公开(公告)号：US10854520B2

公开(公告)日：2020-12-01

申请号：US16416279

申请日：2019-05-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chia-Lin Lu ,  Chun-Lung Chen ,  Kun-Yuan Liao ,  Chun-Hsien Lin ,  Wei-Hao Huang ,  Kai-Teng Cheng

IPC: H01L21/8234 ,  H01L21/321 ,  H01L21/28 ,  H01L21/30 ,  H01L27/092 ,  H01L21/8238

Abstract: The present invention provides a method for forming a semiconductor structure. The method including: Firstly, a substrate is provided, a first region and a second region are defined thereon, next, a gate dielectric layer and a work function metal layer are sequentially formed on the substrate within the first region and within the second region. Afterwards, a dielectric layer is formed on the work function metal layer within the second region, a hydrogen gas treatment is then performed on the substrate, and the work function metal layer is removed within the first region.

公开(公告)号：US10109525B1

公开(公告)日：2018-10-23

申请号：US15820123

申请日：2017-11-21

Applicant: United Microelectronics Corp.

Inventor： Chia-Lin Lu ,  Chun-Lung Chen ,  Kun-Yuan Liao ,  Jiunn-Hsiung Liao ,  Wei-Hao Huang ,  Kai-Teng Cheng

IPC: H01L21/768 ,  H01L23/528 ,  H01L21/311 ,  H01L29/78

Abstract: A method for fabricating a semiconductor device is provided including providing a substrate, on which a plurality of elements is formed. A first inter-dielectric layer is formed over the substrate, covering the elements. A first plug structure is formed in the first inter-dielectric layer, including performing a polishing process over the first inter-dielectric layer to have a dishing on top and extending from a sidewall of the first plug structure. A hard mask layer is formed to fill the dishing. A second inter-dielectric layer is formed over the hard mask layer. A second plug structure is formed in the second inter-dielectric layer to electrically contact the first plug structure, wherein the second plug structure has at least an edge portion extending on the hard mask layer.

公开(公告)号：US20190279909A1

公开(公告)日：2019-09-12

申请号：US16416279

申请日：2019-05-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chia-Lin Lu ,  Chun-Lung Chen ,  Kun-Yuan Liao ,  Chun-Hsien Lin ,  Wei-Hao Huang ,  Kai-Teng Cheng

IPC: H01L21/8234 ,  H01L21/30 ,  H01L21/321 ,  H01L21/28

Abstract: The present invention provides a method for forming a semiconductor structure. The method including: Firstly, a substrate is provided, a first region and a second region are defined thereon, next, a gate dielectric layer and a work function metal layer are sequentially formed on the substrate within the first region and within the second region. Afterwards, a dielectric layer is formed on the work function metal layer within the second region, a hydrogen gas treatment is then performed on the substrate, and the work function metal layer is removed within the first region.

公开(公告)号：US20190252259A1

公开(公告)日：2019-08-15

申请号：US15893672

申请日：2018-02-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chia-Lin Lu ,  Chun-Lung Chen ,  Kun-Yuan Liao ,  Chun-Hsien Lin ,  Wei-Hao Huang ,  Kai-Teng Cheng

IPC: H01L21/8234 ,  H01L21/30 ,  H01L21/28 ,  H01L21/321

CPC classification number: H01L21/82345 ,  H01L21/28088 ,  H01L21/3003 ,  H01L21/3212 ,  H01L21/823462

Abstract: The present invention provides a method for forming a semiconductor structure. The method including: Firstly, a substrate is provided, a first region and a second region are defined thereon, next, a gate dielectric layer and a work function metal layer are sequentially formed on the substrate within the first region and within the second region. Afterwards, a dielectric layer is formed on the work function metal layer within the second region, a hydrogen gas treatment is then performed on the substrate, and the work function metal layer is removed within the first region.