摘要:
Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.
摘要:
When a substrate on which a fine pattern is formed is dried with vapor, prevention of collapse of the pattern due to water originally contained in IPA to be stored has been a problem to be solved. A mixed liquid stored in a mixed liquid storage is vaporized to generate mixed vapor containing the IPA and water (water vapor). Then, a vapor dewatering unit connected to a vapor supply pipe through which the mixed vapor is fed removes water in the mixed vapor. This can reduce the concentration of water originally contained in the IPA to be stored before the IPA is supplied to the substrate, thereby suppressing collapse of the pattern.
摘要:
An apparatus and method for drying single or multiple parts or objects wherein the apparatus uses a drying chamber for containing said object or objects, said drying chamber having a closeable entryway for providing access to said drying chamber, the use of a sonic head disposed in said drying chamber attached to a source of drying liquid and an adjustable supply and drain attached to said drying chamber for introducing and removing said drying fluid to and from said drying chamber.
摘要:
An Isopropyl Alcohol (IPA) tank vapor/liquid phase separator for collecting liquid while still allowing for efficient vapor flow in an IPA tank includes a first row and a second row of spaced-apart coplanar parallel catch trays. Vapor flows upwardly through the openings between the catch trays. The catch trays are arranged so that contaminated IPA condensate falls into either the first or second row of catch trays. In one embodiment, both of the catch trays are upright V-shaped or upright semi-circular-shaped. In another embodiment the catch trays are formed as plates with staggered holes formed therein for upward passage of vapor and for downward collection of condensate.
摘要:
A wafer drying apparatus incorporated in a semiconductor wafer cleaning system includes a bath for storing IPA. A heater for generating an IPA vapor is arranged on the bath. The bath is surrounded by a housing. The housing has opening portions at three positions. The opening portions are opened/closed by shutters. A sensor for detecting a fire and a nozzle for discharging CO.sub.2 gas into the bath are arranged around the bath. A plurality of wafers are held by a chuck of a convey robot and are conveyed from the outside of the housing into the housing via the opening portions. When a fire is detected by the sensor, the chuck immediately retreats from the housing, and the shutters are closed. Signals for closing the shutters are transmitted to shutter drive sources again 10 seconds after the fire is detected, and discharging of CO.sub.2 gas is started 20 seconds after the fire is detected.
摘要:
A vapor drying apparatus for semiconductor wafers, which is capable of preventing dust particles from entering the interior of the vapor drying apparatus incorporating therein a water washing part and a vapor drying part for a semiconductor wafer and, at the same time, thoroughly removing from the surface of a vapor dried semiconductor wafer the vapor cleaner adhering in the form of film or in a molecular thickness to the surface or an organic substance contained in the cleaner thereby bringing the surface of the semiconductor wafer to an ideally cleaned and dried state.
摘要:
A vapor drying apparatus for semiconductor wafers, which is capable of preventing dust particles from entering the interior of the vapor drying apparatus incorporating therein a water washing part and a vapor drying part for a semiconductor wafer and, at the same time, thoroughly removing from the surface of a vapor dried semiconductor wafer the vapor cleaner adhering in the form of film or in a molecular thickness to the surface of an organic substance contained in the cleaner thereby bring the surface of the semiconductor wafer to an ideally cleaned and dried state.
摘要:
Apparatuses and methods for drying a surface of a substrate includes a proximity drying head having a head body that includes a process surface configured to be disposed opposite a surface of a substrate when present. The process surface includes a first region, a second region and a third region. The first region is defined at a leading edge of the head body and includes a cavity region that is recessed into the head body. The cavity region includes a plurality of inlet ports that are used to introduce a vapor fluid to the cavity region. The second region is disposed proximate to the surface of the substrate when present and is located beside the first region. The third region is disposed proximate to the surface of the substrate when present and is located beside the second region. A plurality of vacuum ports is defined at the interface of the second region and the third region. The third region includes a plurality of angled inlet ports that are directed toward the second region. A method for performing a drying operation includes applying heated isopropyl alcohol as vapor to a wafer surface in the first region and heating the underside region of the wafer corresponding to the first region. Heated Nitrogen is injected to the surface of the wafer in the third region. The deionized water and isopropyl alcohol are removed from the surface of the wafer through the vacuum ports along with the Nitrogen so as to leave the wafer surface substantially dry.
摘要:
Equipment provides more rapid drying of heating parts comprising hygroscopic, electric insulation made of cellulose and/or plastics. At least two condensers are present, one being used when heating the parts and the other in the distillation stage. As a result removal by distillation is possible any time during heating and during the time intervals when heating is interrupted and the pressure-dropping procedure is carried out in the vacuum vessel. Due to the second condenser (with a second, associated vacuum pump), the heating medium can be cleansed or distilled during the pressure-dropping procedure and simultaneously the suction or drying procedure can be carried out in the vacuum vessel. This feature leads to drying the electrical parts more rapidly than heretofore because the steps of drying the electrical parts and regenerating the heating medium no longer require being consecutive, but instead regeneration can be implemented simultaneously with the evacuation of the vicinity around the electrical parts. By using a two-condenser design and different connecting lines, the versatility of the equipment is substantially increased. For instance the two condensers together with their associated vacuum pumps can be used in parallel for drying to achieve higher drying output and a higher operational rate. However, the two condensers may just as well be used to cleanse the heating medium; in this case they are separate from the vacuum chamber and cool only the heating medium heated by the evaporator and fed through the bypass line.
摘要:
This invention pertains to a substrate cleaner and dryer or a dryer alone, and in particular, to an improved method of isopropyl alcohol (IPA) vapor drying having "closed loop" processing and capability to process extremely large substrates. The invention uses an inert gas, typically nitrogen (N.sub.2) or argon (Ar), as a process gas for carrying the vapor of a drying fluid in a "closed loop" cycle through a process vessel. The carrier gas and is pumped through a vapor generator and the process vessel in a rapid "closed loop" manner with extremely pure IPA vapor. Various embodiments employ the invention including two different vapor drying methods, a water rinse and vapor dry method and a solvent clean and vapor dry method. In either the water rinse and vapor dry method and a solvent clean and vapor dry method rinse water or cleaning fluid is rapidly drained in an unimpeded manner from the vessel while the process vessel is vented.