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1.发明授权Silicon-containing novolak resin and resist material and pattern forming method using same 失效含硅酚醛清漆树脂及其抗蚀剂材料及图案形成方法
公开(公告)号：US4624909A
公开(公告)日：1986-11-25
申请号：US724457
申请日：1985-04-18
CPC分类号： C07F7/0818 , C08G8/04 , C08G8/28 , C08L61/14 , G03F7/0757 , Y10S430/106
摘要： Disclosed is a novel novolak resin comprising structural units having a trimethylsilyl group. A resist material highly resistive to dry etching is obtained by adding a photosensitive diazo compound to this novolak resin. The resist material is useful in various lithography methods to form a positive resist pattern. This resist material is used in a pattern forming method of a two-layer type, in which a fine pattern is formed in a thin film of the resist material by lithography and then transferred into an underlying thick organic polymer layer by dry etching of the underlying layer with the resist pattern as mask. Curing of the resist pattern by irradiation with deep UV rays is effective for further improvement in the precision of the transferred pattern.
摘要翻译： 公开了包含具有三甲基甲硅烷基的结构单元的新型酚醛清漆树脂。 通过向该酚醛清漆树脂中加入感光性重氮化合物，可获得高耐干蚀刻性的抗蚀剂材料。 抗蚀剂材料可用于各种光刻方法以形成正的抗蚀剂图案。 该抗蚀剂材料以两层型的图案形成方法使用，其中通过光刻在抗蚀剂材料的薄膜中形成精细图案，然后通过干法蚀刻底层的方法将其转移到下面的厚的有机聚合物层中 层，抗蚀图案作为掩模。 通过深紫外线照射固化抗蚀剂图案对于进一步提高转印图案的精度是有效的。
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2.发明授权Negative resist and radical scavenger composition with capability of preventing post-irradiation polymerization 失效具有防止后照射聚合的能力的负抗蚀剂和自由基清除剂组合物
公开(公告)号：US4279986A
公开(公告)日：1981-07-21
申请号：US59845
申请日：1979-07-23
申请人： Yoshitake Ohnishi , Masaki Itoh , Kenji Mizuno , Hiroshi Gokan
发明人： Yoshitake Ohnishi , Masaki Itoh , Kenji Mizuno , Hiroshi Gokan
CPC分类号： G03F7/038 , Y10S430/118
摘要： A lithographic resist for use in microfabrication comprising a negative-type resist containing a radical scavenger capable of preventing post-irradiation reaction.
摘要翻译： 一种用于微细加工的平版印刷抗蚀剂，包括含有能够防止后照射反应的自由基清除剂的负型抗蚀剂。
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3.发明授权Pattern forming and etching process using radiation sensitive negative resist 失效图案形成和蚀刻工艺使用辐射敏感负性抗蚀剂
公开(公告)号：US4592993A
公开(公告)日：1986-06-03
申请号：US787695
申请日：1985-10-15
申请人： Yoshitake Ohnishi , Takeshi Endo
发明人： Yoshitake Ohnishi , Takeshi Endo
CPC分类号： G03F7/038
摘要： A process for fabrication of resist comprising a substrate and an overlying radiation sensitive layer, said overlying layer consisting essentially of a specific polymer or copolymer of vinylnaphthalene.
摘要翻译： 一种用于制造抗蚀剂的方法，包括基底和上覆的辐射敏感层，所述上覆层基本上由乙烯基萘的特定聚合物或共聚物组成。
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公开(公告)号：US06180531B2
公开(公告)日：2001-01-30
申请号：US09231493
申请日：1999-01-14
IPC分类号： H01L21302
CPC分类号： H01L21/76831 , H01L21/0212 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/31144 , H01L21/3127 , H01L21/76801 , H01L21/76802
摘要： A semiconductor device, in which wiring layers are electrically isolated from each other by an insulating film which includes an amorphous carbon fluoride film insulating film containing carbon and fluorine as main components and the wiring layers are electrically connected to each other by a conductive material buried in a hole penetrating through the insulating film, is manufactured by selectively etching the amorphous carbon fluoride film. Moreover, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed on both of the amorphous carbon fluoride film and a side surface of said hole, or one of the amorphous carbon fluoride film and the side surface thereof.
摘要翻译： 一种半导体器件，其中布线层通过绝缘膜彼此电绝缘，所述绝缘膜包括以碳和氟为主要成分的无定形氟化碳膜绝缘膜，并且所述布线层通过埋入的导电材料彼此电连接 通过选择性地蚀刻无定形氟化碳膜来制造穿透绝缘膜的孔。 此外，在无定形氟化碳膜和所述孔的侧表面或无定形氟化碳膜及其侧表面之一上形成氧化硅膜，氮化硅膜或氮氧化硅膜。
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公开(公告)号：US3979320A
公开(公告)日：1976-09-07
申请号：US507130
申请日：1974-09-18
CPC分类号： C09K19/56
摘要： A liquid crystal composition having a homogeneous alignment of the liquid crystalline molecules, comprises a liquid crystal material, for example, nematic, smectic and cholesteric liquid crystal substances, an additive effective for forming the homogeneous alignment, said additive consisting of at least one heterocyclic compound having a five or six-membered heterocyclic ring containing therein at least one atomic group selected from the class consisting of the atomic group of the formulae; ##EQU1## wherein X is a hydrogen atom or substituted or unsubstituted phenyl radical, and at least one atomic group of the formula: ##EQU2## Y, wherein Y represents an oxygen or sulfur atom, said heterocyclic compounds being different from indigo, and, if necessary, a supplementary additive effective for enhancing the dynamic scattering property of the liquid crystal material, said supplementary additive consisting of at least one substance selected from the class consisting ofA. mixtures of a quinone compound and a compound in which oxo groups of the quinone compound are substituted by hydroxyl groups.B. organic cyclic compounds having either a hydroxyl or amino group, or both, and either a carbonyl or imino group, or both, andC. mixtures of one or more of the organic cyclic compounds as defined in the above Item (b) and at least one compound selected from the group consisting of the quinone and substituted quinone compounds as defined in the above Item (a).
摘要翻译： 具有液晶分子均匀排列的液晶组合物包括液晶材料，例如向列型，近晶色和胆甾型液晶物质，有效形成均匀取向的添加剂，所述添加剂由至少一种杂环化合物 其中含有至少一个选自由式的原子团组成的类别的原子团的五元或六元杂环; | -NX其中X是氢原子或取代或未取代的苯基，以及至少一个下式的原子团：| -C = Y，Y，其中Y表示氧或硫原子，所述杂环化合物不同于靛蓝 ，并且如果需要，可以增加有效提高液晶材料的动态散射性质的补充添加剂，所述补充添加剂由选自以下的一种物质组成：复合化合物的混合物和化合物的混合物 喹啉化合物组由羟基组合取代。
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公开(公告)号：US5866920A
公开(公告)日：1999-02-02
申请号：US813338
申请日：1997-03-07
IPC分类号： G03F7/075 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/311 , H01L21/312 , H01L21/314 , H01L21/768 , H01L23/522 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76831 , H01L21/31144 , H01L21/76801 , H01L21/76802 , H01L21/3127
摘要： A semiconductor device, in which wiring layers are electrically isolated from each other by an insulating film which includes an amorphous carbon fluoride film insulating film containing carbon and fluorine as main components and the wiring layers are electrically connected to each other by a conductive material buried in a hole penetrating through the insulating film, is manufactured by selectively etching the amorphous carbon fluoride film. Moreover, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed on both of the amorphous carbon fluoride film and a side surface of said hole, or one of the amorphous carbon fluoride film and the side surface thereof.
摘要翻译： 一种半导体器件，其中布线层通过绝缘膜彼此电绝缘，所述绝缘膜包括以碳和氟为主要成分的无定形氟化碳膜绝缘膜，并且所述布线层通过埋入的导电材料彼此电连接 通过选择性地蚀刻无定形氟化碳膜来制造穿透绝缘膜的孔。 此外，在无定形氟化碳膜和所述孔的侧表面或无定形氟化碳膜及其侧表面之一上形成氧化硅膜，氮化硅膜或氮氧化硅膜。
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7.发明授权Ultrafine pattern forming method and ultrafine etching method using calixarene derivative as negative resist 失效使用杯芳烃衍生物作为负性抗蚀剂的超细图案形成方法和超细蚀刻方法
公开(公告)号：US5702620A
公开(公告)日：1997-12-30
申请号：US693672
申请日：1996-08-13
申请人： Yoshitake Ohnishi , Jun-Ichi Fujita , Arturo Arduini , Alessandro Casnati , Andrea Pochini , Rocco Ungaro
发明人： Yoshitake Ohnishi , Jun-Ichi Fujita , Arturo Arduini , Alessandro Casnati , Andrea Pochini , Rocco Ungaro
IPC分类号： C09D165/00 , C23F1/00 , C23F1/02 , G03F7/004 , G03F7/038 , H01L21/027 , H01L21/302
CPC分类号： G03F7/004 , C23F1/02 , G03F7/038 , H01L21/0277 , Y10S430/143 , Y10S430/168
摘要： A resist film consisting of 5,11,17,23,29,35-hexachloromethyl-37, 38,39,40,41,42-hexamethoxycalix�6!arene sensitive to a high-energy beam and soluble to a solvent is formed on a substrate etchable by a dry etching, has a selective region thereof exposed to the high-energy beam, with a remaining region unexposed thereto, and developed to define a pattern on the substrate, as the remaining region is removed by the solvent, before the substrate with the pattern is subjected to the dry etching. A nanometric patterning and etching is permitted, with a reduced process time.
摘要翻译： 形成由5,11,17,23,29,35-六氯甲基-37,38,39,40,41,42-六甲氧基钙[6]组成的抗蚀膜，其对高能束敏感并且可溶于溶剂 在可通过干蚀刻蚀刻的基板上，具有暴露于高能束的选择区域，其余区域未曝光，并显影以在剩余区域被溶剂除去之后在衬底上限定图案，之前 对具有图案的基板进行干蚀刻。 允许进行纳米图案化和蚀刻，缩短处理时间。
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公开(公告)号：US3975285A
公开(公告)日：1976-08-17
申请号：US411297
申请日：1973-10-30
摘要： A liquid crystal composition having long-life dynamic light scattering properties under application of DC or AC voltage, comprising (1) at least one liquid crystalline substance selected from the group consisting of nematic and cholesteric, and (2) at least one additive selected from the group consisting of (A) mixtures of at least one first organic cyclic compound selected from the group consisting of quinone compounds, quinoneimine compounds, imino compounds, desoxybenzoin compounds, dibenzyl methane compounds and triphenyl methane compounds, with at least one second organic cyclic compound selected from the group consisting of hydroquinone compounds, aromatic amino compounds, heterocyclic amino compounds and alicyclic amino compounds, and (B) aromatic, heterocyclic and alicyclic compounds having at least one radical selected from the group consisting of carbonyl and imino radicals and at least one radical selected from the group consisting of hydroxyl and amino radicals.
摘要翻译： 一种在施加DC或AC电压下具有长寿命动态光散射特性的液晶组合物，包括（1）至少一种选自向列型和胆甾醇型的液晶物质，和（2）至少一种选自 由（A）至少一种选自醌化合物，醌亚胺化合物，亚氨基化合物，脱氧苯偶姻化合物，二苄基甲烷化合物和三苯基甲烷化合物的至少一种第一有机环状化合物与至少一种第二有机环状化合物 选自氢醌化合物，芳族氨基化合物，杂环氨基化合物和脂环族氨基化合物，和（B）具有至少一个选自羰基和亚氨基的基团的芳族，杂环和脂环族化合物和至少一种 选自羟基和氨基的基团。
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