摘要:
A white-light emitting device comprises a substrate, a short wavelength light source, a protective layer, a first structure, and a second structure. The short wavelength light source is disposed on the substrate for generating a first light, and the protective layer covering the short wavelength light source is pervious to the first light. The first structure is disposed on the protective layer for generating a second light, in which the first structure includes a first quantum well and a transmission layer. The second structure is disposed on the first structure for generating a third light. Finally, the first light, the second light, and the third light are mixed to generate a white light.
摘要:
A white-light emitting device comprises a substrate, a short wavelength light source, a protective layer, a first structure, and a second structure. The short wavelength light source is disposed on the substrate for generating a first light, and the protective layer covering the short wavelength light source is pervious to the first light. The first structure is disposed on the protective layer for generating a second light, in which the first structure includes a first quantum well and a transmission layer. The second structure is disposed on the first structure for generating a third light. Finally, the first light, the second light, and the third light are mixed to generate a white light.
摘要:
A light emitting diode package and a fabrication method thereof are provided. The light emitting diode package comprises a lead frame, having a frame body and a conductive layer covering the frame body. A reflector has a first portion and a second portion sandwiching the lead frame, wherein the first portion has a depression to expose the lead frame, and a light emitting diode chip is disposed on the lead frame in the depression. The fabrication method comprises forming a frame body and forming a conductive layer covering the frame body to form a lead frame. A first portion and a second portion of a reflector are formed to sandwich the lead frame, wherein the first portion has a depression to expose the lead frame. A light emitting diode chip is disposed on the lead frame in the depression.
摘要:
A compound represented by the following formula: SrxMyAlzSi12−zN16−zO2+z wherein, M is selected from the group consisting of rare earth elements and yttrium, x>0, y>0, x+y=2, and 0≦z≦5. The compound may be used as a phosphor. It emits a visible light upon being excited by a blue light and/or an ultra-violet light. When M is Eu, the compound emits a yellow-green light upon being excited by a blue light and/or an ultra-violet light.
摘要翻译:由下式表示的化合物:<?in-line-formula description =“In-line Formulas”end =“lead”?> Sr sub> M sub> α2-z N 2 -Z 2 -Z 2 -Z-α-in-line-formula description =“ 其中,M选自稀土元素和钇,x> 0,y> 0,x + y = 2,0 <= z <= 5 。 该化合物可以用作荧光体。 当被蓝光和/或紫外线激发时,它发出可见光。 当M为Eu时,由蓝色光和/或紫外线激发时,该化合物发出黄绿色光。
摘要:
A semiconductor process is described as follows. A material layer is provided on a substrate. A low-temperature oxidation treatment is performed to the material layer. A photoresist layer is formed on the material layer after the low-temperature oxidation treatment. The photoresist layer is patterned.
摘要:
A light emitting diode package and a fabrication method thereof are provided. The light emitting diode package comprises a lead frame, having a frame body and a conductive layer covering the frame body. A reflector has a first portion and a second portion sandwiching the lead frame, wherein the first portion has a depression to expose the lead frame, and a light emitting diode chip is disposed on the lead frame in the depression. The fabrication method comprises forming a frame body and forming a conductive layer covering the frame body to form a lead frame. A first portion and a second portion of a reflector are formed to sandwich the lead frame, wherein the first portion has a depression to expose the lead frame. A light emitting diode chip is disposed on the lead frame in the depression.
摘要:
A method for forming a photoresist layer is provided. The method includes following steps. A wafer is provided in a semiconductor machine. The wafer is spun at a first spin speed. A pre-wet solvent is dispensed on the spinning wafer by using a nozzle disposed at a fixed position. The pre-wet solvent then stops dispensing. The spin speed of the wafer is adjusted from the first spin speed to a second spin speed which is faster than the first spin speed. Thereafter, a photoresist layer is coated on the wafer.
摘要:
A light-emitting diode (LED) and manufacturing method thereof are disclosed. The LED includes a transparent substrate, a plurality of transparent conductive layers, a plurality of metal circuits, and a LED chip. The LED chip is suitable for emitting a light and a portion of the light emits toward the transparent substrate. The manufacturing method of LED includes the following steps. First, a transparent conductive layer is formed on the transparent substrate. Next, a conductive pattern is formed by etching transparent conductive layer. The intersection metal circuit is formed by disposing the metal on a portion of the transparent conductive layer. Finally, the LED chip is disposed on the metal circuit so that the LED chip is electrically connected to the metal circuit.
摘要:
A light emitting diode package and a fabrication method thereof are provided. The light emitting diode package comprises a lead frame, having a frame body and a conductive layer covering the frame body. A reflector has a first portion and a second portion sandwiching the lead frame, wherein the first portion has a depression to expose the lead frame, and a light emitting diode chip is disposed on the lead frame in the depression. The fabrication method comprises forming a frame body and forming a conductive layer covering the frame body to form a lead frame. A first portion and a second portion of a reflector are formed to sandwich the lead frame, wherein the first portion has a depression to expose the lead frame. A light emitting diode chip is disposed on the lead frame in the depression.
摘要:
A light-emitting diode (LED) and manufacturing method thereof are disclosed. The LED includes a transparent substrate, a plurality of transparent conductive layers, a plurality of metal circuits, and a LED chip. The LED chip is suitable for emitting a light and a portion of the light emits toward the transparent substrate. The manufacturing method of LED includes the following steps. First, a transparent conductive layer is formed on the transparent substrate. Next, a conductive pattern is formed by etching transparent conductive layer. The intersection metal circuit is formed by disposing the metal on a portion of the transparent conductive layer. Finally, the LED chip is disposed on the metal circuit so that the LED chip is electrically connected to the metal circuit.