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1.发明申请PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS 有权使用光电转换装置的光电转换装置和图像拾取系统公开(公告)号：US20080203450A1
公开(公告)日：2008-08-28
申请号：US12026623
申请日：2008-02-06
IPC分类号： H01L31/00
CPC分类号： H01L27/14636 , H01L21/76807 , H01L21/7681 , H01L21/76829 , H01L21/76834 , H01L23/53238 , H01L27/14621 , H01L27/14632 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L2924/0002 , H01L2924/00
摘要： A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.
摘要翻译： 光电转换装置包括：设置在半导体衬底上的第一层间绝缘膜; 第一插头，其设置在第一层间绝缘膜中的第一孔中，并且用于电连接多个MOS晶体管的栅电极之间或者在有源区和栅极之间设置在半导体衬底中的多个有源区之间 MOS晶体管的电极，不通过布线层的布线; 以及设置在所述第一层间绝缘膜中的第二孔中的第二插头，所述第二插头电连接到所述有源区域，其中布置在所述第二插头上并且最靠近所述第二插头的布线电连接到所述第二插头，以及 电连接到第二插头的布线形成双镶嵌结构的一部分。 通过这样的结构，可以提高光到光电转换元件的入射效率。
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2.发明申请PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS 有权使用光电转换装置的光电转换装置和图像拾取系统公开(公告)号：US20110027934A1
公开(公告)日：2011-02-03
申请号：US12904269
申请日：2010-10-14
IPC分类号： H01L31/18
CPC分类号： H01L27/14636 , H01L21/76807 , H01L21/7681 , H01L21/76829 , H01L21/76834 , H01L23/53238 , H01L27/14621 , H01L27/14632 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L2924/0002 , H01L2924/00
摘要： A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.
摘要翻译： 光电转换装置包括：设置在半导体衬底上的第一层间绝缘膜; 第一插头，其设置在第一层间绝缘膜中的第一孔中，并且用于电连接多个MOS晶体管的栅电极之间或者在有源区和栅极之间设置在半导体衬底中的多个有源区之间 MOS晶体管的电极，不通过布线层的布线; 以及设置在所述第一层间绝缘膜中的第二孔中的第二插头，所述第二插头电连接到所述有源区域，其中布置在所述第二插头上并且最靠近所述第二插头的布线电连接到所述第二插头，以及 电连接到第二插头的布线形成双镶嵌结构的一部分。 通过这样的结构，可以提高光到光电转换元件的入射效率。
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3.发明授权公开(公告)号：US07838918B2
公开(公告)日：2010-11-23
申请号：US12026623
申请日：2008-02-06
IPC分类号： H01L31/00
CPC分类号： H01L27/14636 , H01L21/76807 , H01L21/7681 , H01L21/76829 , H01L21/76834 , H01L23/53238 , H01L27/14621 , H01L27/14632 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L2924/0002 , H01L2924/00
摘要： A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.
摘要翻译： 光电转换装置包括：设置在半导体衬底上的第一层间绝缘膜; 第一插头，其设置在第一层间绝缘膜中的第一孔中，并且用于电连接多个MOS晶体管的栅电极之间或者在有源区和栅极之间设置在半导体衬底中的多个有源区之间 MOS晶体管的电极，不通过布线层的布线; 以及设置在所述第一层间绝缘膜中的第二孔中的第二插头，所述第二插头电连接到所述有源区域，其中布置在所述第二插头上并且最靠近所述第二插头的布线电连接到所述第二插头，以及 电连接到第二插头的布线形成双镶嵌结构的一部分。 通过这样的结构，可以提高光到光电转换元件的入射效率。
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4.发明授权公开(公告)号：US08304278B2
公开(公告)日：2012-11-06
申请号：US12904269
申请日：2010-10-14
IPC分类号： H01L31/18
CPC分类号： H01L27/14636 , H01L21/76807 , H01L21/7681 , H01L21/76829 , H01L21/76834 , H01L23/53238 , H01L27/14621 , H01L27/14632 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L2924/0002 , H01L2924/00
摘要： A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.
摘要翻译： 光电转换装置包括：设置在半导体衬底上的第一层间绝缘膜; 第一插头，其设置在第一层间绝缘膜中的第一孔中，并且用于电连接多个MOS晶体管的栅电极之间或者在有源区和栅极之间设置在半导体衬底中的多个有源区之间 MOS晶体管的电极，不通过布线层的布线; 以及设置在所述第一层间绝缘膜中的第二孔中的第二插头，所述第二插头电连接到所述有源区域，其中布置在所述第二插头上并且最靠近所述第二插头的布线电连接到所述第二插头，以及 电连接到第二插头的布线形成双镶嵌结构的一部分。 通过这样的结构，可以提高光到光电转换元件的入射效率。
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公开(公告)号：US07749788B2
公开(公告)日：2010-07-06
申请号：US11840583
申请日：2007-08-17
申请人： Takashi Okagawa , Hiroaki Naruse , Hiroshi Yuzurihara , Shigeru Nishimura , Takeshi Aoki , Yuya Fujino
发明人： Takashi Okagawa , Hiroaki Naruse , Hiroshi Yuzurihara , Shigeru Nishimura , Takeshi Aoki , Yuya Fujino
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L21/76877 , H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14636 , H01L27/14643
摘要： A noise generated by a constitution of widening an incident aperture of light of a photoelectric conversion element is reduced. In a manufacturing method of a photoelectric conversion device, first electroconductor arranged in a first hole arranged in the first interlayer insulation layer electrically connects a first semiconductor region to a gate electrode of an amplifying MOS transistor not through wirings included in a wiring layer. Moreover, a second electroconductor electrically connects a second semiconductor region different from the first semiconductor region to a wiring. In a constitution of that second electroconductor, a third electroconductor arranged in a second hole arranged in the first interlayer insulation layer and a fourth electroconductor arranged in a third hole arranged in the second interlayer insulation layer are stacked and electrically connected to each other. And the step of forming the first electroconductor, and the step of forming the third electroconductor are performed simultaneously.
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公开(公告)号：US07842988B2
公开(公告)日：2010-11-30
申请号：US12784567
申请日：2010-05-21
申请人： Takashi Okagawa , Hiroaki Naruse , Hiroshi Yuzurihara , Shigeru Nishimura , Takeshi Aoki , Yuya Fujino
发明人： Takashi Okagawa , Hiroaki Naruse , Hiroshi Yuzurihara , Shigeru Nishimura , Takeshi Aoki , Yuya Fujino
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L21/76877 , H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14636 , H01L27/14643
摘要： A noise generated by a constitution of widening an incident aperture of light of a photoelectric conversion element is reduced. In a manufacturing method of a photoelectric conversion device, first electroconductor arranged in a first hole arranged in the first interlayer insulation layer electrically connects a first semiconductor region to a gate electrode of an amplifying MOS transistor not through wirings included in a wiring layer. Moreover, a second electroconductor electrically connects a second semiconductor region different from the first semiconductor region to a wiring. In a constitution of that second electroconductor, a third electroconductor arranged in a second hole arranged in the first interlayer insulation layer and a fourth electroconductor arranged in a third hole arranged in the second interlayer insulation layer are stacked and electrically connected to each other. And the step of forming the first electroconductor, and the step of forming the third electroconductor are performed simultaneously.
摘要翻译： 由光电转换元件的光的入射孔径变宽的结构产生的噪声降低。 在光电转换装置的制造方法中，布置在布置在第一层间绝缘层中的第一孔中的第一导电体不是通过布线层中包含的布线将第一半导体区域电连接到放大MOS晶体管的栅电极。 此外，第二电导体将不同于第一半导体区域的第二半导体区域电连接到布线。 在该第二电导体的结构中，布置在布置在第一层间绝缘层中的第二孔中的第三导电体和布置在布置在第二层间绝缘层中的第三孔中的第四导电体彼此堆叠并电连接。 并且同时进行形成第一导电体的步骤和形成第三导电体的步骤。
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公开(公告)号：US20080057615A1
公开(公告)日：2008-03-06
申请号：US11840583
申请日：2007-08-17
申请人： Takashi Okagawa , Hiroaki Naruse , Hiroshi Yuzurihara , Shigeru Nishimura , Takeshi Aoki , Yuya Fujino
发明人： Takashi Okagawa , Hiroaki Naruse , Hiroshi Yuzurihara , Shigeru Nishimura , Takeshi Aoki , Yuya Fujino
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L21/76877 , H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14636 , H01L27/14643
摘要： A noise generated by a constitution of widening an incident aperture of light of a photoelectric conversion element is reduced. In a manufacturing method of a photoelectric conversion device, first electroconductor arranged in a first hole arranged in the first interlayer insulation layer electrically connects a first semiconductor region to a gate electrode of an amplifying MOS transistor not through wirings included in a wiring layer. Moreover, a second electroconductor electrically connects a second semiconductor region different from the first semiconductor region to a wiring. In a constitution of that second electroconductor, a third electroconductor arranged in a second hole arranged in the first interlayer insulation layer and a fourth electroconductor arranged in a third hole arranged in the second interlayer insulation layer are stacked and electrically connected to each other. And the step of forming the first electroconductor, and the step of forming the third electroconductor are performed simultaneously.
摘要翻译： 由光电转换元件的光的入射孔径变宽的结构产生的噪声降低。 在光电转换装置的制造方法中，布置在布置在第一层间绝缘层中的第一孔中的第一导电体不是通过布线层中包含的布线将第一半导体区域电连接到放大MOS晶体管的栅电极。 此外，第二电导体将不同于第一半导体区域的第二半导体区域电连接到布线。 在该第二电导体的结构中，布置在布置在第一层间绝缘层中的第二孔中的第三导电体和布置在布置在第二层间绝缘层中的第三孔中的第四导电体彼此堆叠并电连接。 并且同时进行形成第一导电体的步骤和形成第三导电体的步骤。
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公开(公告)号：US20100230728A1
公开(公告)日：2010-09-16
申请号：US12784567
申请日：2010-05-21
申请人： Takashi Okagawa , Hiroaki Naruse , Hiroshi Yuzurihara , Shigeru Nishimura , Takeshi Aoki , Yuya Fujino
发明人： Takashi Okagawa , Hiroaki Naruse , Hiroshi Yuzurihara , Shigeru Nishimura , Takeshi Aoki , Yuya Fujino
IPC分类号： H01L27/148
CPC分类号： H01L27/14689 , H01L21/76877 , H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14636 , H01L27/14643
摘要： A noise generated by a constitution of widening an incident aperture of light of a photoelectric conversion element is reduced. In a manufacturing method of a photoelectric conversion device, first electroconductor arranged in a first hole arranged in the first interlayer insulation layer electrically connects a first semiconductor region to a gate electrode of an amplifying MOS transistor not through wirings included in a wiring layer. Moreover, a second electroconductor electrically connects a second semiconductor region different from the first semiconductor region to a wiring. In a constitution of that second electroconductor, a third electroconductor arranged in a second hole arranged in the first interlayer insulation layer and a fourth electroconductor arranged in a third hole arranged in the second interlayer insulation layer are stacked and electrically connected to each other. And the step of forming the first electroconductor, and the step of forming the third electroconductor are performed simultaneously.
摘要翻译： 由光电转换元件的光的入射孔径变宽的结构产生的噪声降低。 在光电转换装置的制造方法中，布置在布置在第一层间绝缘层中的第一孔中的第一导电体不是通过布线层中包含的布线将第一半导体区域电连接到放大MOS晶体管的栅电极。 此外，第二电导体将不同于第一半导体区域的第二半导体区域电连接到布线。 在该第二电导体的结构中，布置在布置在第一层间绝缘层中的第二孔中的第三导电体和布置在布置在第二层间绝缘层中的第三孔中的第四导电体彼此堆叠并电连接。 并且同时进行形成第一导电体的步骤和形成第三导电体的步骤。
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公开(公告)号：US08546902B2
公开(公告)日：2013-10-01
申请号：US12779471
申请日：2010-05-13
IPC分类号： H01L27/146
CPC分类号： H01L27/14601 , H01L27/14609 , H04N5/335
摘要： The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region in which the pixel are disposed on the same substrate, comprising: a first semiconductor region of a first conductivity type for forming the photoelectric region, the first semiconductor region being formed in a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type for forming the peripheral circuit, the third and fourth semiconductor regions being formed in the second semiconductor region; wherein in that the impurity concentration of the first semiconductor region is higher than the impurity concentration of the third semiconductor region.
摘要翻译： 本发明涉及一种光电转换装置，其中包括用于将光转换为信号电荷的光电转换装置的像素和包括用于处理信号电荷的电路的外围电路的像素， 相同的衬底，包括：用于形成光电区域的第一导电类型的第一半导体区域，第一半导体区域形成在第二导电类型的第二半导体区域中; 以及第一导电类型的第三半导体区域和用于形成外围电路的第二导电类型的第四半导体区域，第三和第四半导体区域形成在第二半导体区域中; 其中，所述第一半导体区域的杂质浓度高于所述第三半导体区域的杂质浓度。
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10.发明申请Photoelectric conversion device, its manufacturing method, and image pickup device 失效光电转换装置及其制造方法以及摄像装置公开(公告)号：US20060141655A1
公开(公告)日：2006-06-29
申请号：US11318930
申请日：2005-12-28
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L27/14603
摘要： It is an object of the present invention to provide a manufacturing method of a photoelectric conversion device in which no plane channeling is produced even if ions are injected at a certain elevation angle into a semiconductor substrate surface made of silicon. A manufacturing method of a photoelectric conversion device including a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate, wherein the principal plane has an off-angle forming each angle θ with at least two planes perpendicular to a reference (100) plane within a range of 3.5°≦θ≦4.5°, and an ion injecting direction for forming an semiconductor region constituting the photoelectric conversion element forms an angle φ to a direction perpendicular to the principal plane within a range of 0°
摘要翻译： 本发明的目的是提供一种光电转换装置的制造方法，其中即使离子以一定的仰角注入到由硅制成的半导体衬底表面中也不产生平面沟道。 一种在硅衬底的一个主平面上包括硅衬底和光电转换元件的光电转换器件的制造方法，其中主平面具有偏角，每个角度θ与至少两个垂直于基准的平面（100 ）平面，并且用于形成构成光电转换元件的半导体区域的离子注入方向在垂直于主平面的方向上在0°< phi <= 45°，此外，离子注入方向的投影方向与主平面的方向在0°<α<90°的范围内与两个平面方向形成每个角度α。
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