公开(公告)号：US20140361864A1

公开(公告)日：2014-12-11

申请号：US14369659

申请日：2013-08-27

Applicant: ULVAC, INC.

Inventor： Natsuki Fukuda ,  Kazunori Fukuju ,  Yutaka Nishioka ,  Koukou Suu

IPC: H01C7/108 ,  C23C14/08 ,  C23C14/00 ,  H01C17/06 ,  H01C17/12

CPC classification number: H01C7/108 ,  C23C14/0036 ,  C23C14/08 ,  H01C17/06 ,  H01C17/12 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

Abstract: To provide a resistance change device that can be protected from an excess current without enlarging a device size. A resistance change device 1 according to the present embodiment includes a lower electrode layer 3, an upper electrode layer 6, a first metal oxide layer 51, a second metal oxide layer 52, and a current limiting layer 4. The first metal oxide layer 51 is disposed between the lower electrode layer 3 and the upper electrode layer 6, and has a first resistivity. The second metal oxide layer 52 is disposed between the first metal oxide layer 51 and the upper electrode layer 6, and has a second resistivity higher than the first resistivity. The current limiting layer 4 is disposed between the lower electrode layer 3 and the first metal oxide layer 51, and has a third resistivity higher than the first resistivity and lower than the second resistivity.

Abstract translation: 提供一种电阻变化器件，可以免受过电流的影响，而不会增大器件尺寸。 根据本实施例的电阻改变装置1包括下电极层3，上电极层6，第一金属氧化物层51，第二金属氧化物层52和限流层4.第一金属氧化物层51 设置在下电极层3和上电极层6之间，并且具有第一电阻率。 第二金属氧化物层52设置在第一金属氧化物层51和上电极层6之间，并且具有比第一电阻率高的第二电阻率。 限流层4设置在下电极层3和第一金属氧化物层51之间，并且具有比第一电阻率高的第三电阻率并且低于第二电阻率。

公开(公告)号：US20170012197A1

公开(公告)日：2017-01-12

申请号：US15120666

申请日：2015-02-13

Applicant: ULVAC, INC.

Inventor： Natsuki Fukuda ,  Kazunori Fukuju ,  Yuusuke Miyaguchi ,  Yutaka Nishioka ,  Koukou Suu

IPC: H01L45/00

CPC classification number: H01L45/146 ,  H01L45/08 ,  H01L45/1253 ,  H01L45/1608 ,  H01L45/1625

Abstract: To provide a low-cost variable-resistance element and a production method therefor. According to an embodiment of the present invention, there is provided a variable-resistance element 1 including a lower electrode layer 3, an upper electrode layer 5, and an oxide semiconductor layer 4. The upper electrode layer 5 is formed of a carbon material. The oxide semiconductor layer 4 includes a first metal oxide layer 41 and a second metal oxide layer 42. The first metal oxide layer 41 is formed between the lower electrode layer 3 and the upper electrode layer 5 and includes a first resistivity. The second metal oxide layer 42 is formed between the first metal oxide layer 41 and the upper electrode layer 5 and includes a second resistivity different from the first resistivity.

Abstract translation: 提供一种低成本可变电阻元件及其制造方法。 根据本发明的实施例，提供了包括下电极层3，上电极层5和氧化物半导体层4的可变电阻元件1.上电极层5由碳材料形成。 氧化物半导体层4包括第一金属氧化物层41和第二金属氧化物层42.第一金属氧化物层41形成在下电极层3和上电极层5之间，并且包括第一电阻率。 第二金属氧化物层42形成在第一金属氧化物层41和上电极层5之间，并且包括不同于第一电阻率的第二电阻率。