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    Method for predicting the mobility in mobile ad hoc networks
    1.
    发明申请
    Method for predicting the mobility in mobile ad hoc networks 审中-公开
    用于预测移动自组织网络中的移动性的方法

    公开(公告)号：US20090046678A1

    公开(公告)日：2009-02-19

    申请号：US11892031

    申请日：2007-08-17

    申请人： Young-Koo Lee ,  Sungyoung Lee ,  Hui Xu

    发明人： Young-Koo Lee ,  Sungyoung Lee ,  Hui Xu

    IPC分类号： H04Q7/24

    CPC分类号： H04W8/005 ,  H04W40/18 ,  H04W40/20 ,  H04W40/24

    摘要： Disclosed are methods for determining the neighborhood local view of a mobile node in time which can facilitate the forwarding decision in the design of network protocols. In conventional mobile ad hoc networks nodes set up local topology view based on periodical received “Hello” messages. The conventional method is replaced with proactive and adaptive methods of predicting locations of nodes based on preserved historical information extracted from received “Hello” messages and constructing neighborhood view by aggregating predicted locations. This method is useful for providing updated and consistent topology local view that a network communication employs to determine optimal forward decisions and improve communication performance.

    摘要翻译： 公开了用于确定移动节点在时间上的邻近局部视图的方法，其可以促进网络协议的设计中的转发决定。 在传统的移动自组织网络节点中，基于周期性接收的“Hello”消息来建立本地拓扑视图。 传统方法被替换为基于从接收的“Hello”消息提取的保留的历史信息预测节点位置的主动和自适应方法，并通过聚合预测位置来构建邻域视图。 该方法对于提供网络通信采用的更新和一致的拓扑局部视图来确定最佳前向决策并提高通信性能是有用的。

    METHOD FOR RECONCILING MAPPINGS IN DYNAMIC/EVOLVING WEB-ONTOLOGIES USING CHANGE HISTORY ONTOLOGY
    4.
    发明申请
    METHOD FOR RECONCILING MAPPINGS IN DYNAMIC/EVOLVING WEB-ONTOLOGIES USING CHANGE HISTORY ONTOLOGY 审中-公开
    使用变化历史原理在动态/演化网络中重建映射的方法

    公开(公告)号：US20110078698A1

    公开(公告)日：2011-03-31

    申请号：US12576342

    申请日：2009-10-09

    申请人： Sungyoung Lee ,  Young-Koo Lee ,  Hyoungil Kim ,  Manhyung Han ,  Asad Masood Khattak

    发明人： Sungyoung Lee ,  Young-Koo Lee ,  Hyoungil Kim ,  Manhyung Han ,  Asad Masood Khattak

    IPC分类号： G06F9/50

    CPC分类号： G06F16/367

    摘要： The present invention is directed to reconciliation/reengineering of mappings in dynamic/evolving ontologies. Mappings are established among different ontologies for resolving the terminological and conceptual incompatibilities and support information exchange. As ontology evolves from one consistent state to another consistent state; this consequently makes the existing mappings of the domain ontology with other ontologies unreliable and staled, so mapping evolution is required. The present invention uses Change History Log of ontology changes to drastically reduce the time required for (re)establishing mappings among ontologies, achieving higher accuracy, and eliminating staleness in mappings. It is valid for more than two ontologies with local, centralized, and distributed Change History Log.

    摘要翻译： 本发明涉及在动态/演化本体中映射的对账/再造。 映射在不同的本体之间建立，用于解决术语和概念的不兼容性并支持信息交换。 随着本体从一个一致的状态演变到另一个一致的状态; 因此，现有的域本体与其他本体的映射不可靠和稳定，因此需要映射演化。 本发明使用本体变化的变化历史日志大幅度地减少（重新）建立本体之间的映射所需的时间，实现更高的准确性，并消除映射的陈旧。 它适用于具有本地，集中式和分布式更改历史记录的两个以上本体。

    Semiconductor device having a round-shaped nano-wire transistor channel and method of manufacturing same
    5.
    发明授权
    Semiconductor device having a round-shaped nano-wire transistor channel and method of manufacturing same 有权
    具有圆形纳米线晶体管沟道的半导体器件及其制造方法

    公开(公告)号：US08110471B2

    公开(公告)日：2012-02-07

    申请号：US12623970

    申请日：2009-11-23

    申请人： Sungyoung Lee ,  Dongsuk Shin

    发明人： Sungyoung Lee ,  Dongsuk Shin

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7854 ,  B82Y10/00 ,  H01L29/045 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/66772 ,  H01L29/66795

    摘要： A field-effect transistor (FET) with a round-shaped nano-wire channel and a method of manufacturing the FET are provided. According to the method, source and drain regions are formed on a semiconductor substrate. A plurality of preliminary channel regions is coupled between the source and drain regions. The preliminary channel regions are etched, and the etched preliminary channel regions are annealed to form FET channel regions, the FET channel regions having a substantially circular cross-sectional shape.

    摘要翻译： 提供具有圆形纳米线通道的场效应晶体管（FET）和制造FET的方法。 根据该方法，源极和漏极区域形成在半导体衬底上。 多个初级沟道区域耦合在源区和漏区之间。 蚀刻初步沟道区，蚀刻的初级沟道区被退火以形成FET沟道区，FET沟道区具有基本圆形的横截面形状。

    Semiconductor device having a round-shaped nano-wire transistor channel and method of manufacturing same
    7.
    发明申请
    Semiconductor device having a round-shaped nano-wire transistor channel and method of manufacturing same 有权
    具有圆形纳米线晶体管沟道的半导体器件及其制造方法

    公开(公告)号：US20060216897A1

    公开(公告)日：2006-09-28

    申请号：US11303408

    申请日：2005-12-16

    申请人： Sungyoung Lee ,  Dongsuk Shin

    发明人： Sungyoung Lee ,  Dongsuk Shin

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7854 ,  B82Y10/00 ,  H01L29/045 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/66772 ,  H01L29/66795

    摘要： A field-effect transistor (FET) with a round-shaped nano-wire channel and a method of manufacturing the FET are provided. According to the method, source and drain regions are formed on a semiconductor substrate. A plurality of preliminary channel regions is coupled between the source and drain regions. The preliminary channel regions are etched, and the etched preliminary channel regions are annealed to form FET channel regions, the FET channel regions having a substantially circular cross-sectional shape.

    摘要翻译： 提供具有圆形纳米线通道的场效应晶体管（FET）和制造FET的方法。 根据该方法，源极和漏极区域形成在半导体衬底上。 多个初级沟道区域耦合在源区和漏区之间。 蚀刻初步沟道区，蚀刻的初级沟道区被退火以形成FET沟道区，FET沟道区具有基本圆形的横截面形状。

    Semiconductor device having a round-shaped nano-wire transistor channel and method of manufacturing same
    10.
    发明授权
    Semiconductor device having a round-shaped nano-wire transistor channel and method of manufacturing same 有权
    具有圆形纳米线晶体管沟道的半导体器件及其制造方法

    公开(公告)号：US07642578B2

    公开(公告)日：2010-01-05

    申请号：US11303408

    申请日：2005-12-16

    申请人： Sungyoung Lee ,  Dongsuk Shin

    发明人： Sungyoung Lee ,  Dongsuk Shin

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7854 ,  B82Y10/00 ,  H01L29/045 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/66772 ,  H01L29/66795

    摘要： A field-effect transistor (FET) with a round-shaped nano-wire channel and a method of manufacturing the FET are provided. According to the method, source and drain regions are formed on a semiconductor substrate. A plurality of preliminary channel regions is coupled between the source and drain regions. The preliminary channel regions are etched, and the etched preliminary channel regions are annealed to form FET channel regions, the FET channel regions having a substantially circular cross-sectional shape.

    摘要翻译： 提供具有圆形纳米线通道的场效应晶体管（FET）和制造FET的方法。 根据该方法，源极和漏极区域形成在半导体衬底上。 多个初级沟道区域耦合在源区和漏区之间。 蚀刻初步沟道区，蚀刻的初级沟道区被退火以形成FET沟道区，FET沟道区具有基本圆形的横截面形状。