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    METHOD FOR FORMING SILICON OXIDE FILM, PLASMA PROCESSING APPARATUS AND STORAGE MEDIUM
    3.
    发明申请
    METHOD FOR FORMING SILICON OXIDE FILM, PLASMA PROCESSING APPARATUS AND STORAGE MEDIUM 失效
    形成硅氧烷膜，等离子体加工设备和储存介质的方法

    公开(公告)号：US20100093185A1

    公开(公告)日：2010-04-15

    申请号：US12443044

    申请日：2007-09-28

    申请人： Yoshiro Kabe ,  Takashi Kobayashi ,  Toshihiko Shiozawa ,  Junichi Kitagawa

    发明人： Yoshiro Kabe ,  Takashi Kobayashi ,  Toshihiko Shiozawa ,  Junichi Kitagawa

    IPC分类号： H01L21/316 ,  C23C16/513 ,  C23C16/52

    CPC分类号： H01L21/76232 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28211 ,  H01L21/28247 ,  H01L21/31662 ,  H01L21/76224 ,  H01L29/4236 ,  H01L29/66795

    摘要： The present invention provides a method for forming a silicon oxide film, with a substantially uniform film thickness and without being so influenced by dense sites and scattered sites in a pattern provided on an object to be processed, while keeping advantageous points of a plasma oxidation process performed under a lower-pressure and lower-oxygen-concentration condition. In this method, plasma of a processing gas is applied to a surface of the object having a concavo-convex pattern, in a processing chamber of a plasma processing apparatus, so as to oxidize silicon on the surface of the object, thereby forming the silicon oxide film. The plasma is generated under the condition that a ratio of oxygen in the processing gas is within a range of 0.1% to 10% and pressure is within a range of 0.133 Pa to 133.3 Pa. This plasma oxidation process is performed, with a plate, having a plurality of through-holes formed therein, being provided between a region for generating the plasma in the processing chamber and the object to be processed.

    摘要翻译： 本发明提供一种形成氧化硅膜的方法，其具有基本上均匀的膜厚度，并且不受等离子体氧化工艺的优点的保证，在受加工物体上设置的图案中的致密部位和散射部位的影响 在低压和低氧浓度条件下进行。 在该方法中，在等离子体处理装置的处理室中，将处理气体的等离子体施加到具有凹凸图案的物体的表面，以氧化物体表面上的硅，从而形成硅 氧化膜。 在处理气体中的氧的比例在0.1〜10％的范围内且压力在0.133Pa〜133.3Pa的范围内的条件下产生等离子体，用等离子体氧化法， 具有形成在其中的多个通孔，设置在处理室中用于产生等离子体的区域和待处理物体之间。

    Method for forming silicon oxide film, plasma processing apparatus and storage medium
    9.
    发明授权
    Method for forming silicon oxide film, plasma processing apparatus and storage medium 失效
    氧化硅膜形成方法，等离子体处理装置和存储介质

    公开(公告)号：US08003484B2

    公开(公告)日：2011-08-23

    申请号：US12443044

    申请日：2007-09-28

    申请人： Yoshiro Kabe ,  Takashi Kobayashi ,  Toshihiko Shiozawa ,  Junichi Kitagawa

    发明人： Yoshiro Kabe ,  Takashi Kobayashi ,  Toshihiko Shiozawa ,  Junichi Kitagawa

    IPC分类号： H01L21/76

    CPC分类号： H01L21/76232 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28211 ,  H01L21/28247 ,  H01L21/31662 ,  H01L21/76224 ,  H01L29/4236 ,  H01L29/66795

    摘要： The present invention provides a method for forming a silicon oxide film, which has excellent insulating properties and higher quality that can enhance a yield in manufacture of semiconductor devices, while keeping advantageous points in a plasma oxidation process. In this method, plasma is generated under a first process condition that a ratio of oxygen in a processing gas is 1% or less and pressure is within a range of 0.133 to 133 Pa, so as to form the silicon oxide film, by oxidizing silicon on a surface of an object to be processed including silicon as a main component, by using the plasma (first oxidation step). Following the first oxidation step, the plasma is generated under a second process condition that the ratio of oxygen in the processing gas is 20% or more and the pressure is within a range of 400 to 1333 Pa, so as to form an additional silicon oxide film, by further oxidizing the surface of the object to be processed, by using the plasma (second oxidation step).

    摘要翻译： 本发明提供了一种形成氧化硅膜的方法，其具有优异的绝缘性能和更高的质量，可以提高半导体器件制造的成品率，同时保持等离子体氧化工艺中的优点。 在该方法中，在处理气体中的氧比例为1％以下，压力为0.133〜133Pa的范围的第一工序的情况下，生成等离子体，以形成氧化硅膜，氧化硅 通过使用等离子体（第一氧化步骤）在被处理对象物的表面上，以硅为主要成分。 在第一氧化步骤之后，在处理气体中的氧的比例为20％以上且压力为400〜1333Pa的范围的第二工序的条件下生成等离子体，从而形成附加的氧化硅 通过使用等离子体（第二氧化步骤）进一步氧化待处理物体的表面。