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1.发明授权公开(公告)号：US08466049B2
公开(公告)日：2013-06-18
申请号：US11921562
申请日：2006-07-25
IPC分类号： H01L21/20
CPC分类号： C23C16/45523 , C23C16/24 , C30B25/02 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02636
摘要： Disclosed is a producing method of a semiconductor device, including: loading a silicon substrate into a processing chamber, the silicon substrate having a silicon nitride film or a silicon oxide film on at least a portion of a surface thereof and a silicon surface being exposed from the surface; and alternately repeating a first introducing at least a silane-compound gas into the processing chamber and a second introducing at least etching gas a plurality of times to selectively grow an epitaxial film on the silicon surface, wherein the alternate repeating is started with the second introducing prior to the first introducing.
摘要翻译： 公开了一种半导体器件的制造方法，包括：将硅衬底装载到处理室中，所述硅衬底在其表面的至少一部分上具有氮化硅膜或氧化硅膜，并且硅表面暴露于 表面 并且交替地重复首先将至少一种硅烷化合物气体引入到所述处理室中，以及第二次引入至少蚀刻气体多次以在所述硅表面上选择性地生长外延膜，其中所述交替重复开始于所述第二引入 在第一次介绍之前。
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公开(公告)号：US08652258B2
公开(公告)日：2014-02-18
申请号：US13067117
申请日：2011-05-10
IPC分类号： C23C16/00 , C23C16/455 , C23C16/46 , C23C16/52 , H01L21/306
摘要： It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas.
摘要翻译： 旨在提供能够在选择性外延生长中调节生长速度和蚀刻速度两者的基板处理装置，从而避免从喷嘴产生颗粒，并获得良好的蚀刻特性。 一种基板处理装置，其通过向处理室交替地供给含有硅和蚀刻气体的原料气体来选择性地在基板的表面上生长外延膜，所述基板处理装置设置有用于将基板支撑于基板的基板支撑部件 所述处理室，设置在所述处理室的外部用于加热所述基板的加热部件和所述处理室的气氛，设置在所述处理室内部的气体供给系统和在所述处理室上开放的排出口，所述气体供给系统包括： 用于供给原料气体的第一气体供给喷嘴和用于供给蚀刻气体的第二气体供给喷嘴。
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公开(公告)号：US20080135516A1
公开(公告)日：2008-06-12
申请号：US11979816
申请日：2007-11-08
摘要： It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas.
摘要翻译： 旨在提供能够在选择性外延生长中调节生长速度和蚀刻速度两者的基板处理装置，从而避免从喷嘴产生颗粒，并获得良好的蚀刻特性。 一种基板处理装置，其通过向处理室交替地供给含有硅和蚀刻气体的原料气体来选择性地在基板的表面上生长外延膜，所述基板处理装置设置有用于将基板支撑于基板的基板支撑部件 所述处理室，设置在所述处理室的外部用于加热所述基板的加热部件和所述处理室的气氛，设置在所述处理室内部的气体供给系统和在所述处理室上开放的排出口，所述气体供给系统包括： 用于供给原料气体的第一气体供给喷嘴和用于供给蚀刻气体的第二气体供给喷嘴。
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公开(公告)号：US20110212623A1
公开(公告)日：2011-09-01
申请号：US13067117
申请日：2011-05-10
IPC分类号： H01L21/306 , H01L21/302
摘要： It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas.
摘要翻译： 旨在提供能够在选择性外延生长中调节生长速度和蚀刻速度两者的基板处理装置，从而避免从喷嘴产生颗粒，并获得良好的蚀刻特性。 一种基板处理装置，其通过向处理室交替地供给含有硅和蚀刻气体的原料气体来选择性地在基板的表面上生长外延膜，所述基板处理装置设置有用于将基板支撑于基板的基板支撑部件 所述处理室，设置在所述处理室的外部用于加热所述基板的加热部件和所述处理室的气氛，设置在所述处理室内部的气体供给系统和在所述处理室上开放的排出口，所述气体供给系统包括： 用于供给原料气体的第一气体供给喷嘴和用于供给蚀刻气体的第二气体供给喷嘴。
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公开(公告)号：US20080199610A1
公开(公告)日：2008-08-21
申请号：US12071259
申请日：2008-02-19
IPC分类号： C23C16/44
CPC分类号： C23C16/54 , C23C16/45578 , C23C16/4584 , H01L21/67109
摘要： To move a substrate mounting part, on which substrates are stacked and mounted, when processing gas is supplied into a processing chamber and processing is applied to a surface of each substrate.
摘要翻译： 为了移动衬底安装部分，在其上堆叠并安装衬底，当处理气体被供应到处理室中并且处理被施加到每个衬底的表面时。
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6.发明申请Manufacturing method of semiconductor device and substrate processing apparatus 有权半导体器件和衬底处理设备的制造方法公开(公告)号：US20080090389A1
公开(公告)日：2008-04-17
申请号：US11902288
申请日：2007-09-20
申请人： Jie Wang , Yasuhiro Ogawa , Katsuhiko Yamamoto , Takashi Yokogawa
发明人： Jie Wang , Yasuhiro Ogawa , Katsuhiko Yamamoto , Takashi Yokogawa
IPC分类号： H01L21/205 , C23C16/02
CPC分类号： H01L21/02661 , C23C16/0227 , C23C16/24 , C30B25/02 , C30B29/06 , H01L21/02057 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02634 , H01L21/67109
摘要： To provide a manufacturing method of a semiconductor device, comprising: loading a substrate, with a silicon surface exposed at a part of the substrate, into a processing chamber; heating an inside of said processing chamber; performing pre-processing of supplying at least silane-based gas, halogen-based gas, and hydrogen gas into said processing chamber, removing at least a natural oxide film or a contaminated matter that exist on a surface of said silicon surface, and growing an epitaxial film on said silicon surface; and supplying gas containing at least silicon into said processing chamber after said pre-processing, and further growing the epitaxial film on said epitaxial film.
摘要翻译： 为了提供一种半导体器件的制造方法，包括：将在衬底的一部分露出的硅表面的衬底加载到处理室中; 加热所述处理室的内部; 执行至少将硅烷类气体，卤素类气体和氢气供给到所述处理室中的预处理，至少除去存在于所述硅表面的至少一种天然氧化物膜或污染物质， 所述硅表面上的外延膜; 并且在所述预处理之后将至少含有硅的气体供应到所述处理室中，并且进一步在所述外延膜上生长所述外延膜。
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7.发明授权Manufacturing method of semiconductor device and substrate processing apparatus 有权半导体器件和衬底处理设备的制造方法公开(公告)号：US08123858B2
公开(公告)日：2012-02-28
申请号：US11902288
申请日：2007-09-20
申请人： Jie Wang , Yasuhiro Ogawa , Katsuhiko Yamamoto , Takashi Yokogawa
发明人： Jie Wang , Yasuhiro Ogawa , Katsuhiko Yamamoto , Takashi Yokogawa
IPC分类号： C30B21/02
CPC分类号： H01L21/02661 , C23C16/0227 , C23C16/24 , C30B25/02 , C30B29/06 , H01L21/02057 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02634 , H01L21/67109
摘要： To provide a manufacturing method of a semiconductor device, comprising: loading a substrate, with a silicon surface exposed at a part of the substrate, into a processing chamber; heating an inside of said processing chamber; performing pre-processing of supplying at least silane-based gas, halogen-based gas, and hydrogen gas into said processing chamber, removing at least a natural oxide film or a contaminated matter that exist on a surface of said silicon surface, and growing an epitaxial film on said silicon surface; and supplying gas containing at least silicon into said processing chamber after said pre-processing, and further growing the epitaxial film on said epitaxial film.
摘要翻译： 为了提供一种半导体器件的制造方法，包括：将在衬底的一部分露出的硅表面的衬底加载到处理室中; 加热所述处理室的内部; 执行至少将硅烷类气体，卤素类气体和氢气供给到所述处理室中的预处理，至少除去存在于所述硅表面的至少一种天然氧化物膜或污染物质， 所述硅表面上的外延膜; 并且在所述预处理之后将至少含有硅的气体供应到所述处理室中，并且进一步在所述外延膜上生长所述外延膜。
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8.发明申请SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE 有权半导体器件制造方法，衬底加工设备和半导体器件公开(公告)号：US20120086107A1
公开(公告)日：2012-04-12
申请号：US13250708
申请日：2011-09-30
IPC分类号： H01L29/02 , H01L21/26 , C23C16/511
CPC分类号： H01L21/67115 , C23C16/405 , C23C16/56 , H01L21/02189 , H01L21/0228 , H01L21/02337 , H01L21/02345 , H01L28/40
摘要： A semiconductor device manufacturing method includes loading a substrate, on which a high-k film is formed, into a processing chamber, performing a reforming process by heating the high-k film through irradiation of a microwave on the substrate, and unloading the substrate from the processing chamber.
摘要翻译： 一种半导体器件制造方法，包括将形成有高k膜的衬底加载到处理室中，通过在衬底上照射微波加热高k膜并进行重整处理，并将衬底从 处理室。
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9.发明授权Method of fabricating non-volatile semiconductor memory device by using plasma film-forming method and plasma nitridation 有权通过等离子体成膜法和等离子体氮化法制造非易失性半导体存储器件的方法公开(公告)号：US08084315B2
公开(公告)日：2011-12-27
申请号：US12622816
申请日：2009-11-20
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/8238 , H01L29/792
CPC分类号： H01L21/28282 , H01L21/0214 , H01L21/02332 , H01L21/0234 , H01L21/28273 , H01L21/3115 , H01L21/3144 , H01L29/513 , H01L29/518 , H01L29/7885
摘要： A technique capable of improving the memory retention characteristics of a non-volatile memory is provided. In particular, a technique of fabricating a non-volatile semiconductor memory device is provided capable of enhancing the film quality of a silicon oxide film even when a silicon oxide film as a first potential barrier film is formed with a plasma oxidation method to improve the memory retention characteristics of the non-volatile memory. After a silicon oxide film, which is a main component of a first potential barrier film, is formed with a plasma oxidation method, plasma nitridation at a high temperature and a heat treatment in an atmosphere containing nitric oxide are performed in combination, thereby forming a silicon oxynitride film on the surface of the silicon oxide film, and segregating nitrogen to an interface between the silicon oxide film and a semiconductor substrate.
摘要翻译： 提供了一种能够提高非易失性存储器的记忆保持特性的技术。 特别地，提供一种制造非挥发性半导体存储器件的技术，即使用等离子体氧化法形成作为第一势垒膜的氧化硅膜来提高氧化硅膜的膜质量，从而提高记忆性 非易失性存储器的保留特性。 在作为第一势垒膜的主要成分的氧化硅膜之后，通过等离子体氧化法形成，在高温下进行等离子体氮化，并且在含有一氧化氮的气氛中进行热处理，从而形成 在氧化硅膜的表面上形成氮氧化硅膜，并将氮分离成氧化硅膜和半导体衬底之间的界面。
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公开(公告)号：US20090029416A1
公开(公告)日：2009-01-29
申请号：US11945771
申请日：2007-11-27
申请人： Hikaru Takakura , Mio Morishita , Katsuhiko Yamamoto , Masanori Mitta , Kiyozo Asada , Susumu Tsunasawa , Ikunoshin Kato
发明人： Hikaru Takakura , Mio Morishita , Katsuhiko Yamamoto , Masanori Mitta , Kiyozo Asada , Susumu Tsunasawa , Ikunoshin Kato
CPC分类号： C12N9/52
摘要： There are provided hyperthermostable proteases having an amino acid sequences represented by SEQ ID Nos. 1, 3 and 5 of the Sequence Listing or functional equivalents thereof and hyperthermostable protease genes encoding those hyperthermostable protease. There is also disclosed a process for preparation of a hyperthermostable protease by culturing a transformant containing the gene.
摘要翻译： 提供了具有由序列表的SEQ ID No.1,3和5表示的氨基酸序列或其功能等同物的超热稳定蛋白酶和编码那些超热稳定蛋白酶的超热稳定蛋白酶基因。 还公开了通过培养含有该基因的转化体来制备超热稳定蛋白酶的方法。
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