhiko Yamamoto , Yoshiaki Hashiba , Takashi Yokogawa
发明人： Yasuhiro Inokuchi , Astushi Moriya , Kastusuhiko Yamamoto , Yoshiaki Hashiba , Takashi Yokogawa
IPC分类号： H01L21/8232
CPC分类号： C23C16/45523 , C23C16/24 , C30B25/02 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02636
摘要： Disclosed is a producing method of a semiconductor device, including: loading a silicon substrate into a processing chamber, the silicon substrate having a silicon nitride film or a silicon oxide film on at least a portion of a surface thereof and a silicon surface being exposed from the surface; and alternately repeating a first introducing at least a silane-compound gas into the processing chamber and a second introducing at least etching gas a plurality of times to selectively grow an epitaxial film on the silicon surface, wherein the alternate repeating is started with the second introducing prior to the first introducing.
摘要翻译： 公开了一种半导体器件的制造方法，包括：将硅衬底装载到处理室中，所述硅衬底在其表面的至少一部分上具有氮化硅膜或氧化硅膜，并且硅表面暴露于 表面 并且交替地重复首先将至少一种硅烷化合物气体引入到所述处理室中，以及第二次引入至少蚀刻气体多次以在所述硅表面上选择性地生长外延膜，其中所述交替重复开始于所述第二引入 在第一次介绍之前。
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公开(公告)号：US08025739B2
公开(公告)日：2011-09-27
申请号：US12571706
申请日：2009-10-01
IPC分类号： B08B7/02
CPC分类号： C23C16/4405 , Y10S438/905
摘要： In a dry cleaning process, breakage of a gas supply pipe can be prevented, and maintenance efficiency can be increased. There is provided a method of manufacturing a semiconductor device, comprising: (a) loading a substrate into a process chamber; (b) forming a silicon film or a silicon compound film on the substrate loaded in the process chamber by supplying a raw-material gas to a gas supply pipe disposed in the process chamber to introduce the raw-material gas into the process chamber; (c) unloading the substrate from the process chamber; (d) heating an inside of the process chamber after unloading the substrate to generate a crack in a thin film formed inside the process chamber; (e) decreasing an inside temperature of the process chamber after carrying out the step (d) with the substrate unloaded from the process chamber; and (f) introducing a cleaning gas into the process chamber by supplying the cleaning gas to the gas supply pipe after the step (e) with the substrate unloaded from the process chamber.
摘要翻译： 在干洗过程中，可以防止气体供给管的破损，并且可以提高维护效率。 提供一种制造半导体器件的方法，包括：（a）将衬底装载到处理室中; （b）通过向设置在处理室中的气体供给管供给原料气体，将原料气体引入处理室，在装载在处理室中的基板上形成硅膜或硅化合物膜; （c）从处理室卸载基板; （d）在卸载基板之后加热处理室的内部，以在处理室内形成的薄膜产生裂纹; （e）在从所述处理室卸载的所述基板进行步骤（d）之后降低所述处理室的内部温度; 以及（f）通过在步骤（e）之后通过从处理室卸载基板将清洁气体供给到气体供给管，将清洁气体引入处理室。
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公开(公告)号：US20110226418A1
公开(公告)日：2011-09-22
申请号：US13150277
申请日：2011-06-01
CPC分类号： C23C16/4405 , Y10S438/905
摘要： In a dry cleaning process, breakage of a gas supply pipe can be prevented, and maintenance efficiency can be increased. There is provided a substrate processing apparatus comprising: a process chamber configured to process a substrate; a heater configured to heat an inside of the process chamber; a gas supply pipe installed in the process chamber; a gas supply system configured to supply at least a cleaning gas to the gas supply pipe to introduce the cleaning gas into the process chamber; and a control unit configured to control the heater and gas supply system with the substrate unloaded from the process chamber to perform heating an inside of the process chamber to generate a crack in a thin film formed inside the process chamber; decreasing an inside temperature of the process chamber after the crack is generated in the thin film; and introducing the cleaning gas into the process chamber by supplying the cleaning gas to the gas supply pipe after the inside temperature of the process chamber is decreased.
摘要翻译： 在干洗过程中，可以防止气体供给管的破损，并且可以提高维护效率。 提供了一种基板处理装置，包括：处理室，被配置为处理基板; 加热器，其构造成加热所述处理室的内部; 安装在处理室中的气体供给管; 气体供给系统，被配置为至少向所述气体供给管供给清洁气体，以将所述清洁气体引入所述处理室; 以及控制单元，被配置为通过从处理室卸载的基板来控制加热器和气体供给系统，以对处理室的内部进行加热，以在处理室内形成的薄膜产生裂纹; 在薄膜中产生裂纹后降低处理室的内部温度; 并且在处理室的内部温度降低之后，通过向气体供给管供给清洁气体，将清洁气体引入处理室。
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公开(公告)号：US20100087068A1
公开(公告)日：2010-04-08
申请号：US12571706
申请日：2009-10-01
IPC分类号： H01L21/30
CPC分类号： C23C16/4405 , Y10S438/905
摘要： In a dry cleaning process, breakage of a gas supply pipe can be prevented, and maintenance efficiency can be increased. There is provided a method of manufacturing a semiconductor device, the method including: loading a substrate into a process chamber; forming a silicon film or a silicon compound film on the substrate loaded in the process chamber by supplying a raw-material gas to a gas supply pipe disposed in the process chamber to introduce the raw-material gas into the process chamber; unloading the substrate from the process chamber; heating an inside of the process chamber; decreasing an inside temperature of the process chamber after the heating of the inside of the process chamber; and introducing cleaning gas into the process chamber by supplying the cleaning gas to the gas supply pipe after the decreasing of the inside temperature of the process chamber.
摘要翻译： 在干洗过程中，可以防止气体供给管的破损，并且可以提高维护效率。 提供一种制造半导体器件的方法，该方法包括：将衬底加载到处理室中; 通过向设置在处理室中的气体供给管供给原料气体，将原料气体引入处理室，在装载在处理室中的基板上形成硅膜或硅化合物膜; 从处理室卸载基板; 加热处理室的内部; 在处理室的内部加热之后降低处理室的内部温度; 并且在处理室的内部温度降低之后，通过向气体供给管供给清洁气体，将清洁气体引入到处理室中。
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9.发明授权Semiconductor memory device including floating gates and control gates, control method for the same, and memory card including the same 有权包括浮动栅极和控制栅极的半导体存储器件，用于其的控制方法和包括其的存储卡公开(公告)号：US07280407B2
公开(公告)日：2007-10-09
申请号：US11087576
申请日：2005-03-24
摘要： A semiconductor memory device includes memory cells, a memory cell array, word lines, a first charge pump circuit, and a discharge circuit. The memory cell has a first MOS transistor with a stacked gate including a floating gate and a control gate. The memory cell array includes the memory cells arranged in a matrix. The word line connects commonly the control gates of the first MOS transistors in a same row. The first charge pump circuit is activated and generates a first voltage in a write operation and erase operation. The first voltage is supplied with either the well region or the word lines. The discharge circuit, when the first charge pump circuit is deactivated, discharges the charge generated by the first charge pump circuit to ground or to a power-supply potential, while causing current to flow to an output node of the first voltage.
摘要翻译： 半导体存储器件包括存储单元，存储单元阵列，字线，第一电荷泵电路和放电电路。 存储单元具有包括浮置栅极和控制栅极的堆叠栅极的第一MOS晶体管。 存储单元阵列包括排列成矩阵的存储单元。 字线通常连接在同一行中的第一MOS晶体管的控制栅极。 第一电荷泵电路被激活，并且在写入操作和擦除操作中产生第一电压。 第一电压供应阱区或字线。 放电电路当第一电荷泵电路被去激活时，将由第一电荷泵电路产生的电荷放电到地或电源电位，同时使电流流到第一电压的输出节点。
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10.发明申请Method for manufacturing semiconductor device and substrate processing apparatus 审中-公开半导体装置及基板处理装置的制造方法公开(公告)号：US20060240677A1
公开(公告)日：2006-10-26
申请号：US10528450
申请日：2003-09-19
申请人： Sadayoshi Horii , Hironobu Miya , Yoshiaki Hashiba
发明人： Sadayoshi Horii , Hironobu Miya , Yoshiaki Hashiba
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L21/6715
摘要： An oxidizer supply device (30) comprises an ozonizer (31) for generating ozone (32), a bubbler (34) wherein deionized water (35) is kept and an ozone supply pipe (33) for supplying ozone (32) from the ozonizer (31) is immersed in the deionized water (35) so as to bubble ozone, and a supply pipe (36) for supplying oxidizer (37) containing OH* generated by bubbling of the ozone (32). The device (30) is connected to a feed pipe (18) of an oxide film forming device (10). The oxidizer containing OH* generated by bubbling ozone in the water possesses a powerful oxidizing effect so oxide film can be formed on the wafer at a relatively low temperature in a short time. Semiconductor devices or circuit patterns previously formed on the wafer can be prevented from being damaged by plasma since no plasma is used. The throughput, performance and reliability of the oxide film forming device are therefore improved.
摘要翻译： 氧化剂供给装置（30）包括用于产生臭氧的臭氧发生器（31），保持去离子水（35）的起泡器（34）和用于从臭氧发生器（32）供应臭氧的臭氧供应管（33） （31）浸入去离子水（35）中以使臭氧气泡;以及供给管（36），用于供给氧化剂（37），该氧化剂含有通过臭氧（32）的鼓泡产生的OH *。 装置（30）连接到氧化膜形成装置（10）的进料管（18）。 通过在水中产生臭氧而产生的含有OH *的氧化剂具有强大的氧化效果，因此可以在短时间内以较低的温度在晶片上形成氧化膜。 预先形成在晶片上的半导体器件或电路图案可以防止被等离子体损坏，因为不使用等离子体。 因此，氧化膜形成装置的生产量，性能和可靠性得到改善。
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