公开(公告)号：US09275963B2

公开(公告)日：2016-03-01

申请号：US14199640

申请日：2014-03-06

Applicant: XINTEC INC.

Inventor： Yung-Tai Tsai ,  Shu-Ming Chang ,  Chun-Wei Chang ,  Chien-Hui Chen ,  Tsang-Yu Liu ,  Yen-Shih Ho

IPC: H01L23/00 ,  H01L23/31 ,  H01L21/78

CPC classification number: H01L24/05 ,  H01L21/78 ,  H01L23/3185 ,  H01L23/3192 ,  H01L24/03 ,  H01L2224/02371 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/05624 ,  H01L2224/94 ,  H01L2924/10156 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2924/00014

Abstract: A semiconductor structure includes a wafer, at least one nonmetal oxide layer, a pad, a passivation layer, an isolation layer, and a conductive layer. The wafer has a first surface, a second surface, a third surface, a first stage difference surface connected between the second and third surfaces, and a second stage difference surface connected between the first and third surfaces. The nonmetal oxide layer is located on the first surface of the wafer. The pad is located on the nonmetal oxide layer and electrically connected to the wafer. The passivation layer is located on the nonmetal oxide layer. The isolation layer is located on the passivation layer, nonmetal oxide layer, the first, second and third surfaces of the wafer, and the first and second stage difference surfaces of the wafer. The conductive layer is located on the isolation layer and electrically contacts the pad.

Abstract translation: 半导体结构包括晶片，至少一个非金属氧化物层，焊盘，钝化层，隔离层和导电层。 晶片具有连接在第二和第三表面之间的第一表面，第二表面，第三表面，第一阶段差异表面以及连接在第一和第三表面之间的第二阶段差异表面。 非金属氧化物层位于晶片的第一表面上。 垫位于非金属氧化物层上并电连接到晶片。 钝化层位于非金属氧化物层上。 隔离层位于钝化层，非金属氧化物层，晶片的第一，第二和第三表面以及晶片的第一和第二级差分表面上。 导电层位于隔离层上并电接触焊盘。

公开(公告)号：US09419050B2

公开(公告)日：2016-08-16

申请号：US14703796

申请日：2015-05-04

Applicant: XINTEC INC.

Inventor： Yen-Shih Ho ,  Shu-Ming Chang ,  Yung-Tai Tsai ,  Tsang-Yu Liu

IPC: H01L27/146 ,  H01L21/683 ,  H01L21/67 ,  H01L31/18

CPC classification number: H01L27/14687 ,  H01L21/67092 ,  H01L21/6836 ,  H01L27/14685 ,  H01L31/18

Abstract: A manufacturing method of a semiconductor structure includes the following steps. A temporary bonding layer is used to adhere a carrier to a first surface of a wafer. A second surface of the wafer is adhered to an ultraviolet tape on a frame, and the temporary bonding layer and the carrier are removed. A protection tape is adhered to the first surface of the wafer. An ultraviolet light is used to irradiate the ultraviolet tape. A dicing tape is adhered to the protection tape and the frame, and the ultraviolet tape is removed. A first cutter is used to dice the wafer from the second surface of the wafer, such that plural chips and plural gaps between the chips are formed. A second cutter with a width smaller than the width of the first cutter is used to cut the protection tape along the gaps.

Abstract translation: 半导体结构的制造方法包括以下步骤。 临时粘合层用于将载体粘附到晶片的第一表面。 将晶片的第二表面粘附到框架上的紫外线带上，并且移除临时粘合层和载体。 保护带粘附到晶片的第一表面。 使用紫外线照射紫外线带。 切割胶带粘附到保护带和框架上，并且除去紫外线带。 使用第一切割器从晶片的第二表面切割晶片，从而形成芯片之间的多个芯片和多个间隙。 使用宽度小于第一切割器的宽度的第二切割器沿着间隙切割保护带。