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    Method of arbitration of memory request for computer graphics system
    91.
    发明授权
    Method of arbitration of memory request for computer graphics system 有权
    计算机图形系统存储器请求仲裁方法

    公开(公告)号：US06778175B2

    公开(公告)日：2004-08-17

    申请号：US10067386

    申请日：2002-02-05

    Applicant: Kuo-Wei Yeh ,  Yuan-Chin Liu

    Inventor： Kuo-Wei Yeh ,  Yuan-Chin Liu

    IPC: G06F1318

    CPC classification number: G06T1/60 ,  G06F13/161

    Abstract: The present invention, a method of the arbitration of memory request for a computer graphics system, consecutively services the requests having the same type in the same period, thereby increasing the chance of page-hit. In this arbitration method, the length of a fixed period is defined by the 3-D graphics engine in accordance with the amount of memory cycles or the amount of the requests, and is used for controlling the amount of the requests of each type. The length of the period can be the cycles of servicing a block comprising a tile or several tiles. Alternatively, instead of defining a fixed length of the period, the 3-D graphics engine can choose another arbitration method of the present invention. Another arbitration method of the present invention is to mark a message at the end of the drawing block, so that the memory control can decide to rotate the service order to the next type of requests according to the block-end message received. The present invention groups and services the memory requests according to the property of 3-D pipelining. Therefore, the page-miss and read-write turnaround penalties can be reduced, so that data can be accessed more efficiently.

    Abstract translation: 本发明的一种对计算机图形系统的存储器请求进行仲裁的方法在同一时期内连续地对具有相同类型的请求进行服务，从而增加页命中的机会。 在该仲裁方法中，固定周期的长度由3-D图形引擎根据存储周期量或请求量定义，并用于控制每种类型的请求量。 周期的长度可以是对包括瓦片或几个瓦片的块进行维修的周期。 或者，代替定义周期的固定长度，3-D图形引擎可以选择本发明的另一个仲裁方法。 本发明的另一个仲裁方法是在绘图块的末尾标记消息，使得存储器控制可以根据收到的块结束消息决定将服务顺序旋转到下一种类型的请求。 本发明根据3-D流水线的性质对存储器请求进行分组和服务。 因此，可以减少页面错误和读写周转处罚，从而可以更有效地访问数据。

    PDA cradle
    92.
    外观设计
    PDA cradle 失效
    PDA摇篮

    公开(公告)号：USD469097S1

    公开(公告)日：2003-01-21

    申请号：US29159035

    申请日：2002-04-16

    Applicant: Wei-Chin Liu

    Designer： Wei-Chin Liu

    Method of fabricating silicon nitride read only memory
    93.
    发明授权
    Method of fabricating silicon nitride read only memory 有权
    制造氮化硅只读存储器的方法

    公开(公告)号：US06468864B1

    公开(公告)日：2002-10-22

    申请号：US09927645

    申请日：2001-08-10

    Applicant: Jiann-Long Sung ,  Chen-Chin Liu ,  Chia-Hsing Chen

    Inventor： Jiann-Long Sung ,  Chen-Chin Liu ,  Chia-Hsing Chen

    IPC: H01L21331

    CPC classification number: H01L29/66833 ,  H01L29/792

    Abstract: A method of fabricating silicon nitride read only memory. A trapping layer is formed on a substrate. Next, a patterned photoresist layer is formed, and the substrate region at the lower section of the trapping layer masked by the photoresist layer is defined as a channel region. The substrate region at the lower section of the trapping layer and no masked by the photoresist layer is defined as a source/drain region. Next, a pocket ion implantation is performed while using the photoresist layer as amask, and a first dopant is implanted into the source/drain region of the substrate. The photoresist layer is used as a mask and the source/drain ions are implanted. A second dopant is implanted into the source/drain region of the substrate. After that, the photoresist layer is removed. Next, the trapping layer is used as a mask, and a thermal process is performed so that the substrate surface of the source/drain region forms a buried source/drain oxide layer, while at the same time, the second dopant at the lower section of the buried source/drain oxide layer forms a buried source/drain. The first dopant forms the pocket doping region at the edge of the channel region of the buried source/drain periphery as a result of thermal diffusion. Finally, a conductive gate is formed on the substrate.

    Abstract translation: 一种制造氮化硅只读存储器的方法。 在基板上形成捕获层。 接下来，形成图案化的光致抗蚀剂层，并且由光致抗蚀剂层掩蔽的捕获层的下部的基板区域被定义为沟道区域。 捕获层的下部的基板区域被光致抗蚀剂层掩蔽，被定义为源极/漏极区域。 接下来，使用光致抗蚀剂层作为掩模进行袋式离子注入，并且将第一掺杂剂注入到衬底的源极/漏极区域中。 光致抗蚀剂层用作掩模，并且注入源/漏离子。 将第二掺杂剂注入到衬底的源极/漏极区域中。 之后，去除光致抗蚀剂层。 接下来，将捕获层用作掩模，并且进行热处理，使得源极/漏极区域的衬底表面形成掩埋源极/漏极氧化物层，同时在下部的第二掺杂剂 的掩埋源极/漏极氧化物层形成埋入的源极/漏极。 作为热扩散的结果，第一掺杂剂在掩埋源极/漏极周边的沟道区域的边缘处形成腔体掺杂区域。 最后，在基板上形成导电栅极。

    Iron-rich magnetostrictive element having optimized bias-field-dependent resonant frequency characteristic
    96.
    发明授权
    Iron-rich magnetostrictive element having optimized bias-field-dependent resonant frequency characteristic 失效
    富铁磁致伸缩元件具有优化的偏磁场相关谐振频率特性

    公开(公告)号：US6057766A

    公开(公告)日：2000-05-02

    申请号：US165566

    申请日：1998-10-02

    Applicant: Robert C. O'Handley ,  Wing K. Ho ,  Ming-Ren Lian ,  Nen-Chin Liu

    Inventor： Robert C. O'Handley ,  Wing K. Ho ,  Ming-Ren Lian ,  Nen-Chin Liu

    IPC: C22C45/02 ,  G08B13/24 ,  H01F1/153 ,  H01L41/20 ,  G08B13/14

    CPC classification number: H01L41/20 ,  G08B13/2408 ,  G08B13/244 ,  G08B13/2442 ,  H01F1/15308 ,  H01F1/15341

    Abstract: A magnetostrictive element for use in a magneto-mechanical marker has a resonant frequency characteristic that is at a minimum at a bias field level corresponding to the operating point of the magnetomechanical marker. The magnetostrictive element has a magnetomechanical coupling factor k in the range 0.28 to 0.4 at the operating point. The magnetostrictive element is formed by applying cross-field annealing to an iron-rich amorphous metal alloy ribbon (45 to 82 percent iron) which includes a total of from 2 to 17 percent of one or more of Mn, Mo, Nb, Cr, Hf, Zr, Ta, V. Cobalt, nickel, boron, silicon and/or carbon may also be included. The metal alloy may include one early transition element selected from the group consisting of Zr, Hf and Ta, and also a second early transition element selected from the group consisting of Mn, Mo, Nb, Cr, and V.

    Abstract translation: 用于磁 - 机械标记的磁致伸缩元件具有在对应于磁力机械标记的工作点的偏置磁场水平处最小的共振频率特性。 磁致伸缩元件在工作点具有在0.28至0.4范围内的磁机械耦合系数k。 磁致伸缩元件是通过对富含铁的非晶金属合金带（45％至82％的铁）进行交叉场退火而形成的，其包括总共2至17％的一种或多种Mn，Mo，Nb，Cr， Hf，Zr，Ta，V.还可以包括钴，镍，硼，硅和/或碳。 金属合金可以包括选自Zr，Hf和Ta的一种早期过渡元素，以及选自由Mn，Mo，Nb，Cr和V组成的组的第二早期过渡元素。

    Self-biased magnetostrictive element for magnetomechanical electronic article surveillance systems
    100.
    发明授权
    Self-biased magnetostrictive element for magnetomechanical electronic article surveillance systems 失效
    用于磁机械电子物品监控系统的自偏磁致伸缩元件

    公开(公告)号：US5565849A

    公开(公告)日：1996-10-15

    申请号：US392070

    申请日：1995-02-22

    Applicant: Wing Ho ,  Nen-chin Liu ,  Robert O'Handley

    Inventor： Wing Ho ,  Nen-chin Liu ,  Robert O'Handley

    IPC: G01V3/00 ,  G01V15/00 ,  G08B13/24 ,  H01F1/153 ,  H01L41/20 ,  G08B13/14

    CPC classification number: G08B13/2408 ,  G08B13/2437 ,  G08B13/244 ,  G08B13/2442 ,  H01F1/15316 ,  H01F1/15341 ,  H01L41/20

    Abstract: A self-biasing magnetostrictive element for a magnetomechanical EAS marker is formed by first annealing a ribbon of ferromagnetic material in the presence of a magnetic field applied in a transverse direction relative to the ribbon's longitudinal axis, and then annealing the ribbon a second time in the presence of a magnetic field applied in the direction of the longitudinal axis. The twice-annealed ribbon exhibits remanent magnetization along the longitudinal axis and has plural magnetic domains situated along the longitudinal axis. The orientation of magnetization in each domain is canted by .+-..theta..degree.

    Abstract translation: 磁力机械EAS标记的自偏磁致伸缩元件通过在相对于色带的纵向轴线在横向上施加的磁场的存在下首先退火铁磁材料带而形成，然后在第 存在沿纵轴方向施加的磁场。 两次退火的带表现出沿着纵轴的剩余磁化强度，并具有沿着纵向轴线设置的多个磁畴。 每个区域的磁化方向从带状轴向偏离+/-θ°<90°，斜面方向从域到域交替。

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