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公开(公告)号：US07993951B2
公开(公告)日：2011-08-09
申请号：US12792844
申请日：2010-06-03
IPC分类号： H01L21/00
CPC分类号： H01L27/14687 , H01L21/28518 , H01L27/14632
摘要： In a method of manufacturing a photoelectric conversion device having a pixel region and a peripheral circuit region, a semiconductor compound layer is formed by causing a surface of a diffusion layer or gate electrode of a MOS transistor in the peripheral circuit region to react with a high melting point metal, then an insulating layer is formed in the pixel region and the peripheral circuit region after the step of forming a semiconductor compound layer. A contact hole is formed in the insulating layer to expose a diffusion layer in the pixel region, and a contact hole is formed in the insulating layer to expose the semiconductor compound layer formed in the peripheral circuit region. These holes are formed at different timings. Prior to forming the hole which is formed later, a contact plug is formed in the contact hole which is formed earlier.
摘要翻译： 在制造具有像素区域和外围电路区域的光电转换装置的方法中，通过使外围电路区域中的MOS晶体管的扩散层或栅电极的表面与高电位反应来形成半导体化合物层 熔点金属，则在形成半导体化合物层的步骤之后，在像素区域和外围电路区域中形成绝缘层。 在绝缘层中形成接触孔，以露出像素区域中的扩散层，并且在绝缘层中形成接触孔以暴露形成在外围电路区域中的半导体化合物层。 这些孔在不同的时刻形成。 在形成稍后形成的孔之前，在较早形成的接触孔中形成接触塞。
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公开(公告)号：US08293559B2
公开(公告)日：2012-10-23
申请号：US13161959
申请日：2011-06-16
IPC分类号： H01L21/00
CPC分类号： H01L27/14687 , H01L21/28518 , H01L27/14632
摘要： In a method of manufacturing a photoelectric conversion device having a pixel region and a peripheral circuit region, a semiconductor compound layer is formed by causing a surface of a diffusion layer or gate electrode of a MOS transistor in the peripheral circuit region to react with a high melting point metal, then an insulating layer is formed in the pixel region and the peripheral circuit region after the step of forming a semiconductor compound layer. A contact hole is formed in the insulating layer to expose a diffusion layer in the pixel region, and a contact hole is formed in the insulating layer to expose the semiconductor compound layer formed in the peripheral circuit region. These holes are formed at different timings. Prior to forming the hole which is formed later, a contact plug is formed in the contact hole which is formed earlier.
摘要翻译： 在制造具有像素区域和外围电路区域的光电转换装置的方法中，通过使外围电路区域中的MOS晶体管的扩散层或栅电极的表面与高电位反应来形成半导体化合物层 熔点金属，则在形成半导体化合物层的步骤之后，在像素区域和外围电路区域中形成绝缘层。 在绝缘层中形成接触孔，以露出像素区域中的扩散层，并且在绝缘层中形成接触孔以暴露形成在外围电路区域中的半导体化合物层。 这些孔在不同的时刻形成。 在形成稍后形成的孔之前，在较早形成的接触孔中形成接触塞。
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公开(公告)号：US20110244627A1
公开(公告)日：2011-10-06
申请号：US13161959
申请日：2011-06-16
CPC分类号： H01L27/14687 , H01L21/28518 , H01L27/14632
摘要： In a method of manufacturing a photoelectric conversion device having a pixel region and a peripheral circuit region, a semiconductor compound layer is formed by causing a surface of a diffusion layer or gate electrode of a MOS transistor in the peripheral circuit region to react with a high melting point metal, then an insulating layer is formed in the pixel region and the peripheral circuit region after the step of forming a semiconductor compound layer. A contact hole is formed in the insulating layer to expose a diffusion layer in the pixel region, and a contact hole is formed in the insulating layer to expose the semiconductor compound layer formed in the peripheral circuit region. These holes are formed at different timings. Prior to forming the hole which is formed later, a contact plug is formed in the contact hole which is formed earlier.
摘要翻译： 在制造具有像素区域和外围电路区域的光电转换装置的方法中，通过使外围电路区域中的MOS晶体管的扩散层或栅电极的表面与高电位反应来形成半导体化合物层 熔点金属，则在形成半导体化合物层的步骤之后，在像素区域和外围电路区域中形成绝缘层。 在绝缘层中形成接触孔，以露出像素区域中的扩散层，并且在绝缘层中形成接触孔以暴露形成在外围电路区域中的半导体化合物层。 这些孔在不同的时刻形成。 在形成稍后形成的孔之前，在较早形成的接触孔中形成接触塞。
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公开(公告)号：US20100330723A1
公开(公告)日：2010-12-30
申请号：US12792844
申请日：2010-06-03
IPC分类号： H01L31/18
CPC分类号： H01L27/14687 , H01L21/28518 , H01L27/14632
摘要： In a method of manufacturing a photoelectric conversion device having a pixel region and a peripheral circuit region, a semiconductor compound layer is formed by causing a surface of a diffusion layer or gate electrode of a MOS transistor in the peripheral circuit region to react with a high melting point metal, then an insulating layer is formed in the pixel region and the peripheral circuit region after the step of forming a semiconductor compound layer. A contact hole is formed in the insulating layer to expose a diffusion layer in the pixel region, and a contact hole is formed in the insulating layer to expose the semiconductor compound layer formed in the peripheral circuit region. These holes are formed at different timings. Prior to forming the hole which is formed later, a contact plug is formed in the contact hole which is formed earlier.
摘要翻译： 在制造具有像素区域和外围电路区域的光电转换装置的方法中，通过使外围电路区域中的MOS晶体管的扩散层或栅电极的表面与高电位反应来形成半导体化合物层 熔点金属，则在形成半导体化合物层的步骤之后，在像素区域和外围电路区域中形成绝缘层。 在绝缘层中形成接触孔，以露出像素区域中的扩散层，并且在绝缘层中形成接触孔以暴露形成在外围电路区域中的半导体化合物层。 这些孔在不同的时刻形成。 在形成稍后形成的孔之前，在较早形成的接触孔中形成接触塞。
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5.发明授权公开(公告)号：US08304278B2
公开(公告)日：2012-11-06
申请号：US12904269
申请日：2010-10-14
IPC分类号： H01L31/18
CPC分类号： H01L27/14636 , H01L21/76807 , H01L21/7681 , H01L21/76829 , H01L21/76834 , H01L23/53238 , H01L27/14621 , H01L27/14632 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L2924/0002 , H01L2924/00
摘要： A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.
摘要翻译： 光电转换装置包括：设置在半导体衬底上的第一层间绝缘膜; 第一插头，其设置在第一层间绝缘膜中的第一孔中，并且用于电连接多个MOS晶体管的栅电极之间或者在有源区和栅极之间设置在半导体衬底中的多个有源区之间 MOS晶体管的电极，不通过布线层的布线; 以及设置在所述第一层间绝缘膜中的第二孔中的第二插头，所述第二插头电连接到所述有源区域，其中布置在所述第二插头上并且最靠近所述第二插头的布线电连接到所述第二插头，以及 电连接到第二插头的布线形成双镶嵌结构的一部分。 通过这样的结构，可以提高光到光电转换元件的入射效率。
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6.发明授权Photoelectric conversion device, image sensing system, and method of manufacturing photoelectric conversion device 有权光电转换装置，图像感测系统以及光电转换装置的制造方法公开(公告)号：US08389923B2
公开(公告)日：2013-03-05
申请号：US12853547
申请日：2010-08-10
申请人： Hiroaki Naruse , Ryuichi Mishima
发明人： Hiroaki Naruse , Ryuichi Mishima
IPC分类号： H01L27/00 , H01L31/00 , H01L31/0232
CPC分类号： H01L27/14625 , H01L27/14609 , H01L27/14632
摘要： A photoelectric conversion device having a pixel array region in which a plurality of pixels each including a photoelectric converter are arrayed, and a peripheral region arranged around the pixel array region, the device comprising a multilayer wiring structure which is arranged on a semiconductor substrate, and includes wiring layers in the peripheral region more than wiring layers in the pixel array region, and a plurality of interlayer lenses which is arranged on the multilayer wiring structure in the pixel array region, wherein the plurality of interlayer lenses each includes a first insulator, and a second insulator arranged to cover the first insulator, and having a refractive index higher than the first insulator, and wherein the first insulator in each of the plurality of interlayer lenses, and an uppermost interlayer insulating film in the peripheral region in the multilayer wiring structure are made of an identical material.
摘要翻译： 具有像素阵列区域的光电转换装置，其中排列有包括光电转换器的多个像素，以及围绕像素阵列区域布置的周边区域，该装置包括布置在半导体衬底上的多层布线结构，以及 包括比像素阵列区域中的布线层更多的边缘区域中的布线层，以及布置在像素阵列区域中的多层布线结构上的多个层间透镜，其中多个层间透镜各自包括第一绝缘体，以及 布置成覆盖第一绝缘体并且具有比第一绝缘体高的折射率的第二绝缘体，并且其中多个层间透镜中的每一个中的第一绝缘体和多层布线结构中的周边区域中的最上层的层间绝缘膜 由相同的材料制成。
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公开(公告)号：US20110171770A1
公开(公告)日：2011-07-14
申请号：US13073321
申请日：2011-03-28
IPC分类号： H01L31/18
CPC分类号： H01L27/307 , H01L27/14603 , H01L27/14625 , H01L27/14643 , H01L27/14689
摘要： A manufacturing method of a photoelectric conversion device included a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a protection region of a second conductivity type, which is the opposite conductivity type to the first conductivity type, by implanting ions in the semiconductor region using the gate electrode of the transfer transistor and a portion covering a side face of the gate electrode of the transfer transistor of the insulation film as a mask in a state in which the semiconductor substrate and the gate electrode of the transfer transistor are covered by the insulation film, and causing a portion of the semiconductor region of the first conductivity type from which the protection region is removed to be the charge accumulation region.
摘要翻译： 光电转换装置的制造方法包括形成栅电极的第一工序，形成第一导电型半导体区域的第二工序，形成绝缘膜的第三工序，形成保护区域的第四工序 第二导电类型与第一导电类型相反的导电类型，通过使用转移晶体管的栅电极在半导体区域中注入离子，以及覆盖转移晶体管的转移晶体管的栅电极的侧面的部分 在半导体基板和转移晶体管的栅电极被绝缘膜覆盖的状态下作为掩模的绝缘膜，并且使保护区域被去除的第一导电类型的半导体区域的一部分为 电荷累积区域。
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公开(公告)号：US07935557B2
公开(公告)日：2011-05-03
申请号：US12622747
申请日：2009-11-20
IPC分类号： H01L21/266 , H01L21/339
CPC分类号： H01L27/307 , H01L27/14603 , H01L27/14625 , H01L27/14643 , H01L27/14689
摘要： A manufacturing method of a photoelectric conversion device included a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a protection region of a second conductivity type, which is the opposite conductivity type to the first conductivity type, by implanting ions in the semiconductor region using the gate electrode of the transfer transistor and a portion covering a side face of the gate electrode of the transfer transistor of the insulation film as a mask in a state in which the semiconductor substrate and the gate electrode of the transfer transistor are covered by the insulation film, and causing a portion of the semiconductor region of the first conductivity type from which the protection region is removed to be the charge accumulation region.
摘要翻译： 光电转换装置的制造方法包括形成栅电极的第一工序，形成第一导电型半导体区域的第二工序，形成绝缘膜的第三工序，形成保护区域的第四工序 第二导电类型与第一导电类型相反的导电类型，通过使用转移晶体管的栅电极在半导体区域中注入离子，以及覆盖转移晶体管的转移晶体管的栅电极的侧面的部分 在半导体基板和转移晶体管的栅电极被绝缘膜覆盖的状态下作为掩模的绝缘膜，并且使保护区域被去除的第一导电类型的半导体区域的一部分为 电荷累积区域。
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9.发明申请PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS 有权使用光电转换装置的光电转换装置和图像拾取系统公开(公告)号：US20080203450A1
公开(公告)日：2008-08-28
申请号：US12026623
申请日：2008-02-06
IPC分类号： H01L31/00
CPC分类号： H01L27/14636 , H01L21/76807 , H01L21/7681 , H01L21/76829 , H01L21/76834 , H01L23/53238 , H01L27/14621 , H01L27/14632 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L2924/0002 , H01L2924/00
摘要： A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.
摘要翻译： 光电转换装置包括：设置在半导体衬底上的第一层间绝缘膜; 第一插头，其设置在第一层间绝缘膜中的第一孔中，并且用于电连接多个MOS晶体管的栅电极之间或者在有源区和栅极之间设置在半导体衬底中的多个有源区之间 MOS晶体管的电极，不通过布线层的布线; 以及设置在所述第一层间绝缘膜中的第二孔中的第二插头，所述第二插头电连接到所述有源区域，其中布置在所述第二插头上并且最靠近所述第二插头的布线电连接到所述第二插头，以及 电连接到第二插头的布线形成双镶嵌结构的一部分。 通过这样的结构，可以提高光到光电转换元件的入射效率。
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公开(公告)号：US20120181582A1
公开(公告)日：2012-07-19
申请号：US13431113
申请日：2012-03-27
IPC分类号： H01L27/148
CPC分类号： H01L27/307 , H01L27/14603 , H01L27/14625 , H01L27/14643 , H01L27/14689
摘要： A manufacturing method of a photoelectric conversion device comprises a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a protection region of a second conductivity type, which is the opposite conductivity type to the first conductivity type, by implanting ions in the semiconductor region using the gate electrode of the transfer transistor and a portion covering a side face of the gate electrode of the transfer transistor of the insulation film as a mask in a state in which the semiconductor substrate and the gate electrode of the transfer transistor are covered by the insulation film, and causing a portion of the semiconductor region of the first conductivity type from which the protection region is removed to be the charge accumulation region.
摘要翻译： 光电转换装置的制造方法包括形成栅电极的第一工序，形成第一导电型的半导体区域的第二工序，形成绝缘膜的第三工序，形成保护区域的第四工序 第二导电类型与第一导电类型相反的导电类型，通过使用转移晶体管的栅电极在半导体区域中注入离子，以及覆盖转移晶体管的转移晶体管的栅电极的侧面的部分 在半导体基板和转移晶体管的栅电极被绝缘膜覆盖的状态下作为掩模的绝缘膜，并且使保护区域被去除的第一导电类型的半导体区域的一部分为 电荷累积区域。
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