公开(公告)号：US11488949B1

公开(公告)日：2022-11-01

申请号：US17340119

申请日：2021-06-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kuo-Liang Yeh ,  Jinn-Horng Lai ,  Ching-Wen Hung ,  Chien-Tung Yue ,  Chun-Li Lin

IPC: G06F17/00 ,  H01L27/02 ,  G01R35/00

Abstract: The present invention provides a method of generating dummy patterns and calibration kits, including steps of generating devices-under-test (DUTs) using a point of said chip window layer as reference point in a unit cell, generating calibration kits corresponding to the DUTs using the point as reference point in corresponding unit cells, generating DUT dummy patterns for each DUTs individually in the unit cell, copying the DUT dummy patterns in the unit cell to the corresponding calibration kits in the corresponding unit cells using the point as reference point, and merging all of the unit cell and corresponding unit cells into a final chip layout.

公开(公告)号：US20240264224A1

公开(公告)日：2024-08-08

申请号：US18116272

申请日：2023-03-01

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ching-Wen Hung ,  Jinn-Horng Lai ,  Yan-Zung Wang ,  Peng-Hsiu Chen ,  Su-Ming Hsieh

IPC: G01R31/28 ,  H01L23/485

CPC classification number: G01R31/2886 ,  H01L23/485

Abstract: A ground-signal-ground (GSG) device structure is provided in the present invention, including two signal pads aligned in a first direction and two ground pads respectively at two sides of each signal pad in a second direction, and two transmission lines between the two signal pads and are connected respectively with said two signal pads, and said two transmission lines extend toward each other in the first direction and connect to a device, wherein the two signal pads and the two transmission lines are only in the level of 7th metal layer or above in back-end-of-line (BEOL) metal layers.

公开(公告)号：US20240243073A1

公开(公告)日：2024-07-18

申请号：US18116812

申请日：2023-03-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ching-Wen Hung ,  Jinn-Horng Lai ,  Yan-Zung Wang ,  Peng-Hsiu Chen ,  Su-Ming Hsieh

IPC: H01L23/552 ,  H01L23/522

CPC classification number: H01L23/552 ,  H01L23/5225 ,  H01L2223/66

Abstract: A radio-frequency (RF) device includes a main device on a substrate, a first port extending along a first direction adjacent to a first side of the main device, a second port extending along the first direction adjacent to a second side of the main device, a first shield structure adjacent to a third side of the main device, a second shield structure adjacent to a fourth side of the main device, a first connecting structure extending along a second direction to connect the first port and the main device, and a second connecting structure extending along the second direction to connect the second port and the main device.

公开(公告)号：US20230268440A1

公开(公告)日：2023-08-24

申请号：US17700530

申请日：2022-03-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Po-Yu Yang ,  Fang-Yun Liu ,  Chien-Tung Yue ,  Kuo-Liang Yeh ,  Mu-Kai Tsai ,  Jinn-Horng Lai ,  Cheng-Hsiung Chen

IPC: H01L29/78 ,  H01L27/092 ,  H01L23/58

CPC classification number: H01L29/7845 ,  H01L27/092 ,  H01L23/585

Abstract: A semiconductor device includes a substrate, a first transistor disposed on the substrate, a second transistor in proximity to the first transistor on the substrate, at least one interlayer dielectric layer covering the first transistor and the second transistor, a first stress-inducing dummy metal pattern disposed on the at least one interlayer dielectric layer and directly above the first transistor, and a second stress-inducing dummy metal pattern disposed on the at least one interlayer dielectric layer and directly above the second transistor.