摘要:
The present invention develops a process for plasma treatment using a gas having no greenhouse effect in order to realize global environmental preservation and sophistication of plasma process performance and provides a process for plasma etching with high accuracy which process can depress damage to devices. The process for plasma treatment according to the present invention comprises the steps of feeding a treatment gas containing fluorine gas (F2) into a plasma generating chamber, alternately repeating application of high frequency electric field and stop of the application thereof to generate plasma, and carrying out substrate treatment by irradiating the plasma to a substrate. Furthermore, the substrate treatment may be carried out by individually or alternately extracting negative ions or positive ions from the plasma, or selectively extracting only negative ions, neutralizing them, to generate a neutral beam and irradiating the neutral beam to the substrate.
摘要翻译:本发明开发了一种使用不具有温室效应的气体进行等离子体处理的方法,以实现全球环境保持和等离子体处理性能的复杂化,并且以高精度提供等离子体蚀刻的方法,该方法可以抑制对器件的损害。 根据本发明的等离子体处理方法包括以下步骤:将含氟气体(F 2 N 2)的处理气体进料到等离子体产生室中,交替重复施加高频电场并停止 其用于产生等离子体,并通过将等离子体照射到基底上进行基板处理。 此外,基板处理可以通过单独或交替地从等离子体中提取负离子或正离子,或者仅选择性地仅提取负离子,中和它们,以产生中性光束并将中性光束照射到衬底来进行。
摘要:
A step (1) of heating a fluoronickel compound to release a fluorine gas, a step (2) of allowing a fluorine gas to be occluded into a fluorinated compound, and a step (3) of heating the fluoronickel compound and reducing an inner pressure are conducted in a container, respectively, at least once, and thereafter a high-purity fluorine gas is obtained in the step (1). Also, a step (5) of heating a fluoronickel compound and reducing an inner pressure and a step (6) of allowing a fluorine gas reduced in a hydrogen fluoride content to be occluded into the fluoronickel compound are conducted in a container having a fluorinated layer formed on its surface, respectively, at least once, the step (5) is further conducted, and thereafter a fluorine gas containing impurity gases is contacted with the fluoronickel compound to fix and remove the fluorine gas, and the impurities are analyzed by gas chromatography.
摘要:
A treating method comprising contacting a fluorine-containing interhalogen compound first with a treating agent for the fluorine component and then with a treating agent for the halogen component, treating agents therefor, and a method for treating exhaust gas containing a fluorine-containing interhalogen compound, comprising filling a treating agent for the fluorine component into the internal cylinder of a treating apparatus having a double cylinder structure consisting of an internal cylinder and an external cylinder, filling a treating agent for the halogen component into the external cylinder, feeding exhaust gas containing a fluorine-containing interhalogen compound into the internal cylinder to travel the internal cylinder and the external cylinder in this order, and then discharging the treated gas from the external cylinder.
摘要:
Exhaust gas containing fluorine gas or halogen fluoride gas emitted from etching or cleaning steps is burned in a combustion chamber having a fluoride passivation film formed on its surface. It is possible to treat exhaust gas emitted from semiconductor fabrication processes which contains fluorine gas or halogen fluoride gas in high concentrations or large volumes, while abatement treatment can be accomplished safely and efficiently with less energy usage.
摘要:
A supplying method and a supplying apparatus for supplying fluorine gas, in which when a fluorine-occluding substance is used for the fluorine gas-generating means, a necessary amount of fluorine gas can be stably and swiftly supplied to have a uniform concentration to &a chamber of an excimer laser device or the like even at running, to say nothing of the gas exchange time. In a fluorine gas-generating means, fluorine gas is generated at the use point by controlling a fluorine-occluding substance to a predetermined temperature, the fluorine gas is introduced into a mixing container, a diluting gas is introduced into the mixing container to mix it with the fluorine gas to prepare a fluorine mixed gas having a predetermined pressure and a predetermined fluorine gas concentration, and the fluorine mixed gas reserved in the mixing container is supplied to a use side such as chamber, using the pressure difference.