CHARGE-INJECTION SAR ADC FOR CORRECTING FULL SCALE PVT VARIATION

    公开(公告)号:US20240235565A1

    公开(公告)日:2024-07-11

    申请号:US18407613

    申请日:2024-01-09

    IPC分类号: H03M1/06

    CPC分类号: H03M1/0604

    摘要: A charge-injection SAR ADC device has a modified charge-injection cell (CIC), and a complementary to absolute temperature (CTAT) circuit for generating a bias voltage. The CIC and CTAT circuits cooperate to correct for process, voltage, and temperature (PVT) variation that affect SAR ADC input full scale. The CIC has been modified to have transistors that are in a cascoded relationship with transistors operating to maintain a reservoir of charge. The CTAT circuit is designed to substantially replicate the CIC, and it tracks the CIC operation to correct variations in transistor threshold voltage due to variations in PVT.

    Digital corrected two-step SAR ADC

    公开(公告)号:US10938399B1

    公开(公告)日:2021-03-02

    申请号:US16893946

    申请日:2020-06-05

    IPC分类号: H03M1/06

    摘要: A new SARADC has two low resolution SAR (Successive Approximation Register) ADCs coupled together by an amplifier to increase the overall resolution and enhance ADC conversion rate. The gain reduction of amplifier is corrected by shifting the digital binary output position. Two SAR ADC outputs are timing aligned and summed to produce final high-resolution high conversion rate ADC output.

    METHOD OF DATA CONVERSION FOR COMPUTING-IN-MEMORY

    公开(公告)号:US20220158651A1

    公开(公告)日:2022-05-19

    申请号:US16950950

    申请日:2020-11-18

    申请人: Yuan-Ju Chao

    发明人: Yuan-Ju Chao

    摘要: Computing-in-memory utilizes memory as weight for multiply-and-accumulate (MAC) operations. Input data multiplies weights to produce output data during the operation. Method of data conversion from input data, memory element to output data is described to enhance the computing efficiency.