Abstract:
A cold electron number amplifier device can provide a greater number of electrons at lower electron emitter temperature. The cold electron number amplifier device can comprise an evacuated enclosure 11, a first electron emitter 12 attached to the evacuated enclosure 11, and an electrically conductive second electron emitter 13 also attached to the evacuated enclosure. The first electron emitter 12 can be configured to emit electrons 14 within the evacuated enclosure 11. The second electron emitter 13 can have a voltage V2 greater than a voltage V1 of the first electron emitter 12 (V2>V1). The second electron emitter 13 can be positioned to receive impinging electrons 14 from the first electron emitter 12. Electrons 14 from the first electron emitter 12 can impart energy to electrons in the second electron emitter 13 and cause the second electron emitter 13 to emit more electrons 15.
Abstract:
A semiconductor source of emission electrons which uses a target of a wide bandgap semiconductor having a target thickness measured from an illumination surface to an emission surface. The semiconductor source is equipped with an arrangement for producing and directing a beam of seed electrons at the illumination surface and a mechanism for controlling the energy of the seed electrons such that the energy of the seed electrons is sufficient to generate electron-hole pairs in the target. A fraction of these electron-hole pairs supply the emission electrons. Furthermore, the target thickness and the energy of the seed electrons are optimized such that the emission electrons at the emission surface are substantially thermalized. The emission of electrons is further facilitated by generating negative electron affinity at the emission surface. The source of the invention can take advantage of diamond, AlN, BN, Ga1-yAlyN and (AlN)x(SiC)1-x, wherein 0≦y≦1 and 0.2≦x≦1 and other wide bandgap semiconductors.
Abstract:
A field emission device (FED) includes a top substrate having an anode electrode and a phosphor layer, a lower substrate, at least one cathode electrode having an opening-pattern with at least one opening, an insulating layer located on the cathode electrode, a gate layer located on the insulating layer, and an electron emitter located in the opening of the cathode electrode. The electron emitter is adjacent to the cathode electrode and is electrically connected therewith. The cathode electrode having the opening-pattern is located on a bottom panel. Through the structure illustrated above, uniformity of emitting electron density can be improved and brightness and contrast of color for the FED can be enhanced.
Abstract:
Provided are a photovoltaic device and a lamp and a display device using the same. The photovoltaic device includes a substrate; a conductive electric field enhanced layer including a plurality of partial electric field crowding end portions disposed on the substrate; an electron amplification layer disposed on the electric field enhanced layer and formed of a material that emits secondary electrons; and a photoelectric material layer disposed on the electron amplification layer. The photovoltaic device can be applied to various fields and used as a light emitting display device (OLED) to generate light with high luminance at a low voltage.
Abstract:
An electron gun (10) includes an electron multiplier (22, 22′, 22″, 110) has a receiving end (50, 50′, 50″) for receiving primary electrons and an output end (54, 54′, 54″) that emits secondary electrons responsive to primary electrons arriving at the receiving end. An electron emitter (20, 20′, 20″, 102) is arranged at the receiving end of the electron multiplier for supplying primary electrons thereto. At least one of an electrical and a magnetic focusing component (14, 16) is arranged at the open output end of the electron multiplier for focusing the secondary electrons to define an electron beam. In a suitable embodiment, the electron multiplier includes a generally conical substrate (74, 90) and an electron mirror (52, 521, 522, 523, 921, 922) including a high secondary electron yield film (70) disposed on an outer surface of the conical substrate.
Abstract:
The present invention pertains to an electron gun that generates an electron flow and the application of this gun to produce rf energy or for injectors. The electron gun comprises an electrostatic cavity having a first stage with emitting faces and multiple stages with emitting sections. The gun is also comprised of a mechanism for producing an electrostatic force which encompasses the emitting faces and the multiple emitting sections so electrons are directed from the emitting faces toward the emitting sections to contact the emitting sections and generate additional electrons and to further contact other emitting sections to generate additional electrons and so on then finally to escape the end of the cavity. The emitting sections preferably provide the cavity with an accelerating force for electrons inside the cavity. The multiple sections preferably include thin forward emitting surfaces. The forward emitting surfaces can be of an annular shape, or of a circular shape, or of a rhombohedron shape. The mechanism preferably includes a mechanism for producing an electrostatic electric field that provides the force and which has a radial component that prevents the electrons from straying out of the region between the first stage with emitting faces and the multiple emitting sections. Additionally, the gun includes a mechanism for producing a magnetic field to contain the electrons anywhere from the first stage with emitting faces or any emitting section and to the end of the cavity. The present invention pertains to a method for producing a flow of electrons. The method comprises the steps of moving at least a first electron in a first direction at one location. Next there is the step of striking a first area with the first electron. Then there is the step of producing additional electrons at the first area due to the first electron. Next there is the step of moving electrons from the first area to a second area and transmitting electrons through the second area and creating more electrons due to electrons from the first area striking the second area. These newly created electrons from the second area move in the first direction then strike the third area, fourth area, etc. Each area creates even more electrons in a repeating manner by moving in the first direction to multiple areas. This process is also repeated at different locations. The mechanism preferably includes a mechanism for accelerating the electrons inside the electrostatic cavity to allow the electron multiplication to continue. The mechanism preferably includes a control grid for bunching the electron flow. The present invention pertains to an electron gun. The electron gun comprises an electrostatic cavity having a first stage with electron emitting faces and multiple stages with electron emitting sections. The electron gun also comprises a mechanism for producing an electrostatic force which encompasses the electron emitting faces and the multiple electron emitting sections so electrons from the electron emitting faces and sections are directed from the emitting faces toward the emitting sections to contact the emitting sections and generate additional electrons on the opposite sides of the emitting sections and to further contact other emitting sections. The present invention pertains to a method for producing electrons. The method comprises the steps of moving at least a first electron in a first direction from a first location. Then, there is the step of striking a first area with the first electron. Next, there is the step of producing additional electrons at the first area due to the first electrons on the opposite side of the first area which was struck by the first electron. Next, there is the step of moving electrons from the first area to a second area. Then, there is the step of transmitting electrons to the second area and creating more electrons due to electrons from the first area striking the second area.
Abstract:
An electron source of an X-ray fluorescence analyser includes a photon source (201) and a photoelectric converter (203, 204) for converting photons into electrons. An electron multiplier (203, 204) multiplies the electrons, and a focusing element (206, 207) focuses them to a beam. A gastight casing (209) encloses the photoelectric converter and the electron multiplier (203, 204). An electron-transparent membrane (213) covers a first opening in the casing at a location where the focused electron beam is directed out of the casing.
Abstract:
Embodiments of the invention provide a novel, low-power X-ray tube and X-ray generating system. Embodiments of the invention use a multichannel electron generator as the electron source, thereby increasing reliability and decreasing power consumption of the X-ray tube. Unlike tubes using a conventional filament that must be heated by a current power source, embodiments of the invention require only a voltage power source, use very little current, and have no cooling requirements. The microchannel electron generator comprises one or more microchannel plates (MCPs), Each MCP comprises a honeycomb assembly of a plurality of annular components, which may be stacked to increase electron intensity. The multichannel electron generator used enables directional control of electron flow. In addition, the multichannel electron generator used is more robust than conventional filaments, making the resulting X-ray tube very shock and vibration resistant.
Abstract:
Generating and frequency tuning of modulated high current electron beams and a specific efficient, high current, frequency-tunable device for generating intense radio frequency (RF), microwave electromagnetic fields in a standard rectangular waveguide. The invention utilizes current multiplication of a seed electron beam, comprising an energetic electron beam to impact a thin foil surface with high electric field. The transmissive-electron-multiplier foils also mitigate both space charge expansion and improve beam propagation effects, by shorting of the radially directed electric field at the axial location of the foil(s). Foil thinness and intensity of the exit fields provide for a multiplication process occurring in a fraction of an RF period. Both self-excited oscillator and amplifier configurations are envisaged. Also included is both a self-excited microwave generator and an amplifier, using a temporally modulated laser to generate a seed electron beam that is amplified. Methods to tune the oscillator are described that allow tunability over a full waveguide band.