公开(公告)号：US20030231683A1

公开(公告)日：2003-12-18

申请号：US10159930

申请日：2002-05-30

Applicant: Xerox Corporation

Inventor： Christopher L. Chua ,  Michael A. Kneissl ,  David P. Bour

IPC: H01S005/00

CPC classification number: B82Y20/00 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/3095 ,  H01S5/34333 ,  H01S5/423 ,  H01S2301/176

Abstract: A nitride based resonant cavity semiconductor structure has highly reflective mirrors on opposite sides of the active layer. These highly reflective mirrors can be distributed Bragg reflectors or metal terminated layer stacks of dielectric materials. The nitride based resonant cavity semiconductor structure can be vertical cavity surface emitting laser (VCSEL), a light emitting diode (LED), or a photodetector (PD), or a combination of these devices.

Abstract translation: 基于氮化物的谐振腔半导体结构在有源层的相对侧上具有高反射镜。 这些高反射镜可以是分布式布拉格反射器或介电材料的金属端接层堆叠。 基于氮化物的谐振腔半导体结构可以是垂直腔表面发射激光器（VCSEL），发光二极管（LED）或光电检测器（PD）或这些器件的组合。

公开(公告)号：US20020094003A1

公开(公告)日：2002-07-18

申请号：US10025462

申请日：2001-12-26

Applicant: Xerox Corporation

Inventor： David P. Bour ,  Michael A. Kneissl ,  Linda T. Romano

IPC: H01S005/00

CPC classification number: H01S5/32341 ,  H01S5/2004 ,  H01S5/2275 ,  H01S2301/18 ,  H01S2304/00

Abstract: An index-guided buried heterostructure AlGaInN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures.

Abstract translation: 与常规脊波导结构相比，折射率引导掩埋异质结AlGaInN激光二极管提供了改进的模式稳定性和低阈值电流。 短周期超晶格用于允许足够的包层厚度进行约束而不会开裂。 与常规结构相比，由于泄漏而损失的光的强度降低了约2个数量级，伴随着远场辐射图的改进。

公开(公告)号：US20020054745A1

公开(公告)日：2002-05-09

申请号：US09998335

申请日：2001-12-03

Applicant: Xerox Corporation

Inventor： Christian G. Van de Walle ,  David P. Bour ,  Michael A. Kneissl ,  Linda T. Romano

IPC: G02B006/10 ,  H01L033/00

CPC classification number: B82Y20/00 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/34333 ,  H01S2301/18

Abstract: A structure and method for an asymmetric waveguide nitride laser diode without need of a p-type waveguide is disclosed. The need for a high aluminum tunnel barrier layer in the laser is avoided.

Abstract translation: 公开了一种不需要p型波导的不对称波导氮化物激光二极管的结构和方法。 避免了在激光器中需要高的铝隧道阻挡层。

公开(公告)号：US20040184496A1

公开(公告)日：2004-09-23

申请号：US10394559

申请日：2003-03-20

Applicant: Xerox Corporation

Inventor： Michael A. Kneissl ,  David P. Bour ,  Linda T. Romano ,  Christian G. Van de Walle

IPC: H01S005/00

CPC classification number: B82Y20/00 ,  H01S5/0213 ,  H01S5/2009 ,  H01S5/2205 ,  H01S5/2231 ,  H01S5/3213 ,  H01S5/34333

Abstract: A nitride-based laser diode structure utilizing a single GaN:Mg waveguide/cladding layer, in place of separate GaN:Mg waveguide and AlGaN:Mg cladding layers used in conventional nitride-based laser diode structures. When formed using an optimal thickness, the GaN:Mg layer produces an optical confinement that is comparable to or better than conventional structures. A thin AlGaN tunnel barrier layer is provided between the multiple quantum well and a lower portion of the GaN:Mg waveguide layer, which suppresses electron leakage without any significant decrease in optical confinement. A split-metal electrode is formed on the GaN:Mg upper waveguide structure to avoid absorption losses in the upper electrode metal. A pair of AlGaN:Si current blocking layer sections are located below the split-metal electrode sections, and separated by a gap located over the active region of the multiple quantum well.

Abstract translation: 使用单个GaN：Mg波导/包覆层的氮化物基激光二极管结构代替用于常规氮化物基激光二极管结构中的单独的GaN：Mg波导和AlGaN：Mg包覆层。 当使用最佳厚度形成时，GaN：Mg层产生与传统结构相当或更好的光学约束。 在多量子阱和GaN：Mg波导层的下部之间提供薄的AlGaN隧道势垒层，其抑制电子泄漏，而不会明显减少光学限制。 在GaN：Mg上部波导结构上形成裂缝金属电极，以避免上部电极金属中的吸收损失。 一对AlGaN：Si电流阻挡层部分位于裂缝金属电极部分下方，并被位于多量子阱的有源区上方的间隙分开。

公开(公告)号：US20030118066A1

公开(公告)日：2003-06-26

申请号：US10024239

申请日：2001-12-21

Applicant: Xerox Corporation

Inventor： David P. Bour ,  Michael A. Kneissl

IPC: H01S005/00

CPC classification number: B82Y20/00 ,  H01S5/0421 ,  H01S5/321 ,  H01S5/34333

Abstract: Graded semiconductor layers between GaN and AlGaN layers in a nitride based semiconductor laser structure reduce the threshold voltage of the laser structure by reducing the electric potential barrier at the interface between the GaN and AlGaN layers. The graded layers can be step graded, continuous graded or digital graded.