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    CMOS image sensor and method for manufacturing the same
    91.
    发明授权
    CMOS image sensor and method for manufacturing the same 失效
    CMOS图像传感器及其制造方法

    公开(公告)号：US07037748B2

    公开(公告)日：2006-05-02

    申请号：US10747196

    申请日：2003-12-30

    Applicant: Chang Hun Han

    Inventor： Chang Hun Han

    IPC: H01L21/00

    CPC classification number: H01L27/14643 ,  H01L27/14687

    Abstract: A CMOS image sensor and a manufacturing method thereof, wherein the gates of several transistors of the CMOS image sensor are formed in an active region defined by an isolation region for a unit pixel of the CMOS image sensor, and a passivation layer composed of insulating layer is formed on the semiconductor substrate. Impurities are ion-implanted into the active region to form one or more diffusion regions of a photo diode of the CMOS image sensor, wherein the passivation layer prevents a boundary portion of the active region from being ion-implanted. Thus, damages by ion implantation at the boundary portion between the diffusion region for the photo diode and the isolation region are prevented, and the dark current of the CMOS image sensor is reduced.

    Abstract translation: 一种CMOS图像传感器及其制造方法，其中CMOS图像传感器的多个晶体管的栅极形成在由CMOS图像传感器的单位像素的隔离区域限定的有源区域中，以及由绝缘层 形成在半导体基板上。 杂质被离子注入有源区域以形成CMOS图像传感器的光电二极管的一个或多个扩散区域，其中钝化层防止有源区域的边界部分被离子注入。 因此，防止了在光电二极管的扩散区域与隔离区域之间的边界部分处的离子注入的损坏，并且降低了CMOS图像传感器的暗电流。

    Method for fabricating AND-type flash memory cell
    92.
    发明授权
    Method for fabricating AND-type flash memory cell 失效
    制造AND型闪存单元的方法

    公开(公告)号：US07008856B2

    公开(公告)日：2006-03-07

    申请号：US10750250

    申请日：2003-12-31

    Applicant: Chang Hun Han ,  Bong Kil Kim

    Inventor： Chang Hun Han ,  Bong Kil Kim

    IPC: H01L21/76

    CPC classification number: H01L27/11568 ,  H01L27/115 ,  H01L27/11521 ,  Y10S438/95

    Abstract: A flash memory cell and fabrication method thereof are disclosed. An example fabrication method deposits a pad oxide layer and a pad nitride layer on a semiconductor substrate, patterns the pad nitride layer, implants ions into the substrate to form an ion implant region, forms spacers on sidewalls of the pad nitride layer pattern, removes some part of the pad oxide layer and the top portion of the substrate through an etching process using the spacers as a mask to form a trench that divides the ion implant region into two parts. The example fabrication method also forms a gap filling insulating layer over the resulting substrate, and forms a trench isolation layer and junction regions simultaneously by removing the spacers, the pad nitride layer pattern, the pad oxide layer, and the top portion of the gap filling insulating layer.

    Abstract translation: 公开了闪存单元及其制造方法。 示例性制造方法将衬垫氧化物层和衬垫氮化物层沉积在半导体衬底上，将衬垫氮化物层，衬底离子注入衬底以形成离子注入区域，在衬垫氮化物层图案的侧壁上形成间隔物，去除一些 通过使用间隔物作为掩模的蚀刻工艺，形成将离子注入区域分成两部分的沟槽的衬垫氧化物层的一部分和衬底的顶部。 示例性制造方法还在所得到的衬底上形成间隙填充绝缘层，并且通过去除间隔物，衬垫氮化物层图案，衬垫氧化物层和间隙填充物的顶部部分同时形成沟槽隔离层和接合区域 绝缘层。

    Transparent, rubber-modified styrene copolymer
    93.
    发明授权
    Transparent, rubber-modified styrene copolymer 有权
    透明橡胶改性苯乙烯共聚物

    公开(公告)号：US06849690B2

    公开(公告)日：2005-02-01

    申请号：US10450759

    申请日：2001-12-12

    Applicant: Chang-Hun Han ,  Oh-Jin Kwon ,  Dae-Woo Lee

    Inventor： Chang-Hun Han ,  Oh-Jin Kwon ,  Dae-Woo Lee

    IPC: C08F257/02 ,  C08F279/06 ,  C08F285/00 ,  C08F287/00 ,  C08L53/02 ,  C08L51/09

    CPC classification number: C08F285/00 ,  C08F257/02 ,  C08F279/06 ,  C08F287/00

    Abstract: The present invention relates to a method of preparing rubber-modified styrene copolymer resin with excellent transparency and impact resistance, specifically to a method of preparing transparent resin of rubber-modified styrene copolymer comprising graft-copolymerizing styrene monomer and (meth)acrylate monomer in the presence of block or random styrene-butadiene copolymer which has 30-50% of styrene skeleton content and 20-40 cp of 5% toluene solution viscosity at 25 iÉ. According to the method of the present invention, the transparent resin containing the rubber particles of a double structure comprising onion and core-shell structure can provide transparent resin of rubber-modified styrene copolymer resin with excellent transparency and impact resistance as well as good gloss.

    Abstract translation: 本发明涉及一种制备具有优异透明性和耐冲击性的橡胶改性苯乙烯共聚物树脂的方法，具体涉及一种制备橡胶改性苯乙烯共聚物的透明树脂的方法，其包括在苯乙烯单体和（甲基）丙烯酸酯单体中的接枝共聚物 存在嵌段或无规苯乙烯 - 丁二烯共聚物，其具有30-50％的苯乙烯骨架含量和20-40cp的25％的5％甲苯溶液粘度。 根据本发明的方法，含有包含洋葱和核 - 壳结构的双重结构的橡胶颗粒的透明树脂可以提供具有优异透明性和耐冲击性以及良好光泽的橡胶改性苯乙烯共聚物树脂的透明树脂。

    Method of manufacturing SONOS flash memory device
    94.
    发明授权
    Method of manufacturing SONOS flash memory device 失效
    制造SONOS闪存设备的方法

    公开(公告)号：US06849514B2

    公开(公告)日：2005-02-01

    申请号：US10751190

    申请日：2003-12-30

    Applicant: Chang Hun Han

    Inventor： Chang Hun Han

    IPC: H01L21/8247 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/44 ,  H01L21/4763

    CPC classification number: H01L21/28282

    Abstract: A method of manufacturing a SONOS flash memory device is disclosed. The disclosed method comprises the steps of forming a lower oxide layer, a tunnel nitride layer, a sacrificial oxide layer, and an insulating layer for a hard mask in sequence on a semiconductor substrate; removing a portion of the insulating layer by an etching process; forming spacers on sidewalls of the insulating layer etched; removing some part of the sacrificial oxide layer and the tunnel nitride layer by an etching process using the insulating layer and the spacers as a mask; removing the insulating layer, the spacers, and the sacrificial oxide layer; removing a portion of the lower oxide layer by an etching process using the tunnel nitride layer etched as a mask; depositing an upper oxide layer and a polysilicon layer in sequence over the resulting structure; and forming a gate having two separate tunnel nitride layer parts by removing some parts of the polysilicon layer, the upper oxide layer, and the tunnel nitride layer in sequence by an etching process. By separating the tunnel nitride layer into two parts, movement of electrons captured in the tunnel nitride layer can be completely prevented. Therefore, the present invention can obviate device malfunction, thereby ensuring device characteristics and reliability.

    Abstract translation: 公开了一种制造SONOS闪速存储器件的方法。 所公开的方法包括以下步骤：在半导体衬底上依次形成用于硬掩模的低氧化物层，隧道氮化物层，牺牲氧化物层和绝缘层; 通过蚀刻工艺去除绝缘层的一部分; 在绝缘层的侧壁上形成间隔物; 通过使用绝缘层和间隔物作为掩模的蚀刻工艺去除牺牲氧化物层和隧道氮化物层的一部分; 去除绝缘层，间隔物和牺牲氧化物层; 使用蚀刻作为掩模的隧道氮化物层，通过蚀刻工艺去除一部分低氧化物层; 在所得结构上依次沉积上氧化物层和多晶硅层; 以及通过蚀刻工艺依次去除多晶硅层，上氧化物层和隧道氮化物层的一些部分，形成具有两个单独的隧道氮化物层部分的栅极。 通过将隧道氮化物层分成两部分，可以完全防止在隧道氮化物层中捕获的电子的移动。 因此，本发明可以避免设备故障，从而确保设备特性和可靠性。

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