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公开(公告)号：US20090104740A1
公开(公告)日：2009-04-23
申请号：US11921562
申请日：2006-07-25
申请人： Yasuhiro Inokuchi , Astushi Moriya , Kastusuhiko Yamamoto , Yoshiaki Hashiba , Takashi Yokogawa
发明人： Yasuhiro Inokuchi , Astushi Moriya , Kastusuhiko Yamamoto , Yoshiaki Hashiba , Takashi Yokogawa
IPC分类号： H01L21/8232
CPC分类号： C23C16/45523 , C23C16/24 , C30B25/02 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02636
摘要： Disclosed is a producing method of a semiconductor device, including: loading a silicon substrate into a processing chamber, the silicon substrate having a silicon nitride film or a silicon oxide film on at least a portion of a surface thereof and a silicon surface being exposed from the surface; and alternately repeating a first introducing at least a silane-compound gas into the processing chamber and a second introducing at least etching gas a plurality of times to selectively grow an epitaxial film on the silicon surface, wherein the alternate repeating is started with the second introducing prior to the first introducing.
摘要翻译： 公开了一种半导体器件的制造方法，包括：将硅衬底装载到处理室中，所述硅衬底在其表面的至少一部分上具有氮化硅膜或氧化硅膜，并且硅表面暴露于 表面 并且交替地重复首先将至少一种硅烷化合物气体引入到所述处理室中，以及第二次引入至少蚀刻气体多次以在所述硅表面上选择性地生长外延膜，其中所述交替重复开始于所述第二引入 在第一次介绍之前。
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公开(公告)号：US20080135516A1
公开(公告)日：2008-06-12
申请号：US11979816
申请日：2007-11-08
摘要： It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas.
摘要翻译： 旨在提供能够在选择性外延生长中调节生长速度和蚀刻速度两者的基板处理装置，从而避免从喷嘴产生颗粒，并获得良好的蚀刻特性。 一种基板处理装置，其通过向处理室交替地供给含有硅和蚀刻气体的原料气体来选择性地在基板的表面上生长外延膜，所述基板处理装置设置有用于将基板支撑于基板的基板支撑部件 所述处理室，设置在所述处理室的外部用于加热所述基板的加热部件和所述处理室的气氛，设置在所述处理室内部的气体供给系统和在所述处理室上开放的排出口，所述气体供给系统包括： 用于供给原料气体的第一气体供给喷嘴和用于供给蚀刻气体的第二气体供给喷嘴。
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公开(公告)号：US08652258B2
公开(公告)日：2014-02-18
申请号：US13067117
申请日：2011-05-10
IPC分类号： C23C16/00 , C23C16/455 , C23C16/46 , C23C16/52 , H01L21/306
摘要： It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas.
摘要翻译： 旨在提供能够在选择性外延生长中调节生长速度和蚀刻速度两者的基板处理装置，从而避免从喷嘴产生颗粒，并获得良好的蚀刻特性。 一种基板处理装置，其通过向处理室交替地供给含有硅和蚀刻气体的原料气体来选择性地在基板的表面上生长外延膜，所述基板处理装置设置有用于将基板支撑于基板的基板支撑部件 所述处理室，设置在所述处理室的外部用于加热所述基板的加热部件和所述处理室的气氛，设置在所述处理室内部的气体供给系统和在所述处理室上开放的排出口，所述气体供给系统包括： 用于供给原料气体的第一气体供给喷嘴和用于供给蚀刻气体的第二气体供给喷嘴。
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4.发明授权公开(公告)号：US08466049B2
公开(公告)日：2013-06-18
申请号：US11921562
申请日：2006-07-25
IPC分类号： H01L21/20
CPC分类号： C23C16/45523 , C23C16/24 , C30B25/02 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02636
摘要： Disclosed is a producing method of a semiconductor device, including: loading a silicon substrate into a processing chamber, the silicon substrate having a silicon nitride film or a silicon oxide film on at least a portion of a surface thereof and a silicon surface being exposed from the surface; and alternately repeating a first introducing at least a silane-compound gas into the processing chamber and a second introducing at least etching gas a plurality of times to selectively grow an epitaxial film on the silicon surface, wherein the alternate repeating is started with the second introducing prior to the first introducing.
摘要翻译： 公开了一种半导体器件的制造方法，包括：将硅衬底装载到处理室中，所述硅衬底在其表面的至少一部分上具有氮化硅膜或氧化硅膜，并且硅表面暴露于 表面 并且交替地重复首先将至少一种硅烷化合物气体引入到所述处理室中，以及第二次引入至少蚀刻气体多次以在所述硅表面上选择性地生长外延膜，其中所述交替重复开始于所述第二引入 在第一次介绍之前。
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公开(公告)号：US20110212623A1
公开(公告)日：2011-09-01
申请号：US13067117
申请日：2011-05-10
IPC分类号： H01L21/306 , H01L21/302
摘要： It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas.
摘要翻译： 旨在提供能够在选择性外延生长中调节生长速度和蚀刻速度两者的基板处理装置，从而避免从喷嘴产生颗粒，并获得良好的蚀刻特性。 一种基板处理装置，其通过向处理室交替地供给含有硅和蚀刻气体的原料气体来选择性地在基板的表面上生长外延膜，所述基板处理装置设置有用于将基板支撑于基板的基板支撑部件 所述处理室，设置在所述处理室的外部用于加热所述基板的加热部件和所述处理室的气氛，设置在所述处理室内部的气体供给系统和在所述处理室上开放的排出口，所述气体供给系统包括： 用于供给原料气体的第一气体供给喷嘴和用于供给蚀刻气体的第二气体供给喷嘴。
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公开(公告)号：US09045825B2
公开(公告)日：2015-06-02
申请号：US13398523
申请日：2012-02-16
IPC分类号： C23C16/34 , C23C16/40 , C23C16/455 , H01L21/02 , C23C16/30 , C23C16/54 , H01L21/285
CPC分类号： C23C16/45544 , C23C16/308 , C23C16/34 , C23C16/40 , C23C16/405 , C23C16/45523 , C23C16/45527 , C23C16/45531 , C23C16/45561 , C23C16/45578 , C23C16/52 , C23C16/54 , H01L21/02172 , H01L21/0228 , H01L21/02697 , H01L21/28562
摘要： Provided are a semiconductor device manufacturing method and a substrate processing apparatus that are capable of increasing a work function of a film to be formed, in comparison with a related art. A cycle including (a) supplying a metal-containing gas into a processing chamber where a substrate is accommodated (b) supplying a nitrogen-containing gas into the processing chamber; and (c) supplying one of an oxygen-containing gas, a halogen-containing gas and a combination thereof into the processing chamber, is performed a plurality of times to form a metal-containing film on the substrate.
摘要翻译： 提供了与现有技术相比能够增加要形成的膜的功函数的半导体器件制造方法和衬底处理装置。 一种循环，包括（a）将含金属的气体供给到容纳基板的处理室中（b）向处理室供应含氮气体; 和（c）向处理室供给含氧气体，含卤素气体及其组合中的一种，进行多次以在基板上形成含金属膜。
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7.发明授权Method of manufacturing semiconductor device and substrate processing apparatus 有权制造半导体器件和衬底处理设备的方法公开(公告)号：US08691708B2
公开(公告)日：2014-04-08
申请号：US13012320
申请日：2011-01-24
IPC分类号： H01L21/31
CPC分类号： H01L21/32051 , C23C16/34 , C23C16/45523 , C23C16/45574 , H01L21/28556 , H01L21/28562
摘要： A method of manufacturing a semiconductor device and a substrate processing apparatus capable of providing a TiN film at a higher film-forming rate. The method includes loading a substrate into a processing chamber; simultaneously starting a supply of a first processing gas and a second processing gas to form a film on the substrate, simultaneously stopping the supply of the first and second processing gas; removing the remaining first and second processing gas from the processing chamber; supplying the second processing gas into the processing chamber without supplying the first processing gas; removing the second processing gas starting and then stopping a supply of the first processing gas into the processing chamber without supplying the second processing gas; removing the first processing gas; and unloading the substrate from the processing chamber.
摘要翻译： 一种制造半导体器件的方法和能够以更高的成膜速度提供TiN膜的衬底处理设备。 该方法包括将衬底加载到处理室中; 同时开始供应第一处理气体和第二处理气体以在基板上形成膜，同时停止供应第一和第二处理气体; 从处理室中除去剩余的第一和第二处理气体; 在不提供第一处理气体的情况下将第二处理气体供应到处理室中; 除去所述第二处理气体，然后停止将所述第一处理气体供给到所述处理室中，而不供给所述第二处理气体; 去除第一处理气体; 并从处理室卸载基板。
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8.发明申请Method For Site-Specifically Introducing Non-Natural Amino Acid Into Protien Using Mitochondrial Protein and Method For Effectively Preparing Trna 审中-公开使用线粒体蛋白将非天然氨基酸引入Protien的方法及有效制备Trna的方法公开(公告)号：US20090023139A1
公开(公告)日：2009-01-22
申请号：US11791150
申请日：2005-11-22
申请人： Kazuya Nishikawa , Takashi Yokogawa , Satoshi Ohno
发明人： Kazuya Nishikawa , Takashi Yokogawa , Satoshi Ohno
摘要： This invention is intended to provide a protein synthesis system used for producing a tryptophan analogue-containing non-natural-amino-acid-containing protein that satisfies the following conditions: (i) tRNA that transfers a non-natural amino acid is not recognized by an endogenous aminoacyl tRNA synthetase (aaRS); (ii) it is recognized selectively by aaRS exclusive for a non-natural amino acid; and (iii) endogenous tRNA is not recognized by aaRS exclusive for a non-natural amino acid. In the eukaryotic organism-derived cell-free protein synthesis system, a yeast mitochondrial tryptophanyl tRNA synthetase is used in combination with mitochondrial tRNATrp (mt tRNATrp).
摘要翻译： 本发明旨在提供一种蛋白质合成系统，其用于制备含有色氨酸类似物的含有非天然氨基酸的蛋白质，其满足以下条件：（i）转移非天然氨基酸的tRNA不被 内源氨酰tRNA合成酶（aaRS）; （ii）aaRS选择性地被非天然氨基酸所独占; 和（iii）内源性tRNA不被非天然氨基酸排除的aaRS识别。 在真核生物来源的无细胞蛋白质合成系统中，酵母线粒体色氨酸tRNA合成酶与线粒体tRNATrp（mt tRNATrp）组合使用。
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9.发明授权Method of manufacturing semiconductor device, substrate processing apparatus, and semiconductor device 有权制造半导体器件，衬底处理设备和半导体器件的方法公开(公告)号：US09466477B2
公开(公告)日：2016-10-11
申请号：US12849398
申请日：2010-08-03
IPC分类号： H01L21/02 , C23C16/34 , C23C16/455 , C23C16/52 , H01L21/285
CPC分类号： H01L21/0228 , C23C16/34 , C23C16/45523 , C23C16/45544 , C23C16/45563 , C23C16/52 , H01L21/02104 , H01L21/02172 , H01L21/02225 , H01L21/02263 , H01L21/02271 , H01L21/28506
摘要： There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a source owing to its dense structure, and a low resistivity. The method is performed by simultaneously supplying two or more kinds of sources into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first source supply process by supplying at least one kind of source into the processing chamber at a first supply flow rate; and performing a second source supply process by supplying the at least one kind of source into the processing chamber at a second supply flow rate different from the first supply flow rate.
摘要翻译： 提供了制造半导体器件，衬底处理设备和半导体器件的方法。 该方法允许快速形成导电膜，其由于其致密的结构而具有从源极渗透的低浓度的杂质和低电阻率。 该方法通过同时将两种或更多种源提供到处理室中以在放置在处理室中的基板上形成膜来执行。 该方法包括：以第一供应流量将至少一种源提供到处理室中来执行第一源供应过程; 以及通过以与第一供给流量不同的第二供给流量将至少一种源提供到处理室来执行第二源供给处理。
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10.发明授权Manufacturing method of semiconductor device and substrate processing apparatus 有权半导体器件和衬底处理设备的制造方法公开(公告)号：US08123858B2
公开(公告)日：2012-02-28
申请号：US11902288
申请日：2007-09-20
申请人： Jie Wang , Yasuhiro Ogawa , Katsuhiko Yamamoto , Takashi Yokogawa
发明人： Jie Wang , Yasuhiro Ogawa , Katsuhiko Yamamoto , Takashi Yokogawa
IPC分类号： C30B21/02
CPC分类号： H01L21/02661 , C23C16/0227 , C23C16/24 , C30B25/02 , C30B29/06 , H01L21/02057 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02634 , H01L21/67109
摘要： To provide a manufacturing method of a semiconductor device, comprising: loading a substrate, with a silicon surface exposed at a part of the substrate, into a processing chamber; heating an inside of said processing chamber; performing pre-processing of supplying at least silane-based gas, halogen-based gas, and hydrogen gas into said processing chamber, removing at least a natural oxide film or a contaminated matter that exist on a surface of said silicon surface, and growing an epitaxial film on said silicon surface; and supplying gas containing at least silicon into said processing chamber after said pre-processing, and further growing the epitaxial film on said epitaxial film.
摘要翻译： 为了提供一种半导体器件的制造方法，包括：将在衬底的一部分露出的硅表面的衬底加载到处理室中; 加热所述处理室的内部; 执行至少将硅烷类气体，卤素类气体和氢气供给到所述处理室中的预处理，至少除去存在于所述硅表面的至少一种天然氧化物膜或污染物质， 所述硅表面上的外延膜; 并且在所述预处理之后将至少含有硅的气体供应到所述处理室中，并且进一步在所述外延膜上生长所述外延膜。
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