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    Measurement of CMOS device channel strain by X-ray diffraction
    1.
    发明授权
    Measurement of CMOS device channel strain by X-ray diffraction 失效
    通过X射线衍射测量CMOS器件通道应变

    公开(公告)号：US08716037B2

    公开(公告)日：2014-05-06

    申请号：US12967323

    申请日：2010-12-14

    申请人： Thomas N. Adam ,  Stephen W. Bedell ,  Eric C. Harley ,  Judson R. Holt ,  Anita Madan ,  Conal E. Murray ,  Teresa L. Pinto

    发明人： Thomas N. Adam ,  Stephen W. Bedell ,  Eric C. Harley ,  Judson R. Holt ,  Anita Madan ,  Conal E. Murray ,  Teresa L. Pinto

    IPC分类号： G01R31/26 ,  H01L21/66

    CPC分类号： H01L29/1054 ,  G01N23/207 ,  G01N2223/607 ,  G01N2223/6116 ,  H01L21/823807 ,  H01L22/12

    摘要： A direct measurement of lattice spacing by X-ray diffraction is performed on a periodic array of unit structures provided on a substrate including semiconductor devices. Each unit structure includes a single crystalline strained material region and at least one stress-generating material region. For example, the single crystalline strained material region may be a structure simulating a channel of a field effect transistor, and the at least one stress-generating material region may be a single crystalline semiconductor region in epitaxial alignment with the single crystalline strained material region. The direct measurement can be performed in-situ at various processing states to provide in-line monitoring of the strain in field effect transistors in actual semiconductor devices.

    摘要翻译： 在包括半导体器件的衬底上提供的单元结构的周期性阵列上进行通过X射线衍射的晶格间距的直接测量。 每个单位结构包括单晶应变材料区域和至少一个应力产生材料区域。 例如，单晶应变材料区域可以是模拟场效应晶体管的沟道的结构，并且所述至少一个应力产生材料区域可以是与单晶应变材料区域外延对准的单晶半导体区域。 可以在各种处理状态下原位执行直接测量，以提供在实际半导体器件中场效应晶体管中的应变的在线监测。

    MEASURING STRAIN OF EPITAXIAL FILMS USING MICRO X-RAY DIFFRACTION FOR IN-LINE METROLOGY
    2.
    发明申请
    MEASURING STRAIN OF EPITAXIAL FILMS USING MICRO X-RAY DIFFRACTION FOR IN-LINE METROLOGY 失效
    使用微型X射线衍射测量外延膜的应变在线计量

    公开(公告)号：US20100208869A1

    公开(公告)日：2010-08-19

    申请号：US12372104

    申请日：2009-02-17

    申请人： Thomas N. Adam ,  Eric C. Harley ,  Anita Madan ,  Teresa L. Pinto

    发明人： Thomas N. Adam ,  Eric C. Harley ,  Anita Madan ,  Teresa L. Pinto

    IPC分类号： G01N23/20 ,  G06F17/00

    CPC分类号： G01N23/20 ,  G01N2223/6116

    摘要： In a method for use of x-ray diffraction to measure the strain on the top silicon germanium layer of an SOI substrate, the location of the peak diffraction area of an upper silicon layer of the SOI substrate is determined by first determining the peak diffraction area of the upper silicon layer on a reference pad (where the SOI thickness is about 700-900 Angstroms) within a die formed on a semiconductor wafer. The x-ray beam then moves to that location on the pad of interest to be measured and begins the XRD scan on the pad of interest to ultimately determine the strain of the top silicon germanium layer of the pad of interest

    摘要翻译： 在使用x射线衍射测量SOI衬底的顶部硅锗层上的应变的方法中，SOI衬底的上硅层的峰值衍射面积的位置是通过首先确定峰值衍射面积 在半导体晶片上形成的晶片内的参考焊盘（其中SOI厚度为约700-900埃）上硅层。 X射线束然后移动到要测量的感兴趣的焊盘上的该位置，并且在感兴趣的焊盘上开始XRD扫描，以最终确定感兴趣焊盘顶部硅锗层的应变

    Measuring strain of epitaxial films using micro x-ray diffraction for in-line metrology
    3.
    发明授权
    Measuring strain of epitaxial films using micro x-ray diffraction for in-line metrology 失效
    使用微X射线衍射测量外延膜的测量应变

    公开(公告)号：US07769134B1

    公开(公告)日：2010-08-03

    申请号：US12372104

    申请日：2009-02-17

    申请人： Thomas N. Adam ,  Eric C. Harley ,  Anita Madan ,  Teresa L. Pinto

    发明人： Thomas N. Adam ,  Eric C. Harley ,  Anita Madan ,  Teresa L. Pinto

    IPC分类号： G01N23/20

    CPC分类号： G01N23/20 ,  G01N2223/6116

    摘要： In a method for use of x-ray diffraction to measure the strain on the top silicon germanium layer of an SOI substrate, the location of the peak diffraction area of an upper silicon layer of the SOI substrate is determined by first determining the peak diffraction area of the upper silicon layer on a reference pad (where the SOI thickness is about 700-900 Angstroms) within a die formed on a semiconductor wafer. The x-ray beam then moves to that location on the pad of interest to be measured and begins the XRD scan on the pad of interest to ultimately determine the strain of the top silicon germanium layer of the pad of interest.

    摘要翻译： 在使用x射线衍射测量SOI衬底的顶部硅锗层上的应变的方法中，SOI衬底的上硅层的峰值衍射面积的位置是通过首先确定峰值衍射面积 在半导体晶片上形成的晶片内的参考焊盘（其中SOI厚度为约700-900埃）上硅层。 然后X射线束移动到要测量的感兴趣的焊盘上的该位置，并在感兴趣的焊盘上开始XRD扫描，以最终确定感兴趣焊盘的顶部硅锗层的应变。