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    METHOD, DIE, AND APPARATUS FOR CRYSTAL GROWTH
    6.
    发明申请
    METHOD, DIE, AND APPARATUS FOR CRYSTAL GROWTH 审中-公开
    方法，DIE和装置用于晶体生长

    公开(公告)号：US20140102358A1

    公开(公告)日：2014-04-17

    申请号：US14041592

    申请日：2013-09-30

    申请人： Jan J. Buzniak ,  Naveen Tiwari ,  Vignesh Rajamani ,  Charles Gasdaska ,  Christopher D. Jones ,  Guilford L. Mack, III ,  Fery Pranadi ,  Maureen DeLoffi ,  Martin Z. Bazant

    发明人： Jan J. Buzniak ,  Naveen Tiwari ,  Vignesh Rajamani ,  Charles Gasdaska ,  Christopher D. Jones ,  Guilford L. Mack, III ,  Fery Pranadi ,  Maureen DeLoffi ,  Martin Z. Bazant

    IPC分类号： C30B15/34

    CPC分类号： C30B15/34 ,  C30B29/20 ,  Y10T117/1044

    摘要： An apparatus, die, and method can be used form a ribbon from a melt, where capillaries are relatively short and spacers are relatively long as compared to a die opening. Such a configuration can cause the melt to flow is a transverse direction that is substantially parallel to the solid/liquid interface to help move impurities to desired locations. In a particular embodiment, a crystal ribbon can be formed where defects, such as microvoids and impurities, are at higher concentrations near outer edges of the crystal ribbon. The outer edges can be removed to produce crystal substrates that are substantially free of microvoids and have no or a relatively low concentration of impurities. In another particular embodiment, the transverse flow can also help to increase the crystal growth rate.

    摘要翻译： 可以使用从熔体形成带状物的设备，模具和方法，其中毛细管相对短并且间隔件与模具开口相比较长。 这种构造可以使熔体流动是基本上平行于固/液界面的横向方向，以帮助将杂质移动到期望的位置。 在特定实施例中，可以形成晶体带，其中诸如微孔和杂质的缺陷在晶带的外边缘附近处于较高浓度。 可以除去外边缘以产生基本上不含微孔并且没有或相对低浓度的杂质的晶体基底。 在另一个具体实施方案中，横向流动还有助于提高晶体生长速率。