公开(公告)号：US07829863B2

公开(公告)日：2010-11-09

申请号：US11920420

申请日：2005-11-18

Applicant: Kenjiro Kimura ,  Kei Kobayashi ,  Hirofumi Yamada ,  Kazumi Matsushige

Inventor： Kenjiro Kimura ,  Kei Kobayashi ,  Hirofumi Yamada ,  Kazumi Matsushige

IPC: G21K1/08

CPC classification number: H01J37/3175 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/073 ,  H01J37/3174 ,  H01J2237/06333 ,  H01J2237/06358 ,  H01J2237/31779 ,  H01J2237/31794

Abstract: An electron beam irradiation device of the present invention includes: a projector 8 for generating a two-dimensional light pattern 13; a microchannel plate 11 for (i) generating an electron beam array based on the light pattern 13 having entered, (ii) amplifying the electron beam array, and (iii) emitting the electron beam array as an amplified electron beam array 14; and an electron beam lens section 12 for converging the amplified electron beam array 14. This electron beam irradiation device is capable of manufacturing a semiconductor device whose performance is improved through a finer processing by means of irradiation using an electron beam. Further, the electron beam irradiation device allows cost reduction, because the device allows collective irradiation using a two dimensional pattern.

Abstract translation: 本发明的电子束照射装置包括：用于产生二维光图案13的投影仪8; 微通道板11，用于（i）基于已经进入的光图案13产生电子束阵列，（ii）放大电子束阵列，和（iii）发射电子束阵列作为放大的电子束阵列14; 以及用于会聚放大的电子束阵列14的电子束透镜部分12.该电子束照射装置能够通过使用电子束的照射通过更精细的处理来制造其性能得到改善的半导体器件。 此外，电子束照射装置允许成本降低，因为该装置允许使用二维图案的集体照射。

公开(公告)号：US06784438B2

公开(公告)日：2004-08-31

申请号：US10688953

申请日：2003-10-21

Applicant: In-kyeong Yoo ,  Chang-wook Moon ,  Dong-wook Kim

Inventor： In-kyeong Yoo ,  Chang-wook Moon ,  Dong-wook Kim

IPC: H01J37073

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3175 ,  H01J2237/06358 ,  H01J2237/31781

Abstract: An electron projection lithography apparatus using secondary electrons includes a secondary electron emitter which is spaced apart from a substrate holder by a first predetermined interval and has a patterned mask formed on a surface thereof to face the substrate holder, a primary electron emitter which is spaced apart by a second predetermined interval from the secondary electron emitter in a direction opposite to the substrate holder and emits primary electrons to the secondary electron emitter, a second power supply which applies a second predetermined voltage between the substrate holder and the secondary electron emitter, a first power supply which applies a first predetermined voltage between the secondary electron emitter and the primary electron emitter, and a magnetic field generator which controls a path of secondary electrons emitted from the secondary electron emitter.

公开(公告)号：US20150060663A1

公开(公告)日：2015-03-05

申请号：US14474342

申请日：2014-09-02

Applicant: Heikki Johannes Sipila ,  Evgeny FEDKOV ,  Aleksandr SEREBRIAKOV

Inventor： Heikki Johannes Sipila ,  Evgeny FEDKOV ,  Aleksandr SEREBRIAKOV

IPC: G01N23/225 ,  H01J43/04 ,  H01J43/14 ,  G01N23/22

CPC classification number: G01N23/2252 ,  G01N23/2204 ,  G01N2223/076 ,  G01N2223/204 ,  H01J3/023 ,  H01J33/02 ,  H01J37/252 ,  H01J43/04 ,  H01J43/14 ,  H01J2237/06358 ,  H01J2237/2561

Abstract: An electron source of an X-ray fluorescence analyser includes a photon source (201) and a photoelectric converter (203, 204) for converting photons into electrons. An electron multiplier (203, 204) multiplies the electrons, and a focusing element (206, 207) focuses them to a beam. A gastight casing (209) encloses the photoelectric converter and the electron multiplier (203, 204). An electron-transparent membrane (213) covers a first opening in the casing at a location where the focused electron beam is directed out of the casing.

Abstract translation: X射线荧光分析仪的电子源包括用于将光子转换为电子的光子源（201）和光电转换器（203,204）。 电子倍增器（203,204）将电子相乘，并且聚焦元件（206,207）将它们聚焦到光束。 气体外壳（209）包围光电转换器和电子倍增器（203,204）。 电子透明膜（213）在聚焦电子束被引导出壳体的位置处覆盖壳体中的第一开口。

公开(公告)号：US20040084637A1

公开(公告)日：2004-05-06

申请号：US10688953

申请日：2003-10-21

Inventor： In-kyeong Yoo ,  Chang-wook Moon ,  Dong-wook Kim

IPC: H01J037/317

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3175 ,  H01J2237/06358 ,  H01J2237/31781

Abstract: An electron projection lithography apparatus using secondary electrons includes a secondary electron emitter which is spaced apart from a substrate holder by a first predetermined interval and has a patterned mask formed on a surface thereof to face the substrate holder, a primary electron emitter which is spaced apart by a second predetermined interval from the secondary electron emitter in a direction opposite to the substrate holder and emits primary electrons to the secondary electron emitter, a second power supply which applies a second predetermined voltage between the substrate holder and the secondary electron emitter, a first power supply which applies a first predetermined voltage between the secondary electron emitter and the primary electron emitter, and a magnetic field generator which controls a path of secondary electrons emitted from the secondary electron emitter.

Abstract translation: 使用二次电子的电子投影光刻装置包括：二次电子发射体，其与衬底保持器间隔开第一预定间隔，并且具有形成在其表面上的图案掩模，以面对衬底保持器;间隔开的一次电子发射体 在与所述衬底保持器相反的方向上从所述二次电子发射器开始第二预定间隔并向所述二次电子发射器发射一次电子;在所述衬底保持器和所述二次电子发射器之间施加第二预定电压的第二电源， 在二次电子发射体和一次电子发射体之间施加第一预定电压的电源，以及控制从二次电子发射体发射的二次电子路径的磁场发生器。

公开(公告)号：US08750458B1

公开(公告)日：2014-06-10

申请号：US13307559

申请日：2011-11-30

Applicant: Dongbing Wang ,  Dave Reynolds

Inventor： Dongbing Wang ,  Dave Reynolds

IPC: H01J35/00

CPC classification number: H01J35/06 ,  H01J3/023 ,  H01J2237/06358

Abstract: A cold electron number amplifier device can provide a greater number of electrons at lower electron emitter temperature. The cold electron number amplifier device can comprise an evacuated enclosure 11, a first electron emitter 12 attached to the evacuated enclosure 11, and an electrically conductive second electron emitter 13 also attached to the evacuated enclosure. The first electron emitter 12 can be configured to emit electrons 14 within the evacuated enclosure 11. The second electron emitter 13 can have a voltage V2 greater than a voltage V1 of the first electron emitter 12 (V2>V1). The second electron emitter 13 can be positioned to receive impinging electrons 14 from the first electron emitter 12. Electrons 14 from the first electron emitter 12 can impart energy to electrons in the second electron emitter 13 and cause the second electron emitter 13 to emit more electrons 15.

Abstract translation: 冷电子数放大器装置可以在较低的电子发射器温度下提供更多数量的电子。 冷电子数放大器装置可以包括抽真空的外壳11，附接到抽真空的外壳11的第一电子发射器12以及也连接到抽真空的外壳的导电的第二电子发射器13。 第一电子发射器12可以被配置为在真空的外壳11内发射电子14.第二电子发射器13可以具有大于第一电子发射器12的电压V1的电压V2（V2> V1）。 第二电子发射器13可以定位成从第一电子发射器12接收入射电子14.来自第一电子发射器12的电子14可以赋予第二电子发射体13中的电子能量，并使第二电子发射体13发射更多的电子 15。

公开(公告)号：US20090127473A1

公开(公告)日：2009-05-21

申请号：US11920420

申请日：2005-11-18

Applicant: Kenjiro Kimura ,  Kei Kobayashi ,  Hirofumi Yamada ,  Kazumi Matsushige

Inventor： Kenjiro Kimura ,  Kei Kobayashi ,  Hirofumi Yamada ,  Kazumi Matsushige

IPC: H01J3/14 ,  A61N5/00

CPC classification number: H01J37/3175 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/073 ,  H01J37/3174 ,  H01J2237/06333 ,  H01J2237/06358 ,  H01J2237/31779 ,  H01J2237/31794

Abstract: An electron beam irradiation device of the present invention includes: a projector 8 for generating a two-dimensional light pattern 13; a microchannel plate 11 for (i) generating an electron beam array based on the light pattern 13 having entered, (ii) amplifying the electron beam array, and (iii) emitting the electron beam array as an amplified electron beam array 14; and an electron beam lens section 12 for converging the amplified electron beam array 14. This electron beam irradiation device is capable of manufacturing a semiconductor device whose performance is improved through a finer processing by means of irradiation using an electron beam. Further, the electron beam irradiation device allows cost reduction, because the device allows collective irradiation using a two dimensional pattern.

Abstract translation: 本发明的电子束照射装置包括：用于产生二维光图案13的投影仪8; 微通道板11，用于（i）基于已经进入的光图案13产生电子束阵列，（ii）放大电子束阵列，和（iii）发射电子束阵列作为放大的电子束阵列14; 以及用于会聚放大电子束阵列14的电子束透镜部分12.该电子束照射装置能够通过使用电子束的照射通过更精细的处理来制造其性能得到改善的半导体器件。 此外，电子束照射装置允许成本降低，因为该装置允许使用二维图案的集体照射。