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    Electrical contact spring material made of copper base alloy of high strength and toughness with reduced anisotropy in characteristics
    6.
    发明授权
    Electrical contact spring material made of copper base alloy of high strength and toughness with reduced anisotropy in characteristics 失效
    电接触弹簧材料由铜基合金制成，具有高强度和韧性降低的各向异性特性

    公开(公告)号：US4886641A

    公开(公告)日：1989-12-12

    申请号：US183778

    申请日：1988-04-20

    申请人： Takuro Iwamura ,  Masao Kobayashi

    发明人： Takuro Iwamura ,  Masao Kobayashi

    IPC分类号： H01H1/025 ,  H01R13/03

    CPC分类号： H01H1/025 ,  H01R13/03

    摘要： A novel electrical contact spring material made of a copper base alloy is disclosed. This spring material has high strength and toughness, as well as good adhesion of solder. It also has reduced anisotropy in its characteristics in two directions, i.e., the working direction and the direction perpendicular to it. A very thin-walled member can be produced from this spring material since its anisotropy in characteristics is small and will not increase even if the amount of working is increased.The copper base alloy of which this spring material is made consists essentially of 2.2-5% Ti, 0.1-0.8% Co, 0.02-0.5% Cr, 0-0.6% of Ni and/or Fe, 0-0.5% of at least one of Ca, Mg, Zn, Cd, Li, Zr, Si, Mn, Sn and Al, and the balance being Cu and incidental impurities.

    摘要翻译： 公开了一种由铜基合金制成的新颖的电接触弹簧材料。 该弹簧材料具有高强度和韧性，以及良好的焊接附着力。 它还具有减小其在两个方向上的特性，即工作方向和垂直于它的方向的各向异性。 由于该弹簧材料的各向异性小，即使增加工作量也不会增加，因此可以从该弹簧材料制造非常薄壁的构件。 制造这种弹簧材料的铜基合金基本上由2.2-5％Ti，0.1-0.8％Co，0.02-0.5％Cr，0-0.6％的Ni和/或Fe组成，至少0-0.5％ Ca，Mg，Zn，Cd，Li，Zr，Si，Mn，Sn和Al中的一种，余量为Cu和杂质。

    Semiconductor device having copper alloy leads
    7.
    发明授权
    Semiconductor device having copper alloy leads 失效
    具有铜合金引线的半导体器件

    公开(公告)号：US4872048A

    公开(公告)日：1989-10-03

    申请号：US166217

    申请日：1988-03-10

    申请人： Hidetoshi Akutsu ,  Takuro Iwamura ,  Masao Kobayashi

    发明人： Hidetoshi Akutsu ,  Takuro Iwamura ,  Masao Kobayashi

    IPC分类号： C22C9/00 ,  H01L23/495

    CPC分类号： C22C9/00 ,  H01L23/49579 ,  H01L2924/0002

    摘要： A semiconductor device having leads of high strength and elongation and which consist essentially of a copper alloy that contains 0.05-1% of Cr, 0.005-0.3% of Zr, 0.001-0.05% of Li, 0-1% of Ni, 0-1% of Sn, 0-1% of Ti, 0-0.1% of Si and 0.001-0.3% of at least one element selected from the group consisting of P, Mg, Al, Zn and Mn, with the balance being Cu and no more than 0.1% of incidental impurities, the percent being on a weight basis. The invention also provides a semiconductor device having leads of high strength and elongation and which consist essentially of a copper alloy that contains either 0.05-1% of Cr or 0.005-0.3% of Zr or both, 0.001-0.05% of Li, 0-1% of Ni, 0-1% of Sn, 0-1% of Ti, 0-0.1% of Si and which further contains one or more of 0-2% of a metal selected from the group consisting of Fe, Co and Be, 0-1% of a metal selected from the group consisting of Mg, Al, Zn, Mn, B, P, Y and a rare earth element, and 0-2% of a metal selected from the group consisting of Nb, V, Ta, Hf, Mo and W, the percent being on a weight basis, with the balance being copper and incidental impurities, and which has a structure wherein the average grain size of any eutectic crystal present is no more than 10 .mu.m, the average grain size of any precipitate present is no more than 0.1 .mu.m, and the average size of any crystalline grains present is no more than 50 .mu.m.

    摘要翻译： 具有高强度和伸长率的导线的半导体器件，其基本上由铜合金组成，该铜合金含有0.05-1％的Cr，0.005-0.3％的Zr，0.001-0.05％的Li，0-1％的Ni， 1％Sn，0-1％Ti，0-0.1％Si和0.001-0.3％选自P，Mg，Al，Zn和Mn中的至少一种元素，余量为Cu和 不超过0.1％的偶然杂质，百分比在重量的基础上。 本发明还提供一种具有高强度和伸长率的导线的半导体器件，其基本上由含有0.05-1％的Cr或0.005-0.3％的Zr或两者的铜合金组成，0.001-0.05％的Li， 1％的Ni，0-1％的Sn，0-1％的Ti，0-0.1％的Si，并且还含有一种或多种选自Fe，Co的0-2％的金属和 Be，选自Mg，Al，Zn，Mn，B，P，Y和稀土元素的金属的0-1％，以及0-2％的选自Nb， V，Ta，Hf，Mo和W，百分数在重量的基础上，余量为铜和附带杂质，并且具有其中存在的任何共晶晶体的平均晶粒尺寸不大于10μm的结构， 存在的任何沉淀物的平均晶粒尺寸不大于0.1μm，任何晶粒的平均尺寸不超过50μm。

    Mold member and rapidly solidifying water cooled rotary roll member
    8.
    发明授权
    Mold member and rapidly solidifying water cooled rotary roll member 失效
    模具构件和快速凝固水冷旋转辊构件

    公开(公告)号：US4830086A

    公开(公告)日：1989-05-16

    申请号：US238081

    申请日：1988-08-30

    申请人： Masao Kobayashi ,  Takuro Iwamura ,  Kazuhiko Tabei

    发明人： Masao Kobayashi ,  Takuro Iwamura ,  Kazuhiko Tabei

    IPC分类号： B22D11/059 ,  B22D11/06

    CPC分类号： B22D11/0651 ,  B22D11/059

    摘要： A mold member and a rapidly solidifying water cooled rotary roll member contain 1.3 to 5% of Ni, 0.2 to 2% of Ti, 0.1 to 1.5% of Cr, 0 to 0.5% of Zr, 0 to 1% of Al, 0 to 0.5% of at least one of Fe and Co, 0 to 1.2% of Sn, 0 to 1.2% of Mn, 0 to 1.2% of Zn, 0 to 0.2% of Mg, 0 to 0.2% of P, and 0 to 0.2% of a rare earth element, wherein the remainder of the material has a composition consisting of Cu and unavoidable impurities. Each of the members has superior thermal fatigue resistance and erosion resistance against molten metal, high-temperature strength, high-temperature hardness, high-temperature ductility and heat resistance.

    Copper alloy lead material for use in semiconductor device
    9.
    发明授权
    Copper alloy lead material for use in semiconductor device 失效
    铜合金铅材料用于半导体器件

    公开(公告)号：US4749548A

    公开(公告)日：1988-06-07

    申请号：US903514

    申请日：1986-09-03

    申请人： Hidetoshi Akutsu ,  Takuro Iwamura ,  Masao Kobayashi

    发明人： Hidetoshi Akutsu ,  Takuro Iwamura ,  Masao Kobayashi

    IPC分类号： C22C9/00 ,  H01L23/495 ,  C07C9/00

    CPC分类号： C22C9/00 ,  H01L23/49579 ,  H01L2924/0002

    摘要： Copper alloy lead materials used in the fabrication of semiconductor devices such as ICs and LSIs are required to have a tensile strength of 40 kgf/mm.sup.2 or more, an elongation of 4% or more, an electrical conductivity of 50% IACS or more, and a softening point of 400.degree. C. or higher.The copper alloy lead material of the present invention exhibits even higher degrees of tensile strength and elongation and yet satisfy the values of electrical conductivity and softening point that are required for Cu alloy lead materials to be used with ordinary semiconductor devices. Therefore, the Cu alloy lead material of the present invention is applicable not only to ordinary semiconductor devices but also to those with higher packing densities while displaying equally superior performance.

    摘要翻译： 用于制造半导体器件如IC和LSI的铜合金铅材料需要具有40kgf / mm 2以上的拉伸强度，4％以上的伸长率，IACS以上的导电率为50％以上，以及 软化点在400℃以上。 本发明的铜合金铅材料具有更高的拉伸强度和伸长率，并且还满足与普通半导体器件一起使用的Cu合金铅材料所需的导电性和软化点的值。 因此，本发明的Cu合金铅材料不仅适用于普通的半导体器件，而且也适用于具有较高包装密度的那些，同时具有优异的性能。