Signal splitter
    1.
    发明授权
    Signal splitter 失效
    信号分路器

    公开(公告)号:US07432782B2

    公开(公告)日:2008-10-07

    申请号:US11518032

    申请日:2006-09-08

    IPC分类号: H04B3/28 H03H7/46 H03H7/01

    CPC分类号: H03H7/48

    摘要: A signal splitter includes a low-pass filter circuit for permitting a low-frequency component of an incoming signal in an incoming telephone line coupled to a first connecting port to pass therethrough to a second connecting port, and a coupling circuit including a capacitor coupled between a first terminal of the first connecting port and a second terminal of the second connecting port, and a coupling transformer having a primary winding that interconnects the first terminal of the first connecting port and a first input end of the low-pass filter circuit, and a secondary winding that interconnects the second terminal of the second connecting port and a second output end of the low-pass filter circuit.

    摘要翻译: 信号分离器包括低通滤波器电路,用于允许耦合到第一连接端口的输入电话线中的输入信号的低频分量通过第二连接端口,并且耦合电路包括耦合在 第一连接端口的第一端子和第二连接端口的第二端子,以及耦合变压器,其具有将第一连接端口的第一端子和低通滤波器电路的第一输入端互连的初级绕组,以及 将第二连接端口的第二端子与低通滤波器电路的第二输出端相互连接的次级绕组。

    Signal splitter
    2.
    发明申请

    公开(公告)号:US20080061904A1

    公开(公告)日:2008-03-13

    申请号:US11518032

    申请日:2006-09-08

    IPC分类号: H03H7/46

    CPC分类号: H03H7/48

    摘要: A signal splitter includes a low-pass filter circuit for permitting a low-frequency component of an incoming signal in an incoming telephone line coupled to a first connecting port to pass therethrough to a second connecting port, and a coupling circuit including a capacitor coupled between a first terminal of the first connecting port and a second terminal of the second connecting port, and a coupling transformer having a primary winding that interconnects the first terminal of the first connecting port and a first input end of the low-pass filter circuit, and a secondary winding that interconnects the second terminal of the second connecting port and a second output end of the low-pass filter circuit.

    Signal splitter
    3.
    发明申请
    Signal splitter 审中-公开
    信号分路器

    公开(公告)号:US20080074210A1

    公开(公告)日:2008-03-27

    申请号:US11518009

    申请日:2006-09-08

    IPC分类号: H01P5/12

    CPC分类号: H03H7/46 H03H7/09

    摘要: A signal splitter includes a common mode choke circuit that includes a first choke coil having two input nodes coupled to an incoming telephone line, and two output nodes coupled respectively to two first input nodes of a first filter inductor of a first filter circuit, and a second choke coil having two input nodes coupled respectively to two second output nodes of a second filter inductor of a third filter circuit, and two output nodes coupled to a telephony instrument. A second filter circuit includes a first capacitor coupled between two first output nodes of the first filter inductor that are coupled respectively to two second input nodes of the second filter inductor. The third filter circuit further includes a second capacitor coupled between the second output nodes of the second filter inductor.

    摘要翻译: 信号分离器包括共模扼流电路,其包括具有耦合到输入电话线的两个输入节点的第一扼流线圈和分别耦合到第一滤波器电路的第一滤波电感器的两个第一输入节点的两个输出节点,以及 第二扼流线圈具有两个输入节点,分别耦合到第三滤波器电路的第二滤波电感器的两个第二输出节点,以及耦合到电话仪器的两个输出节点。 第二滤波器电路包括耦合在第一滤波电感器的两个第一输出节点之间的第一电容器,其分别耦合到第二滤波电感器的两个第二输入节点。 第三滤波器电路还包括耦合在第二滤波电感器的第二输出节点之间的第二电容器。

    LIGHT-EMITTING DIODE STRUCTURE
    5.
    发明申请
    LIGHT-EMITTING DIODE STRUCTURE 审中-公开
    发光二极管结构

    公开(公告)号:US20110175126A1

    公开(公告)日:2011-07-21

    申请号:US13008702

    申请日:2011-01-18

    IPC分类号: H01L31/0352 B82Y99/00

    摘要: A light emitting diode device is provided, which comprises a substrate comprising a first growth surface and a bottom surface opposite to the first growth surface; a dielectric layer with a plurality of openings therein formed on the first growth surface; a plurality of semiconductor nano-scaled structures formed on the substrate protruding through the openings; a layer formed on the plurality of semiconductor nano-scaled structures with a second growth surface substantially parallel with the bottom surface; a light emitting diode structure formed on the second growth surface; wherein the diameters of the openings are smaller than 250 nm, and wherein the diameters of the plurality semiconductor nano-scaled structures are larger than the diameters of the corresponding openings.

    摘要翻译: 提供了一种发光二极管器件,其包括:衬底,其包括与第一生长表面相对的第一生长表面和底表面; 在第一生长表面上形成有多个开口的电介质层; 形成在所述基板上的多个半导体纳米尺度结构,所述多个半导体纳米级结构通过所述开口突出; 形成在所述多个半导体纳米级结构上的层,其具有基本上平行于所述底表面的第二生长表面; 形成在所述第二生长表面上的发光二极管结构; 其中所述开口的直径小于250nm,并且其中所述多个半导体纳米尺度结构的直径大于相应开口的直径。