摘要:
Disclosed are an optically active, ethylenically unsaturated monomer represented by the following structural formula: ##STR1## wherein: A stands for S, SO or SO.sub.2 ; X and Y each stand for a hydrogen atom or a substituent selected from the group consisting of alkyl groups and acyl groups; Z stands for a substituent selected from the group consisting of alkoxy, alkylamino, hydroxyl and silyloxy groups; and X and Y can be bonded together to form a ring with the nitrogen atom to which they are bonded or X and Y can be a single group bonded to said nitrogen atom through a double bond, with the proviso that at least one of X and Z is an alkenyl equivalent to said group, and polymers of this monomer. One typical instance of the monomer is benzyl 6-acrylaminopenicillanate.
摘要:
A vehicle seat may include a seat cushion that includes a central portion, first and second side support portions, and a vertical moving mechanism. The first and second side support portions are capable of laterally supporting femoral portions of a passenger. The vertical moving mechanism is capable of vertically moving the first and second side support portions in synchronism with each other, so as to change heights of the first and second side support portions relative to the central portion. The vertical moving mechanism is arranged and constructed to vertically move each of the first and second side support portions within a use range thereof in which each of the first and second side support portions has side support function. The vertical moving mechanism is arranged and constructed to further vertically move the second side support portion downwardly beyond the use range to a release position in which the second side support portion does not have the side support function.
摘要:
Disclosed is a novel novolak resin comprising structural units having a trimethylsilyl group. A resist material highly resistive to dry etching is obtained by adding a photosensitive diazo compound to this novolak resin. The resist material is useful in various lithography methods to form a positive resist pattern. This resist material is used in a pattern forming method of a two-layer type, in which a fine pattern is formed in a thin film of the resist material by lithography and then transferred into an underlying thick organic polymer layer by dry etching of the underlying layer with the resist pattern as mask. Curing of the resist pattern by irradiation with deep UV rays is effective for further improvement in the precision of the transferred pattern.