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公开(公告)号：US20170268097A1
公开(公告)日：2017-09-21
申请号：US15527754
申请日：2015-06-16
Applicant: ULVAC, INC.
Inventor： Shinya Nakamura , Yoshihiro Ikeda , Yuusuke Miyaguchi , Kazuyoshi Hashimoto , Kengo Tsutsumi , Yoshinori Fujii
CPC classification number: C23C14/3407 , C23C14/081 , H01J37/3491
Abstract: A target assembly is provided in which an abnormal discharging between a projected portion of a backing plate and a side surface of the target is prevented and also in which a bonding material to bond the target and the backing plate can be surely prevented from seeping to the outside and also which is easy in reusing the backing plate. The target assembly according to this invention having: a target made of an insulating material; and a backing plate bonded to one surface of the target via a bonding material, the backing plate having a projected portion which is projected outward beyond an outer peripheral edge of the target, further has an annular insulating plate. The annular insulating plate: encloses a circumference of the target while maintaining a predetermined clearance to a side surface of the target; and covers that surface of the projected portion.
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公开(公告)号：US20170012197A1
公开(公告)日：2017-01-12
申请号：US15120666
申请日：2015-02-13
Applicant: ULVAC, INC.
Inventor： Natsuki Fukuda , Kazunori Fukuju , Yuusuke Miyaguchi , Yutaka Nishioka , Koukou Suu
IPC: H01L45/00
CPC classification number: H01L45/146 , H01L45/08 , H01L45/1253 , H01L45/1608 , H01L45/1625
Abstract: To provide a low-cost variable-resistance element and a production method therefor. According to an embodiment of the present invention, there is provided a variable-resistance element 1 including a lower electrode layer 3, an upper electrode layer 5, and an oxide semiconductor layer 4. The upper electrode layer 5 is formed of a carbon material. The oxide semiconductor layer 4 includes a first metal oxide layer 41 and a second metal oxide layer 42. The first metal oxide layer 41 is formed between the lower electrode layer 3 and the upper electrode layer 5 and includes a first resistivity. The second metal oxide layer 42 is formed between the first metal oxide layer 41 and the upper electrode layer 5 and includes a second resistivity different from the first resistivity.
Abstract translation: 提供一种低成本可变电阻元件及其制造方法。 根据本发明的实施例，提供了包括下电极层3，上电极层5和氧化物半导体层4的可变电阻元件1.上电极层5由碳材料形成。 氧化物半导体层4包括第一金属氧化物层41和第二金属氧化物层42.第一金属氧化物层41形成在下电极层3和上电极层5之间，并且包括第一电阻率。 第二金属氧化物层42形成在第一金属氧化物层41和上电极层5之间，并且包括不同于第一电阻率的第二电阻率。
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公开(公告)号：US20240401224A1
公开(公告)日：2024-12-05
申请号：US18700218
申请日：2022-08-04
Inventor： Junji Tominaga , Noriyuki Miyata , Shutaro Asanuma , Yuusuke Miyaguchi , Kazuya Saito , Takehito Jinbo , Kazumasa Horita , Takeshi Masuda
IPC: C30B1/02 , C23C14/02 , C23C14/06 , C23C14/34 , C23C14/58 , C30B29/46 , C30B29/68 , H10B63/10 , H10N70/00 , H10N70/20
Abstract: Provided is a method of manufacturing a crystallized stacked structural body excellent in manufacturing efficiency. The present invention is characterized by including: a stacked structural body forming step of forming a stacked structural body (7) in which an Sb2Te3 layer (5) having a thickness of from 2 nm to 10 nm and a GeTe layer (6) having a thickness of more than 0 nm and 4 nm or less are stacked, and a trace addition element (S or Se) is incorporated at a content of from 0.05 at % to 10.0 at % into the GeTe layer (6) on an orientation control layer (4) configured to give, to the Sb2Te3 layer (5) and the GeTe layer (6) at the time of their crystallization, a common crystal axis, the step being performed under a temperature of less than 100° C. including room temperature; an Sb2Te3 layer-crystallizing step of crystallizing the Sb2Te3 layer (5) by heating and holding the stacked structural body (7) at a first crystallization temperature of 100° C. or more and less than 170° C.; and a GeTe layer-crystallizing step of crystallizing the GeTe layer (6) by heating and holding the stacked structural body (7) in which the Sb2Te3 layer (5) is crystallized at a second crystallization temperature of 170° C. or more and 400° C. or less.
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公开(公告)号：US09972479B2
公开(公告)日：2018-05-15
申请号：US15329129
申请日：2015-06-18
Applicant: ULVAC, INC.
Inventor： Shinya Nakamura , Yoshihiro Ikeda , Yoshinori Fujii , Yuusuke Miyaguchi
CPC classification number: H01J37/3435 , C23C14/081 , C23C14/3407 , H01J37/3423 , H01J37/3426 , H01J37/3497
Abstract: A target assembly is provided which is capable of preventing abnormal discharging from being generated between a projected portion of a backing plate and a side surface of a target, and which is also capable of surely preventing a bonding material that bonds the target and the backing plate together from seeping to the outside. The backing plate has a projected portion which is projected outward beyond an outer peripheral end of the target, and an annular shield plate is disposed to lie opposite to the projected portion so as to enclose the target in a state in which the target assembly is assembled onto a sputtering apparatus (SM). That portion of the backing plate to which the target gets bonded is defined as a bonding portion, and this bonding portion is protruded relative to the projected portion.
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Patent Agency Ranking
5.发明申请Method for Forming Carbon Electrode Film, Carbon Electrode, and Method for Manufacturing Phase Change Memory Element 审中-公开形成碳电极膜，碳电极的方法和相变存储元件的制造方法公开(公告)号：US20170051396A1
公开(公告)日：2017-02-23
申请号：US15118681
申请日：2015-02-05
Applicant: ULVAC, INC.
Inventor： Yuusuke Miyaguchi , Koukou Suu
CPC classification number: C23C14/35 , C23C14/0605 , C23C14/345 , C23C14/3485 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/16
Abstract: To provide a carbon electrode film forming method by which the surface roughness and the resistivity can be lowered to a predetermined value or less. A carbon electrode film forming method according to an embodiment of the present invention includes maintaining an argon gas atmosphere of 0.3 Pa to 1.2 Pa inclusive inside a chamber. By applying a power supply having a frequency of 20 kHz to 20 MHz inclusive and a power of 0.1 kW to 2 kW inclusive on a carbon target placed in the chamber, the target is sputtered. Carbon particles are deposited on a substrate placed facing the target.
Abstract translation: 为了提供可以使表面粗糙度和电阻率降低到预定值以下的碳电极膜形成方法。 根据本发明实施方案的碳电极膜形成方法包括在室内维持0.3Pa至1.2Pa的氩气气氛。 通过在放置在室中的碳靶上施加具有20kHz至20MHz的频率和0.1kW至2kW的功率的电源，溅射靶。 碳颗粒沉积在面向靶材的基片上。
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公开(公告)号：US20240040788A1
公开(公告)日：2024-02-01
申请号：US18265250
申请日：2021-10-15
Inventor： Noriyuki Miyata , Shutaro Asanuma , Kyoko Sumita , Yuusuke Miyaguchi , Kazuya Saito , Takehito Jinbo , Kazumasa Horita , Takeshi Masuda
Abstract: [PROBLEM] An object of the present invention is to provide a nonvolatile memory device having an excellent information retention characteristic, exhibiting high performance, and achieving practical mass-production, and a manufacturing method therefor.
[SOLUTION] A nonvolatile memory device 1 has a laminated structure part including a plurality of Al2O3 layers 4 and a plurality of SiO2 layers 6 formed as two types of insulating layers formed with different compositions and disposed alternately, and an O-M1-O layer 5 of a 0.5 molecular layer to a 2.0 molecular layer, formed by a chemical bond between a metal element M1 and oxygen, and disposed on each joining interface between the insulating layers, the metal element M1 being an element other than elements constituting the insulating layers, and the nonvolatile memory device stores information by modulating an interface dipole induced in the vicinity of the O-M1-O layer 5 by external electrical stimulation.-
公开(公告)号：US10435783B2
公开(公告)日：2019-10-08
申请号：US15527754
申请日：2015-06-16
Applicant: ULVAC, INC.
Inventor： Shinya Nakamura , Yoshihiro Ikeda , Yuusuke Miyaguchi , Kazuyoshi Hashimoto , Kengo Tsutsumi , Yoshinori Fujii
Abstract: A target assembly is provided in which an abnormal discharging between a projected portion of a backing plate and a side surface of the target is prevented and also in which a bonding material to bond the target and the backing plate can be surely prevented from seeping to the outside and also which is easy in reusing the backing plate. The target assembly according to this invention having: a target made of an insulating material; and a backing plate bonded to one surface of the target via a bonding material, the backing plate having a projected portion which is projected outward beyond an outer peripheral edge of the target, further has an annular insulating plate. The annular insulating plate: encloses a circumference of the target while maintaining a predetermined clearance to a side surface of the target; and covers that surface of the projected portion.
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8.发明申请公开(公告)号：US20180057929A1
公开(公告)日：2018-03-01
申请号：US15555316
申请日：2016-02-16
Applicant: ULVAC, INC.
Inventor： Yuusuke Miyaguchi , Shinya Nakamura , Yoshihiro Ikeda , Koukou Suu
CPC classification number: C23C14/5806 , C23C14/08 , C23C14/081 , C23C14/34 , C23C14/35 , H01J37/3405 , H01L21/02178 , H01L21/02266 , H01L21/02356 , H01L21/32 , H01L27/115
Abstract: There are provided a method of depositing an aluminum oxide film, a method of forming the same, and a sputtering apparatus, which are capable of depositing an aluminum oxide film that can be crystallized at a low-temperature annealing process. In the method of depositing an aluminum oxide film according to this invention, a target made of aluminum oxide and a substrate W to be processed are disposed inside a vacuum chamber, a rare gas is introduced into the vacuum chamber, and HF power is applied to the target to thereby deposit by sputtering the aluminum oxide film on the surface of the substrate, the pressure in the vacuum chamber during film deposition is set to a range of 1.6 through 2.1 Pa.
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公开(公告)号：US20170229296A1
公开(公告)日：2017-08-10
申请号：US15329129
申请日：2015-06-18
Applicant: ULVAC, INC.
Inventor： Shinya Nakamura , Yoshihiro Ikeda , Yoshinori Fujii , Yuusuke Miyaguchi
CPC classification number: H01J37/3435 , C23C14/081 , C23C14/3407 , H01J37/3423 , H01J37/3426 , H01J37/3497
Abstract: A target assembly is provided which is capable of preventing abnormal discharging from being generated between a projected portion of a backing plate and a side surface of a target, and which is also capable of surely preventing a bonding material that bonds the target and the backing plate together from seeping to the outside. The backing plate has a projected portion which is projected outward beyond an outer peripheral end of the target, and an annular shield plate is disposed to lie opposite to the projected portion so as to enclose the target in a state in which the target assembly is assembled onto a sputtering apparatus (SM). That portion of the backing plate to which the target gets bonded is defined as a bonding portion, and this bonding portion is protruded relative to the projected portion.
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