公开(公告)号：US5968285A

公开(公告)日：1999-10-19

申请号：US90453

申请日：1998-06-04

Applicant: Gary W. Ferrell ,  Thomas D. Spencer ,  Rob E. Carter

Inventor： Gary W. Ferrell ,  Thomas D. Spencer ,  Rob E. Carter

IPC: B08B3/10 ,  B08B3/12 ,  F26B5/00 ,  F26B21/14 ,  H01L21/00 ,  H01L21/306 ,  B08B3/04

CPC classification number: H01L21/02052 ,  B08B3/102 ,  B08B3/12 ,  F26B21/145 ,  F26B5/005 ,  H01L21/67028 ,  Y10S134/902

Abstract: Methods for cleaning and/or drying objects that may have been wetted or contaminated in a manufacturing process. The objects are submerged in a rinse liquid in an enclosed chamber, and aerosol particles from a selected liquid are introduced into the chamber above the rinse liquid surface, forming a thin film on this surface. As the rinse liquid is slowly drained, some aerosol particles settle onto the exposed surfaces of the objects, and displace and remove rinse liquid residues from the exposed surfaces, possibly by a "chemical squeegeeing" effect. Surface contaminants are also removed by this process which may be performed at about room temperature. Chamber pressure is maintained at or near the external environment pressure as the rinse liquid is drained from the chamber. Inert gas flow is employed to provide aerosol particles of smaller size and/or with greater dispersion within the chamber. Continuous filtering and shunt filtering are employed to remove most contaminants from the selected liquid. A flow deflector redirects initial flow of the selected liquid to a supplementary filter, to remove most of the contaminant particle "spike" that appears when a system is first (re)activated. An improved surface for aerosol particle production is provided.

Abstract translation: 在制造过程中清洁和/或干燥可能被弄湿或污染的物体的方法。 物体被浸没在封闭室中的漂洗液中，并且来自选择的液体的气溶胶颗粒被引入冲洗液体表面上方的室中，在该表面上形成薄膜。 当漂洗液体缓慢排出时，一些气溶胶颗粒沉积在物体的暴露表面上，并可能通过“化学刮涂”效应从暴露的表面置换和去除漂洗液体残留物。 表面污染物也可以通过该方法除去，这可以在大约室温下进行。 当冲洗液体从室排出时，室压力保持在或接近外部环境压力。 使用惰性气体流动来提供在室内更小尺寸和/或更大分散的气溶胶颗粒。 采用连续过滤和分流过滤从所选择的液体中除去大多数污染物。 导流器将所选择的液体的初始流动重定向到补充过滤器，以去除系统首次（再次）激活时出现的大部分污染物颗粒“尖峰”。 提供了用于气溶胶颗粒生产的改进的表面。

公开(公告)号：US5685086A

公开(公告)日：1997-11-11

申请号：US616165

申请日：1996-03-14

Applicant: Gary W. Ferrell

Inventor： Gary W. Ferrell

IPC: B08B3/10 ,  B08B3/12 ,  F26B5/00 ,  F26B21/14 ,  H01L21/00 ,  H01L21/306 ,  F26B19/00

CPC classification number: B08B3/102 ,  B08B3/12 ,  F26B21/145 ,  F26B5/005 ,  H01L21/02052 ,  H01L21/67028

Abstract: Method and apparatus for drying objects that may have been wetted in a manufacturing The objects are submerged in a rinse liquid in an enclosed chamber, and aerosol particles from a selected drying liquid are introduced into the chamber above the rinse liquid surface, forming a thin film on this surface. As the rinse liquid is slowly drained, some aerosol particles settle onto and form a film on the exposed surfaces of the objects, and displace and remove rinse liquid residues from the exposed surfaces. Surface contaminants are also removed by this process.

Abstract translation: 用于干燥可能在制造中被润湿的物体的方法和设备将物体浸没在封闭室中的冲洗液体中，并且将来自选择的干燥液体的气溶胶颗粒引入冲洗液体表面上方的室中，形成薄膜 在这个表面上。 当漂洗液体缓慢排出时，一些气溶胶颗粒沉积在物体的暴露表面上并形成膜，并从暴露的表面置换和去除漂洗液体残留物。 表面污染物也可以通过这种方法去除。

公开(公告)号：US6036785A

公开(公告)日：2000-03-14

申请号：US850272

申请日：1997-05-02

Applicant: Gary W. Ferrell

Inventor： Gary W. Ferrell

IPC: B08B3/12 ,  B24C3/32 ,  H01L21/00 ,  B08B3/08 ,  B08B7/02

CPC classification number: B24C5/005 ,  B08B3/12 ,  B24C3/322 ,  H01L21/67051

Abstract: Method [and apparatus ] for quickly and controllably removing chemical residues and particle accumulations from an exposed surface of an object. A slurry, containing a slurry liquid and containing small scrubber particles that optionally have a range of at least two distinct particle sizes, is directed at the exposed surface to remove most or all of the residues and accumulations from the exposed surface. The slurry flow may be pulsed or be relatively constant. The exposed surface of the object is then partly or fully submerged in a rinse liquid that includes a strong base and/or a strong oxidizing agent. The rinse liquid is subjected to ultrasonic wave motion with a chosen wave displacement direction, and the ultrasonic waves have one or more distinct wavelengths, chosen to cover a range of expected sizes of chemical residues, particle accumulations and/or scrubber particles to be removed. Optionally, the ultrasonic wave displacement direction is chosen approximately parallel to an exposed surface from which residues, accumulations and/or scrubber particles are to be removed. Optionally, the ultrasonic wavelength(s) may be varied with time over a selected range of wavelengths that cover the range of sizes of particles to be removed.

Abstract translation: 用于快速且可控地从物体的暴露表面去除化学残留物和颗粒积聚的方法[和装置]。 含有浆料液体并且含有任选具有至少两个不同粒度范围的小洗涤器颗粒的浆料指向暴露的表面以去除暴露表面的大部分或全部残留物和积聚物。 浆料流可以是脉冲的或相对恒定的。 然后将物体的暴露表面部分或完全浸没在包括强碱和/或强氧化剂的漂洗液中。 冲洗液体以选定的波动位移方向进行超声波运动，超声波具有一个或多个不同的波长，被选择为覆盖待除去的化学残留物，颗粒积聚和/或洗涤器颗粒的预期大小的范围。 可选地，超声波位移方向被选择为近似平行于暴露的表面，残留物，积聚物和/或洗涤剂颗粒将从其中除去。 可选地，超声波波长可以随着时间的推移而在覆盖要去除的颗粒的尺寸范围的选定波长范围内变化。

公开(公告)号：US5964958A

公开(公告)日：1999-10-12

申请号：US984413

申请日：1997-12-03

Applicant: Gary W. Ferrell ,  Thomas D. Spencer

Inventor： Gary W. Ferrell ,  Thomas D. Spencer

IPC: B08B3/10 ,  B08B3/12 ,  F26B5/00 ,  F26B21/14 ,  H01L21/00 ,  H01L21/306 ,  B08B3/04

CPC classification number: H01L21/02052 ,  B08B3/102 ,  B08B3/12 ,  F26B21/145 ,  F26B5/005 ,  H01L21/67028 ,  Y10S134/902

Abstract: Methods for drying and cleaning objects that may have been wetted or contaminated in a manufacturing process. The objects are submerged in a rinse liquid in an enclosed chamber, and aerosol particles from a selected liquid are introduced into the chamber above the rinse liquid surface, forming a thin film on this surface. As the rinse liquid is slowly drained, some aerosol particles settle onto the exposed surfaces of the objects, and displace and remove rinse liquid residues from the exposed surfaces, possibly by a "chemical squeegeeing" effect. Surface contarminants are also removed by this process, which may be carried out at or near room temperature. Chamber pressure is maintained at or near the external environment pressure as the rinse liquid is drained from the chamber.

Abstract translation: 用于干燥和清洁可能在制造过程中被弄湿或污染的物体的方法。 物体被浸没在封闭室中的漂洗液中，并且来自选择的液体的气溶胶颗粒被引入冲洗液体表面上方的室中，在该表面上形成薄膜。 当漂洗液体缓慢排出时，一些气溶胶颗粒沉积在物体的暴露表面上，并可能通过“化学刮涂”效应从暴露的表面置换和去除漂洗液体残留物。 也可以通过该方法除去表面质子，其可以在室温或接近室温下进行。 当冲洗液体从室排出时，室压力保持在或接近外部环境压力。

公开(公告)号：US5909741A

公开(公告)日：1999-06-08

申请号：US879576

申请日：1997-06-20

Applicant: Gary W. Ferrell

Inventor： Gary W. Ferrell

IPC: B08B3/12 ,  H01L21/00 ,  H05K3/26

CPC classification number: H01L21/67086 ,  B08B3/12 ,  H01L21/67057 ,  H05K3/26 ,  Y10S134/902

Abstract: Method and apparatus for processing a workpiece in a chemical bath liquid contained in a liquid container. The liquid container is fabricated from a material such as polyetheretherketone (PEEK), poly-amide-imide (PAI) or polyphenylene sulfide (PPS). A vibration generator is positioned on each of one or more container walls to introduce vibrations with a selected frequency (20-750 kHz) through the container wall(s) and into the chemical bath liquid. Two or more vibration generators may introduce vibrations with different frequencies into the chemical bath liquid and at different angles. The chemical bath liquid may be an acid such as HCl, H.sub.2 SO.sub.4, HNO.sub.3, H.sub.2 PO.sub.3 and HF, or may be an oxidizer or base such as NH.sub.4 OH and H.sub.2 O.sub.2. The chemical bath may be used to process semiconductor wafers and circuits, printed circuit boards, optical components and similar workpieces.

Abstract translation: 用于处理容纳在液体容器中的化学浴液体中的工件的方法和装置。 液体容器由聚醚醚酮（PEEK），聚酰胺 - 酰亚胺（PAI）或聚苯硫醚（PPS）等材料制成。 振动发生器位于一个或多个容器壁中的每一个上，以通过容器壁引入选定频率（20-750kHz）的振动并进入化学浴液体。 两个或更多个振动发生器可以将不同频率的振动引入化学浴液体并以不同的角度。 化学浴液可以是酸如HCl，H 2 SO 4，HNO 3，H 2 PO 3和HF，或者可以是氧化剂或碱如NH 4 OH和H 2 O 2。 化学浴可用于处理半导体晶片和电路，印刷电路板，光学部件和类似的工件。

公开(公告)号：US5653045A

公开(公告)日：1997-08-05

申请号：US484921

申请日：1995-06-07

Applicant: Gary W. Ferrell

Inventor： Gary W. Ferrell

IPC: B08B3/10 ,  B08B3/12 ,  F26B5/00 ,  F26B21/14 ,  H01L21/00 ,  H01L21/306

CPC classification number: H01L21/02052 ,  B08B3/102 ,  B08B3/12 ,  F26B21/145 ,  F26B5/005 ,  H01L21/67028

Abstract: An apparatus and method for drying single or multiple parts or objects wherein the apparatus uses a drying chamber for containing said object or objects, said drying chamber having a closeable entryway for providing access to said drying chamber, the use of a sonic head disposed in said drying chamber attached to a source of drying liquid and an adjustable supply and drain attached to said drying chamber for introducing and removing said drying fluid to and from said drying chamber.

Abstract translation: 一种用于干燥单个或多个部件或物体的设备和方法，其中所述设备使用用于容纳所述物体的干燥室，所述干燥室具有用于提供通向所述干燥室的可密闭入口，使用设置在所述干燥室中的声波头 干燥室，其连接到干燥液源，以及连接到所述干燥室的可调节的供应和排出物，用于将所述干燥流体引入和从所述干燥室中排出。

公开(公告)号：US5505785A

公开(公告)日：1996-04-09

申请号：US276202

申请日：1994-07-18

Applicant: Gary W. Ferrell

Inventor： Gary W. Ferrell

IPC: B08B3/08 ,  B08B3/10 ,  B08B3/12 ,  H01L21/00 ,  H01L21/306

CPC classification number: H01L21/02052 ,  B08B3/08 ,  B08B3/10 ,  B08B3/12 ,  H01L21/67057

Abstract: A method and apparatus for removing particle, metallic and organic contamination from the wafers used in fabricating integrated circuits is disclosed. In the preferred embodiment, the method comprises the step of placing the wafers to be processed in a vessel or container constructed of a very pure metal, and upon which a surface oxide will quickly form in air. The metal vessel or container is then filled with a cleaning solvent such as sulfuric acid, and are ultrasonically vibrated to remove the contamination. The ultrasonic vibration causes an acoustic streaming of the sulfuric acid, leading to a microflow of the solvent across the surface of the wafer at speeds on the order of several meters per second. This microflow provides for an quick and efficient cleaning of the wafer at reduced temperatures, thereby increasing the overall throughput of the planar fabrication process. The apparatus comprises a vessel or container constructed from a very pure metal, and containing an acidic cleaning solvent. The metal vessel or container is coupled to an ultrasonic vibrating device which ultrasonically vibrates the vessel or container, thereby cleaning the wafers.

Abstract translation: 公开了一种用于从用于制造集成电路的晶片中去除颗粒，金属和有机污染物的方法和装置。 在优选实施例中，该方法包括以下步骤：将要处理的晶片放置在由非常纯的金属构成的容器或容器中，并且在空气中快速形成表面氧化物。 然后将金属容器或容器装入诸如硫酸的清洁溶剂中，并且超声振动以除去污染物。 超声波振动导致硫酸的声流，导致溶剂在晶片表面上的微流量以几米每秒的速度。 该微流提供了在降低的温度下快速且有效地清洁晶片，从而增加了平面制造工艺的总体生产量。 该装置包括由非常纯的金属构成并容纳酸性清洁溶剂的容器或容器。 金属容器或容器联接到超声波振动装置，其超声振动容器或容器，从而清洁晶片。

公开(公告)号：US6119366A

公开(公告)日：2000-09-19

申请号：US109460

申请日：1998-07-02

Applicant: Gary W. Ferrell ,  Robert J. Elson ,  John F. Schipper

Inventor： Gary W. Ferrell ,  Robert J. Elson ,  John F. Schipper

IPC: H01L21/00 ,  H05K3/26 ,  F26B3/00

CPC classification number: H01L21/6704 ,  H01L21/67034 ,  H05K3/26

Abstract: Method and apparatus for drying and/or cleaning a workpiece, such as an electronic part, semiconductor wafer, printed circuit board or the like. As the workpiece is withdrawn from a processing liquid, a selected drying liquid, such as hydrofluoroether (HFE), ethylated HFE, an HFE azeotrope or an ethylated HFE azeotrope, that has a very small surface tension, is volatile, and has a density that is greater than the processing liquid density, is sprayed on, dribbled on or otherwise transferred to an exposed surface of the workpiece. The exposed surface may be stationary, may be rotating or may be moving along a selected path. The workpiece can be dried in 5-60 seconds, or less, in most situations and can be cleaned using the invention. Drying and/or cleaning can be performed in a single workpiece process, a single workpiece continuous process or a batch process.

Abstract translation: 用于干燥和/或清洁工件的方法和装置，例如电子部件，半导体晶片，印刷电路板等。 当工件从处理液体中取出时，具有非常小的表面张力的选定的干燥液体如氢氟醚（HFE），乙基化HFE，HFE共沸物或乙基化HFE共沸物是挥发性的，并且具有 大于处理液体密度，被喷涂，运送或以其他方式转移到工件的暴露表面。 暴露的表面可以是静止的，可以是旋转的或者可以沿着所选择的路径移动。 在大多数情况下，工件可以在5-60秒或更短的时间内干燥，并且可以使用本发明进行清洁。 干燥和/或清洁可以在单个工件工艺，单个工件连续工艺或间歇工艺中进行。