摘要:
The movement of an image component is determined using the plot information, such as the position, size of the image component, etc., at each time. The complex movement of each image component can be easily generated by providing a plurality of plot information generating units for each image component and combining a plurality of pieces of plot information generated by the plot information generating units when an image is reproduced.
摘要:
The movement of an image component is determined using the plot information, such as the position, size of the image component, etc., at each time. The complex movement of each image component can be easily generated by providing a plurality of plot information generating units for each image component and combining a plurality of pieces of plot information generated by the plot information generating units when an image is reproduced.
摘要:
The movement of an image component is determined using the plot information, such as the position, size of the image component, etc., at each time. The complex movement of each image component can be easily generated by providing a plurality of plot information generating units for each image component and combining a plurality of pieces of plot information generated by the plot information generating units when an image is reproduced.
摘要:
The movement of an image component is determined using the plot information, such as the position, size of the image component, etc., at each time. The complex movement of each image component can be easily generated by providing a plurality of plot information generating units for each image component and combining a plurality of pieces of plot information generated by the plot information generating units when an image is reproduced.
摘要:
A device executes a program including a process stored in a storage device. The process includes obtaining possessed product information of a possessed product of a user, and usage status information which indicates usage of the possessed product, the process product information being based on a request from the user device, obtaining first product information corresponding to the obtained possessed product information and a second product information of a comparison target product, the first product information and the second product information including a content of the possessed product and the comparison target described in a plurality of items, respectively, extracting a prescribed item from among the items of the first product information and second product information based on the obtained usage status information, and transmitting the content based on the content of the first product information and second product information corresponding to the extracted item to the user device.
摘要:
A storage section, at least one writing section, and at least one reading section are provided on a substrate. A storage-section substrate region in which the storage section is formed, at least one writing-section substrate region in which each writing section is formed, at least one reading-section substrate region in which each reading section is formed are insulatedly isolated from each other on the substrate. Independent substrate potentials are applied to each substrate region.
摘要:
A nonvolatile resistance variable memory device (100) includes memory cells (M11, M12, . . . ) in each of which a variable resistance element (R11, R12, . . . ) including a variable resistance layer placed between and in contact with a first electrode and a second electrode, and a current steering element (D11, D12, . . . ) including a current steering layer placed between and in contact with a third electrode and a fourth electrode, are connected in series, and the device is driven by a first LR drive circuit (105a1) via a current limit circuit (105b) to decrease resistance of the variable resistance element while the device is driven by a second HR drive circuit (105a2) to increase resistance of the variable resistance element, thus using the current limit circuit (105b) to make a current for decreasing resistance of the variable resistance element lower than a current for increasing resistance of the variable resistance element.
摘要:
A nonvolatile resistance variable memory device (100) includes memory cells (M11, M12, . . . ) in each of which a variable resistance element (R11, R12, . . . ) including a variable resistance layer placed between and in contact with a first electrode and a second electrode, and a current steering element (D11, D12, . . . ) including a current steering layer placed between and in contact with a third electrode and a fourth electrode, are connected in series, and the device is driven by a first LR drive circuit (105a1) via a current limit circuit (105b) to decrease resistance of the variable resistance element while the device is driven by a second HR drive circuit (105a2) to increase resistance of the variable resistance element, thus using the current limit circuit (105b) to make a current for decreasing resistance of the variable resistance element lower than a current for increasing resistance of the variable resistance element.
摘要:
The memory circuit comprises: a single or a plurality of reading-out port(s); a single or a plurality of writing port(s); a crosstalk-glitch suppressor circuit for suppressing crosstalk glitch between internal signal lines of each of the ports; and a control device for controlling capacity of the crosstalk-glitch suppressor circuit.
摘要:
There is provided a memory circuit including a first memory cell mapped on an address space accessible from a processor, and a second memory cell not mapped on the address space and having the same constitution as that of the first memory cell, wherein a control circuit for executing a control function relating to the memory circuit is included, and an output signal line of the second memory cell is connected to the control circuit.