CLASSIFYING POLYSILICON
    2.
    发明申请
    CLASSIFYING POLYSILICON 审中-公开
    分类多晶硅

    公开(公告)号:US20160214141A1

    公开(公告)日:2016-07-28

    申请号:US14917677

    申请日:2014-08-07

    Abstract: A method for mechanically classifying polycrystalline silicon chunks or granules with a vibratory screening machine, involves setting silicon chunks or granules present on one or more screens each comprising a screen lining in vibration such that the silicon chunks or silicon granules perform a movement which causes the silicon chunks or silicon granules to be separated into various size classes, wherein a screening index is greater than or equal to 0.6 and less than or equal to 9.0.

    Abstract translation: 一种用振动筛选机对多晶硅块或颗粒进行机械分类的方法,包括设置一个或多个屏幕上存在的硅块或颗粒,每个屏幕均包含振动筛网,使得硅块或硅颗粒进行移动, 块或硅颗粒分离成各种尺寸等级,其中筛选指数大于或等于0.6且小于或等于9.0。

    CHUNK POLYCRYSTALLINE SILICON AND PROCESS FOR CLEANING POLYCRYSTALLINE SILICON CHUNKS
    4.
    发明申请
    CHUNK POLYCRYSTALLINE SILICON AND PROCESS FOR CLEANING POLYCRYSTALLINE SILICON CHUNKS 有权
    CHUNK多晶硅和清洗多晶硅清洗工艺

    公开(公告)号:US20130216466A1

    公开(公告)日:2013-08-22

    申请号:US13772756

    申请日:2013-02-21

    Abstract: The invention provides chunk polycrystalline silicon having a concentration of carbon at the surface of 0.5-35 ppbw. A process for cleaning polycrystalline silicon chunks having carbon contaminations at the surface, includes a thermal treatment of the polycrystalline silicon chunks in a reactor at a temperature of 350 to 600° C., the polycrystalline silicon chunks being present in an inert gas atmosphere during the thermal treatment, and the polycrystalline silicon chunks after the thermal treatment having a concentration of carbon at the surface of 0.5-35 ppbw.

    Abstract translation: 本发明提供了在0.5-35ppbw的表面具有碳浓度的块状多晶硅。 用于清洗表面具有碳污染的多晶硅块的方法包括在350-600℃的温度下对反应器中的多晶硅块进行热处理,多晶硅块存在于惰性气体气氛中 热处理和热处理后的多晶硅块,其表面的碳浓度为0.5-35ppbw。

    METHOD FOR PRODUCING POLYCRYSTALLINE SILICON
    8.
    发明申请
    METHOD FOR PRODUCING POLYCRYSTALLINE SILICON 审中-公开
    生产多晶硅的方法

    公开(公告)号:US20170001868A1

    公开(公告)日:2017-01-05

    申请号:US15113332

    申请日:2015-01-16

    CPC classification number: C01B33/035 C30B15/36

    Abstract: Production of highly pure comminuted polycrystalline silicon from polycrystalline silicon rods produced by the Siemens process is facilitated by removal of graphite residues from the electrode ends of the rods by removing the contaminated end portions by means of mechanical impulses.

    Abstract translation: 通过西门子方法生产的来自多晶硅棒的高纯度粉碎多晶硅的生产通过通过机械冲击去除污染的端部而从棒的电极端部除去石墨残留物而得到促进。

    POLYCRYSTALLINE SILICON
    9.
    发明申请
    POLYCRYSTALLINE SILICON 有权
    多晶硅

    公开(公告)号:US20130309524A1

    公开(公告)日:2013-11-21

    申请号:US13893855

    申请日:2013-05-14

    Abstract: Polycrystalline silicon in the form of chunks packed in plastic bags containing a mass of at least 5 kg, including chunks of size from 20 to 200 mm, wherein any fines fraction in the plastic bag is less than 900 ppmw, preferably less than 300 ppmw, more preferably less than 10 ppmw. The polycrystalline silicon, after comminution of a silicon rod obtained by CVD (Siemens process), is sorted and classified, optionally dedusted and then metered and packed. Metering and packing units include elements for removing fines or small particles during metering and during packing. The packing unit includes an energy absorber or a reservoir vessel which enables sliding or slipping of the silicon chunks into the plastic bag. Gas flow generated within the plastic bag after the bag has been filled transports the dust or small particles out of the bag, and these are sucked out with a suction device.

    Abstract translation: 块状形式的多晶硅包装在包含至少5kg的质量的塑料袋中,包括尺寸为20至200mm的块,其中塑料袋中的任何细小分数小于900ppmw,优选小于300ppmw, 更优选小于10ppmw。 在通过CVD(西门子方法)获得的硅棒粉碎后,多晶硅被分类和分类,可选地除尘,然后计量和包装。 计量和包装单元包括在计量和包装过程中除去细粉或小颗粒的元素。 包装单元包括能够将硅块滑动或滑动到塑料袋中的能量吸收器或储存容器。 在袋子填充之后,在塑料袋内产生的气流将灰尘或小颗粒从袋中输送,并且用抽吸装置将其吸出。

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