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1.
公开(公告)号:US20230086874A1
公开(公告)日:2023-03-23
申请号:US17985254
申请日:2022-11-11
发明人: Coen HENDRIKSEN , Nicolaas Hendrika FRIEDERICHS , Alexander Z. VOSKOBOYNIKOV , Antonio VITTORIA , Vincenzo BUSICO , Roberta CIPULLO , Dmitry Y. MLADENTSEV , Bogdan A. GUZEEV , Dmitry V. UBORSKY
摘要: The invention relates to a metallocene complex according to formula (I), (I) wherein R1 and R2 are independently selected from H, an alkyl or an aryl group, wherein R3 is a C1-C10 alkyl group, wherein R′ is selected from H, an alkyl group, an aryl group and wherein different R′ substituents can be connected to form a ring structure and wherein B is a 1,2 phenylene bridging moiety, which can be optionally substituted, wherein Mt is selected from Ti, Zr and Hf, X is an anionic ligand, z is the number of X groups and equals the valence of Mt minus 2. The invention also relates to a catalyst comprising the reaction product of the metallocene complex and a cocatalyst. Further the invention relates to a (co)polymerisation process of olefinic monomers.
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公开(公告)号:US20230040334A1
公开(公告)日:2023-02-09
申请号:US17859214
申请日:2022-07-07
发明人: Hyunwoo KIM , Kazuki HARANO , Kiyoshi MURATA , Haruyoshi SATO , Younsoo KIM , Seungmin RYU , Atsushi YAMASHITA , Gyuhee PARK , Younjoung CHO
摘要: An yttrium compound and a method of manufacturing an integrated circuit device, the compound being represented by General Formula (I):
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公开(公告)号:US11555242B2
公开(公告)日:2023-01-17
申请号:US16460139
申请日:2019-07-02
发明人: Timo Hatanpaa , Jaakko Niinisto , Mikko Ritala , Markku Leskela , Suvi Haukka
摘要: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
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公开(公告)号:US11530280B2
公开(公告)日:2022-12-20
申请号:US16469616
申请日:2017-12-12
申请人: BOREALIS AG
发明人: Noureddine Ajellal , Anna Fait , Luigi Resconi , Vyatcheslav Izmer , Dmitry Kononovich , Alexander Voskoboynikov , Rafael Sablong , Timo Sciarone
IPC分类号: C07F17/00 , C08F4/6592 , C08F210/16 , C08F2/06
摘要: Catalyst system for producing ethylene copolymers in a high temperature solution process, the catalyst system comprising (i) a metallocene complex of formula (I), M is Hf or a mixture with Zr, provided that more than 50% by moles of the complex of Formula I has M=Hf, X is a sigma ligand, R are the same or different from each other and can be saturated linear or branched C1-C10 alkyl, C5-C10 aryl, C6-C20 alkylaryl or C6-C20 arylalkyl groups, which can optionally contain up to 2 heteroatoms or silicon atoms, R1 is a C6-C20-aryl, which can be unsubstituted or substituted by one or up to 5 linear or branched C1-C10 alkyl group(s), R2 is a saturated linear or cyclic C3-C20 alkyl group or a branched CR3R4R5 group, wherein R3 is hydrogen or an C1-C20 alkyl group and R4 and R5 are the same or are different and can be an C1-C20 alkyl group and (ii) a boron containing cocatalyst.
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公开(公告)号:US11459653B2
公开(公告)日:2022-10-04
申请号:US17294377
申请日:2019-11-13
申请人: DNF CO., LTD.
发明人: Myong Woon Kim , Sang Ick Lee , Jang Woo Seo , Sang Yong Jeon , Haeng Don Lim
IPC分类号: C23C16/18 , C23C16/455 , C23C16/56 , C07F17/00
摘要: The present invention provides a method for manufacturing a molybdenum-containing thin film and a molybdenum-containing thin film manufactured thereby. By using a molybdenum (0)-based hydrocarbon compound and a predetermined reaction gas, the method for manufacturing a molybdenum-containing thin film according to the present invention enables easy manufacturing of a highly pure thin film in a simple process.
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公开(公告)号:US20220275009A1
公开(公告)日:2022-09-01
申请号:US17609982
申请日:2019-05-10
申请人: Wacker Chemie AG
发明人: Elke Fritz-Langhals , Richard Weidner , Sven Werge
摘要: A mixture M includes at least one compound A, selected from (a1) a compound of the general formula (I) and/or (a2) a compound of the general formula (I′), at least one compound B, selected from (b1) a compound of the general formula (II) and/or (b2) a compound of the general formula (II′) and/or (b3) a compound of the general formula (II″), and at least one compound C, selected from cationic germanium(II) compounds of the general formula (III).
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公开(公告)号:US20220251706A1
公开(公告)日:2022-08-11
申请号:US17629975
申请日:2020-07-28
IPC分类号: C23C16/455 , C07F17/00 , C23C16/18 , C23C16/40
摘要: Provided are: bis(alkylcyclopentadienyl)tin or bis(alkyltetramethylcyclopentadienyl)tin having a high vapor pressure even at lower temperatures, typified by bis(ethylcyclopentadienyl)tin; a precursor for chemical vapor deposition containing any of the above-mentioned organotin compounds as a main component; and a method of producing a tin-containing thin film by an atomic layer deposition process using the precursor for chemical vapor deposition. A precursor for chemical vapor deposition containing bis(alkylcyclopentadienyl)tin or bis(alkyltetramethylcyclopentadienyl)tin represented by the following Formula (1) as a main component: (In Formula (1), R1 and R2 each independently represent hydrogen or an alkyl group having 6 or less carbon atoms, and R3 and R4 each independently represent an alkyl group having 6 or less carbon atoms.)
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公开(公告)号:US11384180B2
公开(公告)日:2022-07-12
申请号:US16464871
申请日:2018-10-01
申请人: LG Chem, Ltd.
发明人: Taejin Kim , Seong Min Chae , Kyung Seop Noh , Sang Jin Jeon , In Yong Jung
IPC分类号: C08F110/06 , C08F4/643 , C08F4/659 , C08F4/6592 , C07F17/00 , A47L13/16 , D04H1/4291 , D04H3/007
摘要: The present invention provides a homopolypropylene having high strength and a low content of low molecular weights together with excellent processability, and a preparation method thereof.
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9.
公开(公告)号:US20220144983A1
公开(公告)日:2022-05-12
申请号:US17438174
申请日:2020-06-11
申请人: LG Chem, Ltd.
发明人: Sangeun An , Insun Lee , Seok Hwan Kim , Byung Seok Kim , Daesik Hong , Sanghoon Lee
IPC分类号: C08F110/06 , C07F17/00
摘要: Provided are a hybrid supported metallocene catalyst comprising one or more first metallocene compounds selected from compounds represented by the following Chemical Formula 1; one or more second metallocene compounds selected from compounds represented by the following Chemical Formula 2, and showing high activity in propylene polymerization and being usefully applied to the preparation of a polypropylene having high melt strength by introducing long chain branches into the polypropylene molecule, and a method of preparing a polypropylene using the same wherein all the variables are described herein.
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公开(公告)号:US20220135715A1
公开(公告)日:2022-05-05
申请号:US17435136
申请日:2020-12-04
申请人: LG Chem, Ltd.
发明人: Seong Min Chae , Hyunsup Lee , Kyung Seop Noh , Heekwang Park , Jihwa Ye
IPC分类号: C08F110/06 , C07F17/00 , D01F6/06 , D01D5/08
摘要: The present disclosure relates to a polypropylene resin exhibiting excellent processability and capable of producing fine fibers, a polypropylene fiber including the same, and a method for preparing the same.
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