公开(公告)号：US11355695B2

公开(公告)日：2022-06-07

申请号：US16852542

申请日：2020-04-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Ting Wu ,  Yan-Jou Chen ,  Cheng-Tung Huang ,  Jen-Yu Wang ,  Po-Chun Yang ,  Yung-Ching Hsieh ,  Jian-Jhong Chen ,  Bo-Chang Li

IPC: H01L43/02 ,  G11C11/16 ,  H01L27/22 ,  H01L43/10

Abstract: A memory device includes a substrate; an active area extending along a first direction on the substrate; a gate line traversing the active area and extending along a second direction that is not parallel to the first direction; a source doped region in the active area and on a first side of the gate line; a main source line extending along the first direction; a source line extension coupled to the main source line and extending along the second direction; a drain doped region in the active area and on a second side of the gate line that is opposite to the first side; and a data storage element electrically coupled to the drain doped region. The main source line is electrically connected to the source doped region via the source line extension.

公开(公告)号：US20220181324A1

公开(公告)日：2022-06-09

申请号：US17677983

申请日：2022-02-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Wei Tung ,  Jen-Yu Wang ,  Cheng-Tung Huang ,  Yan-Jou Chen

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/66 ,  H01L21/3213 ,  H01L21/762 ,  H01L21/02 ,  H01L29/06 ,  H01L27/02 ,  H01L29/78

Abstract: A semiconductor device includes a PMOS region and a NMOS region on a substrate, a first fin-shaped structure on the PMOS region, a first single diffusion break (SDB) structure in the first fin-shaped structure, a first gate structure on the first SDB structure, and a second gate structure on the first fin-shaped structure. Preferably, the first gate structure and the second gate structure are of different materials and the first gate structure disposed directly on top of the first SDB structure is a polysilicon gate while the second gate structure disposed on the first fin-shaped structure is a metal gate in the PMOS region.

公开(公告)号：US20200035680A1

公开(公告)日：2020-01-30

申请号：US16594054

申请日：2019-10-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Wei Tung ,  Jen-Yu Wang ,  Cheng-Tung Huang ,  Yan-Jou Chen

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/66 ,  H01L21/3213 ,  H01L21/762 ,  H01L21/02 ,  H01L29/06 ,  H01L27/02

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first fin-shaped structure on a substrate; forming a first single diffusion break (SDB) structure in the first fin-shaped structure; forming a first gate structure on the first SDB structure and a second gate structure on the first fin-shaped structure; forming an interlayer dielectric (ILD) layer around the first gate structure and the second gate structure; forming a patterned mask on the first gate structure; and performing a replacement metal gate (RMG) process to transform the second gate structure into a metal gate.

公开(公告)号：US20220020745A1

公开(公告)日：2022-01-20

申请号：US17492687

申请日：2021-10-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Wei Tung ,  Jen-Yu Wang ,  Cheng-Tung Huang ,  Yan-Jou Chen

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/66 ,  H01L21/3213 ,  H01L21/762 ,  H01L21/02 ,  H01L29/06 ,  H01L27/02 ,  H01L29/78

Abstract: A semiconductor device includes a PMOS region and a NMOS region on a substrate, a first fin-shaped structure on the PMOS region, a first single diffusion break (SDB) structure in the first fin-shaped structure, a first gate structure on the first SDB structure, and a second gate structure on the first fin-shaped structure. Preferably, the first gate structure and the second gate structure are of different materials and the first gate structure disposed directly on top of the first SDB structure is a polysilicon gate while the second gate structure disposed on the first fin-shaped structure is a metal gate in the PMOS region.

公开(公告)号：US10483264B2

公开(公告)日：2019-11-19

申请号：US15660970

申请日：2017-07-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Wei Tung ,  Jen-Yu Wang ,  Cheng-Tung Huang ,  Yan-Jou Chen

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L29/49 ,  H01L29/51 ,  H01L29/423 ,  H01L29/165 ,  H01L21/8238 ,  H01L21/3213 ,  H01L21/762 ,  H01L21/02 ,  H01L27/02

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first fin-shaped structure on a substrate; forming a first single diffusion break (SDB) structure in the first fin-shaped structure; forming a first gate structure on the first SDB structure and a second gate structure on the first fin-shaped structure; forming an interlayer dielectric (ILD) layer around the first gate structure and the second gate structure; forming a patterned mask on the first gate structure; and performing a replacement metal gate (RMG) process to transform the second gate structure into a metal gate.

公开(公告)号：US11903325B2

公开(公告)日：2024-02-13

申请号：US17735094

申请日：2022-05-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Ting Wu ,  Yan-Jou Chen ,  Cheng-Tung Huang ,  Jen-Yu Wang ,  Po-Chun Yang ,  Yung-Ching Hsieh ,  Jian-Jhong Chen ,  Bo-Chang Li

IPC: H10N50/80 ,  G11C11/16 ,  H10B61/00 ,  H10N50/85

CPC classification number: H10N50/80 ,  G11C11/161 ,  G11C11/1659 ,  H10B61/22 ,  G11C11/1673 ,  G11C11/1675 ,  H10N50/85

Abstract: A memory device includes a substrate; an active area extending along a first direction on the substrate; a gate line traversing the active area and extending along a second direction that is not parallel to the first direction; a source doped region in the active area and on a first side of the gate line; a main source line extending along the first direction; a source line extension coupled to the main source line and extending along the second direction; a drain doped region in the active area and on a second side of the gate line that is opposite to the first side; and a data storage element electrically coupled to the drain doped region. The main source line is electrically connected to the source doped region via the source line extension.

公开(公告)号：US11637103B2

公开(公告)日：2023-04-25

申请号：US17492687

申请日：2021-10-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Wei Tung ,  Jen-Yu Wang ,  Cheng-Tung Huang ,  Yan-Jou Chen

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/06 ,  H01L27/02 ,  H01L29/78 ,  H01L29/49 ,  H01L29/51 ,  H01L29/423 ,  H01L29/165 ,  H01L21/8238 ,  H01L21/3213 ,  H01L21/762 ,  H01L21/02

Abstract: A semiconductor device includes a PMOS region and a NMOS region on a substrate, a first fin-shaped structure on the PMOS region, a first single diffusion break (SDB) structure in the first fin-shaped structure, a first gate structure on the first SDB structure, and a second gate structure on the first fin-shaped structure. Preferably, the first gate structure and the second gate structure are of different materials and the first gate structure disposed directly on top of the first SDB structure is a polysilicon gate while the second gate structure disposed on the first fin-shaped structure is a metal gate in the PMOS region.

公开(公告)号：US20210313509A1

公开(公告)日：2021-10-07

申请号：US16852542

申请日：2020-04-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Ting Wu ,  Yan-Jou Chen ,  Cheng-Tung Huang ,  Jen-Yu Wang ,  Po-Chun Yang ,  Yung-Ching Hsieh ,  Jian-Jhong Chen ,  Bo-Chang Li

IPC: H01L43/02 ,  H01L27/22 ,  G11C11/16

Abstract: A memory device includes a substrate; an active area extending along a first direction on the substrate; a gate line traversing the active area and extending along a second direction that is not parallel to the first direction; a source doped region in the active area and on a first side of the gate line; a main source line extending along the first direction; a source line extension coupled to the main source line and extending along the second direction; a drain doped region in the active area and on a second side of the gate line that is opposite to the first side; and a data storage element electrically coupled to the drain doped region. The main source line is electrically connected to the source doped region via the source line extension.

公开(公告)号：US20250120094A1

公开(公告)日：2025-04-10

申请号：US18504143

申请日：2023-11-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yan-Jou Chen ,  Chien-Yu Ko ,  Cheng-Tung Huang

IPC: H10B61/00

Abstract: A memory device includes a first memory cell, a second memory cell, a word line, a bit line, a first source line and a second source line. The first memory cell includes a control terminal, a data terminal and a source terminal. The first memory cell includes a control terminal, a data terminal and a source terminal. The word line is coupled to the control terminal of the first memory cell and the control terminal of the second memory cell. The bit line is coupled to the data terminal of the first memory cell and the data terminal of the second memory cell. The first source line is coupled to the source terminal of the first memory cell for receiving a first source voltage. The second source line is coupled to the source terminal of the second memory cell for receiving a second source voltage.

公开(公告)号：US11699705B2

公开(公告)日：2023-07-11

申请号：US17677983

申请日：2022-02-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Wei Tung ,  Jen-Yu Wang ,  Cheng-Tung Huang ,  Yan-Jou Chen

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/06 ,  H01L27/02 ,  H01L29/78 ,  H01L29/49 ,  H01L29/51 ,  H01L29/423 ,  H01L29/165 ,  H01L21/8238 ,  H01L21/3213 ,  H01L21/762 ,  H01L21/02

CPC classification number: H01L27/0924 ,  H01L21/0217 ,  H01L21/32139 ,  H01L21/76224 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/823878 ,  H01L27/0207 ,  H01L27/0922 ,  H01L29/0649 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/165 ,  H01L29/42364 ,  H01L29/42376 ,  H01L29/4916 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/518

Abstract: A semiconductor device includes a PMOS region and a NMOS region on a substrate, a first fin-shaped structure on the PMOS region, a first single diffusion break (SDB) structure in the first fin-shaped structure, a first gate structure on the first SDB structure, and a second gate structure on the first fin-shaped structure. Preferably, the first gate structure and the second gate structure are of different materials and the first gate structure disposed directly on top of the first SDB structure is a polysilicon gate while the second gate structure disposed on the first fin-shaped structure is a metal gate in the PMOS region.