Resistance Change Device, and Method for Producing Same
    1.
    发明申请
    Resistance Change Device, and Method for Producing Same 有权
    电阻变化装置及其制造方法

    公开(公告)号:US20140361864A1

    公开(公告)日:2014-12-11

    申请号:US14369659

    申请日:2013-08-27

    Applicant: ULVAC, INC.

    Abstract: To provide a resistance change device that can be protected from an excess current without enlarging a device size. A resistance change device 1 according to the present embodiment includes a lower electrode layer 3, an upper electrode layer 6, a first metal oxide layer 51, a second metal oxide layer 52, and a current limiting layer 4. The first metal oxide layer 51 is disposed between the lower electrode layer 3 and the upper electrode layer 6, and has a first resistivity. The second metal oxide layer 52 is disposed between the first metal oxide layer 51 and the upper electrode layer 6, and has a second resistivity higher than the first resistivity. The current limiting layer 4 is disposed between the lower electrode layer 3 and the first metal oxide layer 51, and has a third resistivity higher than the first resistivity and lower than the second resistivity.

    Abstract translation: 提供一种电阻变化器件,可以免受过电流的影响,而不会增大器件尺寸。 根据本实施例的电阻改变装置1包括下电极层3,上电极层6,第一金属氧化物层51,第二金属氧化物层52和限流层4.第一金属氧化物层51 设置在下电极层3和上电极层6之间,并且具有第一电阻率。 第二金属氧化物层52设置在第一金属氧化物层51和上电极层6之间,并且具有比第一电阻率高的第二电阻率。 限流层4设置在下电极层3和第一金属氧化物层51之间,并且具有比第一电阻率高的第三电阻率并且低于第二电阻率。

    Variable-Resisance Element and Production Method Therefor
    2.
    发明申请
    Variable-Resisance Element and Production Method Therefor 审中-公开
    可变电阻元件及其制造方法

    公开(公告)号:US20170012197A1

    公开(公告)日:2017-01-12

    申请号:US15120666

    申请日:2015-02-13

    Applicant: ULVAC, INC.

    Abstract: To provide a low-cost variable-resistance element and a production method therefor. According to an embodiment of the present invention, there is provided a variable-resistance element 1 including a lower electrode layer 3, an upper electrode layer 5, and an oxide semiconductor layer 4. The upper electrode layer 5 is formed of a carbon material. The oxide semiconductor layer 4 includes a first metal oxide layer 41 and a second metal oxide layer 42. The first metal oxide layer 41 is formed between the lower electrode layer 3 and the upper electrode layer 5 and includes a first resistivity. The second metal oxide layer 42 is formed between the first metal oxide layer 41 and the upper electrode layer 5 and includes a second resistivity different from the first resistivity.

    Abstract translation: 提供一种低成本可变电阻元件及其制造方法。 根据本发明的实施例,提供了包括下电极层3,上电极层5和氧化物半导体层4的可变电阻元件1.上电极层5由碳材料形成。 氧化物半导体层4包括第一金属氧化物层41和第二金属氧化物层42.第一金属氧化物层41形成在下电极层3和上电极层5之间,并且包括第一电阻率。 第二金属氧化物层42形成在第一金属氧化物层41和上电极层5之间,并且包括不同于第一电阻率的第二电阻率。

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