公开(公告)号：US12027555B2

公开(公告)日：2024-07-02

申请号：US17333040

申请日：2021-05-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Cheng-Yu Hsieh

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14649

Abstract: An image sensor includes a semiconductor substrate, a first isolation structure, a visible light detection structure, and an infrared light detection structure. The semiconductor substrate has a first surface and a second surface opposite to the first surface in a vertical direction. The first isolation structure is disposed in the semiconductor substrate for defining pixel regions in the semiconductor substrate. The visible light detection structure and the infrared light detection structure are disposed within the same pixel region, and a first portion of the visible light detection structure is disposed between the second surface of the semiconductor substrate and the infrared light detection structure in the vertical direction.

公开(公告)号：US09484380B1

公开(公告)日：2016-11-01

申请号：US14799596

申请日：2015-07-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Cheng-Yu Hsieh

IPC: H01L27/146 ,  H01L21/324

CPC classification number: H01L27/14685 ,  H01L21/0243 ,  H01L21/324 ,  H01L21/3247 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14698

Abstract: A back side illumination image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of sensing elements formed in the substrate, a plurality of isolation structures isolating each element, and a plurality of cambered surfaces formed on the back side of the substrate. The cambered surfaces are formed correspondingly to the sensing elements, respectively.

Abstract translation: 背面照明图像传感器包括基板，该基板包括前侧和与前侧相反的背面，形成在基板中的多个检测元件，隔离每个元件的多个隔离结构以及形成在 衬底的背面。 弧形表面分别对应于传感元件形成。

公开(公告)号：US12142624B2

公开(公告)日：2024-11-12

申请号：US18380649

申请日：2023-10-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Cheng-Yu Hsieh

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface in a vertical direction, a first isolation structure disposed in the semiconductor substrate for defining pixel regions, a visible light detection structure, an infrared light detection structure, and a reflective layer. The visible light detection structure and the infrared light detection structure are disposed within the same pixel region. The visible light detection structure includes a first portion disposed between the second surface and the infrared light detection structure in the vertical direction and a second portion disposed between the infrared light detection structure and the first isolation structure in a horizontal direction. The infrared light detection structure is disposed between the reflective layer and the first portion in the vertical direction. The second portion is not sandwiched between the reflective layer and the second surface in the vertical direction.

公开(公告)号：US20240047497A1

公开(公告)日：2024-02-08

申请号：US18380649

申请日：2023-10-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Cheng-Yu Hsieh

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14649

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface in a vertical direction, a first isolation structure disposed in the semiconductor substrate for defining pixel regions, a visible light detection structure, an infrared light detection structure, and a reflective layer. The visible light detection structure and the infrared light detection structure are disposed within the same pixel region. The visible light detection structure includes a first portion disposed between the second surface and the infrared light detection structure in the vertical direction and a second portion disposed between the infrared light detection structure and the first isolation structure in a horizontal direction. The infrared light detection structure is disposed between the reflective layer and the first portion in the vertical direction. The second portion is not sandwiched between the reflective layer and the second surface in the vertical direction.

公开(公告)号：US10804418B2

公开(公告)日：2020-10-13

申请号：US16283895

申请日：2019-02-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Guo-Zhong Xing ,  Cheng-Yu Hsieh ,  Chien-En Hsu

IPC: H01L31/0352 ,  H01L31/028 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/103

Abstract: A photodetector includes a substrate, at least one nanowire and a cladding layer. The at least one nanowire is disposed on the substrate and has a semiconductor core. The cladding layer is disposed on sidewalls of the semiconductor core and includes an epitaxial semiconductor film in contact with the sidewalls of the semiconductor core, a metal film disposed on the outside of the epitaxial semiconductor film and a high-k material layer disposed on the outside of metal film.

公开(公告)号：US10535702B1

公开(公告)日：2020-01-14

申请号：US16176581

申请日：2018-10-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Cheng-Yu Hsieh

IPC: H01L27/146

Abstract: An image sensor includes a first photodiode formed in a first substrate. A first deep-trench isolation (DTI) structure is in the first substrate and surrounds the first photodiode. A first inter-dielectric layer having a first circuit structure is formed on the first substrate. A bonding layer is between the first inter-dielectric layer and a second inter-dielectric layer. The second-inter dielectric layer having a second circuit structure is on the bonding layer. A connection wall is disposed in the first inter-dielectric layer, the bonding layer, and the second inter-dielectric layer to physically connect the first circuit structure and the second circuit structure. A second substrate is disposed on the second inter-dielectric layer. A second photodiode is formed in the second substrate. A second DTI structure is in the second substrate and surrounds the second photodiode.

公开(公告)号：US20180358392A1

公开(公告)日：2018-12-13

申请号：US15616904

申请日：2017-06-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Cheng-Yu Hsieh

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14698

Abstract: An image sensor is disclosed. The image sensor includes a substrate having a frontside surface and a backside surface. A plurality of photoelectric transducer elements is disposed on the frontside surface. A dielectric isolation structure extends into the substrate from the frontside surface so as to isolate the plurality of photoelectric transducer elements from one another. A grid structure is disposed on the backside surface. The grid structure has an embedded portion extending into the substrate from the backside surface. The embedded portion of the grid structure is aligned with and in direct contact with the dielectric isolation structure.

公开(公告)号：US20240313020A1

公开(公告)日：2024-09-19

申请号：US18676451

申请日：2024-05-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Cheng-Yu Hsieh

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14649

Abstract: An image sensor includes a semiconductor substrate, a first isolation structure, a visible light detection structure, and an infrared light detection structure. The semiconductor substrate has a first surface and a second surface opposite to the first surface in a vertical direction. The first isolation structure is disposed in the semiconductor substrate for defining pixel regions in the semiconductor substrate. The visible light detection structure and the infrared light detection structure are disposed within the same pixel region, and a first portion of the visible light detection structure is disposed between the second surface of the semiconductor substrate and the infrared light detection structure in the vertical direction. The infrared light detection structure includes an epitaxial structure disposed in the semiconductor substrate, and the visible light detection structure includes a doped region including a material identical to a material of the semiconductor substrate.

公开(公告)号：US10991733B2

公开(公告)日：2021-04-27

申请号：US16595196

申请日：2019-10-07

Applicant: United Microelectronics Corp.

Inventor： Cheng-Yu Hsieh

IPC: H01L27/146

Abstract: An image sensor that includes a substrate is provided. A photodiode is formed in the substrate and in a pixel region. Storage devices are formed in the substrate and adjacent to the photodiode. Deep trench isolation walls penetrate the substrate to isolate the photodiode from the storage devices. A circuit layer is disposed on a first surface of the substrate and connected to the photodiode and the storage devices. A shielding structure is disposed on a second surface of the substrate to shield of the storage devices. A material layer is disposed above the second surface of the substrate. A lens is disposed on the material layer and configured to receive incident light and transmit the incident light to the photodiode.

公开(公告)号：US09608032B2

公开(公告)日：2017-03-28

申请号：US15273660

申请日：2016-09-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Cheng-Yu Hsieh

IPC: H01L21/02 ,  H01L27/146

CPC classification number: H01L27/14685 ,  H01L21/0243 ,  H01L21/324 ,  H01L21/3247 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14698

Abstract: A method for manufacturing a BSI image sensor includes following steps: A substrate is provided. The substrate includes a front side and a back side opposite to the front side. The substrate further includes a plurality of isolation structures and a plurality of sensing elements formed therein. Next, the isolation structures are exposed from the back side of the substrate. Subsequently, a thermal treatment is performed to the back side of the substrate to form a plurality of cambered surfaces on the back side of the substrate. The cambered surfaces are formed correspondingly to the sensing elements, respectively.