Abstract:
YIG oscillator apparatus comprises both an FET-based YIG oscillator circuit and a bipolar transistor-based YIG oscillator circuit inside a single magnetic structure. Both YIG spheres are disposed in the single air gap of the magnetic structure, which is defined by a pole piece which is tapered to an elongated pole surface which is only slightly larger than necessary to cover both YIG spheres. A band reject filter is included inside the housing for rejecting second harmonics of desired oscillation frequencies only.
Abstract:
YIG oscillator apparatus comprises both an FET-based YIG oscillator circuit and a bipolar transistor-based YIG oscillator circuit inside a single magnetic structure. Both YIG spheres are disposed in the single air gap of the magnetic structure, which is defined by a pole piece which is tapered to an elongated pole surface which is only slightly larger than necessary to cover both YIG spheres.
Abstract:
An electrical circuit includes a circuit element and a common mode rejection circuit element. The circuit element is configured to operate at a selected frequency within a variable frequency range and the common mode rejection circuit element is configured to reject a common mode current through the circuit element, wherein the common mode rejection circuit element is adjustable.
Abstract:
A voltage controlled tunable resonant circuit (100) has at least two resonant frequency ranges and reduced self modulation, and includes a resonant element (120), a variable reactance element (130), and a first voltage variable capacitor (VVC) (150). The variable reactance element (130) is coupled to the resonant element (120). The VVC (150) has two fixed capacitance values corresponding to two fixed capacitance bias voltage ranges, and is coupled to the resonant element (120) and the variable reactance element (130). The first VVC (150) is controlled by a first DC bias voltage (190) selected to be within one of the two fixed capacitance bias voltage ranges to establish one of the two resonant frequency ranges over which the voltage controlled tunable resonant circuit (100) is tuned by variation of the variable reactance element (130).
Abstract:
A very high frequency oscillator (4-22 GHz) including field effect transistor and first and second YIG sphere resonators whose reactant frequencies are displaced, which gives the oscillator a wide frequency range. The first YIG sphere is doubly coupled to the source and gate of the transistor, which gives the oscillator good linearity (.perspectiveto.10.sup.-3) over its frequency range. The second YIG sphere is coupled to the gate by a coupling wire which also couples to the first YIG sphere.
Abstract:
A dual-resonator YIG oscillator with a main YIG resonator and a stabilizing YIG resonator both suspended in a common magnetic field. The main YIG resonator takes on the high-Q factor aspects of the oscillator, while the stabilizing YIG resonator helps stabilize the operation of the main YIG resonator, and also allows the main YIG resonator operate at higher magnetic field strengths, achieving higher frequency operation. The stabilizing YIG resonator also enables the oscillator's active device to operate in a more linear, lower phase noise, regime. As compared to conventional YIG oscillators, the disclosed dual resonator YIG oscillator provides significant performance improvements, such as higher frequency operation, lower power consumption, higher tuning speed, and lower phase noise.
Abstract:
An electrical circuit includes a circuit element and a common mode rejection circuit element. The circuit element is configured to operate at a selected frequency within a variable frequency range and the common mode rejection circuit element is configured to reject a common mode current through the circuit element, wherein the common mode rejection circuit element is adjustable.
Abstract:
An oscillator of the "three-terminal" type, comprising for example a field effect transistor, having a narrow spectrum and electronically tunable within a very wide frequency band in spite of its narrow spectrum due to a resonator of the yttrium garnet ball type. The field effect transistor has its source connected to a dipole comprising an electronically variable reactance and its gate connected to a similar dipole. A feedback loop is also established between input and output circuits of the oscillator. Under the action of a single command, acting for example on a magnetic field, the reactances vary simultaneously. In one embodiment, a single yttrium garnet ball resonator has two conductive half loops inserted in the tuning dipole and coupling dipole of the oscillator.