公开(公告)号：US06858371B2

公开(公告)日：2005-02-22

申请号：US10080335

申请日：2002-02-21

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Cha Won Koh ,  Ki Soo Shin

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Cha Won Koh ,  Ki Soo Shin

IPC: G03F7/033 ,  C08F210/04 ,  C08F220/10 ,  C08F222/40 ,  C08F232/08 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  C08F26/06

CPC classification number: G03F7/0046 ,  G03F7/0395 ,  Y10S430/106 ,  Y10S430/108

Abstract: Photoresist monomers, photoresist polymers prepared thereof, and photoresist compositions using the polymer are disclosed. More specifically, photoresist polymers comprising maleimide monomer represented by Formula 1, and a composition comprising the polymer thereof are disclosed. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and can be developed in an aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, and it is suitable for a process using ultraviolet light source such as VUV (157 nm) wherein, X1, X2, R1, R2 and R3 are defined in the specification.

Abstract translation: 公开了光致抗蚀剂单体，其制备的光致抗蚀剂聚合物和使用该聚合物的光致抗蚀剂组合物。 更具体地，公开了包含由式1表示的马来酰亚胺单体的光致抗蚀剂聚合物和包含其聚合物的组合物。 光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且可以在四甲基氢氧化铵（TMAH）水溶液中显影。 由于组合物在193nm和157nm波长处具有低吸光度，并且适用于使用紫外光源如VUV（157nm）的方法，其中X1，X2，R1，R2和R3在本说明书中定义。

公开(公告)号：US06770414B2

公开(公告)日：2004-08-03

申请号：US09878803

申请日：2001-06-11

Applicant: Min Ho Jung ,  Sung Eun Hong ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

Inventor： Min Ho Jung ,  Sung Eun Hong ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

IPC: G03F700

CPC classification number: G03F7/0395 ,  C07J9/00 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  Y10T428/24802

Abstract: The present invention provides an additive for a photoresist composition for a resist flow process. A compound of following Formula 1 having low glass transition temperature is added to a photoresist composition containing a polymer which is not suitable for the resist flow process due to its high glass transition temperature, thus improving a flow property of the photoresist composition. As a result, the photoresist composition comprising an additive of Formula 1 can be used for the resist flow process. wherein, A, B, R and R′ are as defined in the specification of the invention.

Abstract translation: 本发明提供了用于抗蚀剂流动方法的光致抗蚀剂组合物的添加剂。 将具有低玻璃化转变温度的下述式1化合物加入含有聚合物的光致抗蚀剂组合物中，该聚合物由于其玻璃化转变温度高而不适于抗蚀剂流动过程，从而改善光致抗蚀剂组合物的流动性能。 结果，包含式1的添加剂的光致抗蚀剂组合物可用于抗蚀剂流动过程。其中A，B，R和R'如本发明的说明书中所定义。

公开(公告)号：US06753128B2

公开(公告)日：2004-06-22

申请号：US10272072

申请日：2002-10-16

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

IPC: G03F7038

CPC classification number: G03F7/0045 ,  G03F7/0395

Abstract: Photoresist additives for preventing the acid generated in the exposed area during the course of a photolithography process from being diffused to the unexposed area, photoresist compositions containing the same, and a process for forming a photoresist pattern using the same. Photoresist compositions comprising the disclosed additive can prevent acid diffusion effectively even if the additive is used in low concentrations, thereby improving LER, resulting in excellent profiles and lowering optimum irradiation energies. wherein, R1, R2, R3, R4 and k are as defined herein.

Abstract translation: 用于防止在光刻工艺过程中在曝光区域产生的酸扩散到未曝光区域的光刻胶添加剂，含有该光致抗蚀剂组合物的光致抗蚀剂组合物和使用其形成光致抗蚀剂图案的方法。 包含所公开的添加剂的光致抗蚀剂组合物即使以低浓度使用添加剂也能有效地防止酸扩散，从而改善LER，导致优异的轮廓并降低最佳照射能量。其中R1，R2，R3，R4和k如本文所定义 。

公开(公告)号：US06749990B2

公开(公告)日：2004-06-15

申请号：US10054095

申请日：2002-01-22

Applicant: Jae Chang Jung ,  Geun Su Lee ,  Ki Soo Shin

Inventor： Jae Chang Jung ,  Geun Su Lee ,  Ki Soo Shin

IPC: G03F7004

CPC classification number: G03F7/0395 ,  G03F7/0046 ,  Y10S430/108

Abstract: A chemical amplification photoresist monomer, a photoresist polymer prepared thereof, and a photoresist composition using the polymer. More specifically, a chemical amplification photoresist polymer comprising a fluorine-containing monomer represented by Chemical Formula 1, and a composition comprising the polymer. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, it is very useful for forming ultramicro pattern in the process using a light source of far ultraviolet, especially of VUV (157 nm). In the Formula, R1, R2, R3 and R4 is defined in the specification.

Abstract translation: 化学扩增光致抗蚀剂单体，其制备的光致抗蚀剂聚合物和使用该聚合物的光致抗蚀剂组合物。 更具体地说，包括由化学式1表示的含氟单体的化学扩增光致抗蚀剂聚合物和包含该聚合物的组合物。光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且可在四甲基氢氧化铵（TMAH） 解。 由于组合物在193nm和157nm波长处具有低吸光度，因此在使用远紫外光源（尤其是VUV（157nm））的方法中形成超微图案非常有用。在式中，R1，R2， R3和R4在本说明书中定义。

公开(公告)号：US06653047B2

公开(公告)日：2003-11-25

申请号：US10107650

申请日：2002-03-27

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

IPC: G03F7004

CPC classification number: G03F7/0395 ,  G03F7/0046 ,  Y10S430/106

Abstract: Photoresist monomers, photoresist polymers prepared therefrom, and photoresist compositions using the polymers are disclosed. More specifically, photoresist polymers comprising a photoresist monomer containing fluorine-substituted benzylcarboxylate represented by Formula 1, and a composition comprising the polymer are disclosed. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and can be developed in aqueous tetramethylammonium hydroxide (TMAH) solution. And, the present photoresist composition is suitable to form a fine pattern using deep ultraviolet light source such as VUV (157 nm), since the composition has low light absorbance at 193 nm and 157 nm wavelength. wherein, X1, X2, R1, l and m are defined in the specification.

Abstract translation: 公开了光阻单体，由其制备的光致抗蚀剂聚合物和使用该聚合物的光致抗蚀剂组合物。 更具体地，公开了包含由式1表示的含氟取代的苄基羧酸酯的光致抗蚀剂单体的光致抗蚀剂聚合物和包含该聚合物的组合物。 光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且可以在四甲基氢氧化铵（TMAH）水溶液中显影。 并且，本发明的光致抗蚀剂组合物适合于使用深紫外光源如VUV（157nm）形成精细图案，因为该组合物在193nm和157nm波长处具有低吸光度。其中X1，X2，R1，l 和m在说明书中定义。

公开(公告)号：US06627379B2

公开(公告)日：2003-09-30

申请号：US09837394

申请日：2001-04-18

Applicant: Jin Soo Kim ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

Inventor： Jin Soo Kim ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: G03F7/40 ,  G03F7/0045 ,  G03F7/039 ,  Y10S430/106 ,  Y10S430/111

Abstract: Photoresist compositions which are useful in a resist flow process are disclosed. A process for forming a contact hole pattern using the disclosed photoresist compositions is also disclosed. The disclosed photoresist resin includes a mixture of two or more polymers. Preferably, a mixture of a first copolymer and a second copolymer are cross-linked, and thus it prevents a contact hole from being collapsed due to over flow which is typically observed during a conventional resist flow process. In addition, the disclosed photoresist compositions allow formation of uniform sized patterns.

公开(公告)号：US06613493B2

公开(公告)日：2003-09-02

申请号：US10037515

申请日：2002-01-04

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Ki Soo Shin

IPC: G03F7004

CPC classification number: G03F7/0392 ,  Y10S430/106

Abstract: Photoresist polymers having nitro groups (—NO2), and photoresist compositions containing the same. A photoresist pattern having excellent endurance, etching resistance, reproducibility and resolution can be formed by the use of the photoresist copolymer comprising polymerization repeating units represented by Chemical Formula 1a or 1b: wherein, R1, a, b, c, d, e, f, g and h is defined in the specification. Having nitro groups in the polymer, the photoresist polymer results in a low absorbance in the range of 157 nm wavelength, so that it is extremely useful for a photolithography process using, in particular, VUV light source.

Abstract translation: 具有硝基（-NO 2）的光致抗蚀剂聚合物和含有它们的光致抗蚀剂组合物。 可以通过使用由化学式1a或1b表示的聚合重复单元的光致抗蚀剂共聚物形成具有优异的耐久性，耐蚀刻性，再现性和分辨率的光致抗蚀剂图案：其中，R1，a，b，c，d，e，f g和h在本说明书中定义。在聚合物中具有硝基，光致抗蚀剂聚合物在157nm波长范围内导致低吸光度，因此其对于使用特别是VUV光的光刻工艺非常有用 资源。

公开(公告)号：US06602650B2

公开(公告)日：2003-08-05

申请号：US10099295

申请日：2002-03-13

Applicant: Sung-eun Hong ,  Min-ho Jung ,  Jae-chang Jung ,  Geun-su Lee ,  Ki-ho Baik

Inventor： Sung-eun Hong ,  Min-ho Jung ,  Jae-chang Jung ,  Geun-su Lee ,  Ki-ho Baik

IPC: G03C176

CPC classification number: C08F220/36 ,  C07C251/54 ,  C08F220/40 ,  G03F7/091 ,  Y10S430/111 ,  C08F2220/281 ,  C08F216/38

Abstract: A compound of Formula 10, an organic anti-reflective polymer having the structure of Formula 1 synthesized from the compound of Formula 1 and a preparation method thereof. An anti-reflective coating composition including the above organic anti-reflective polymer, as well as a preparation method of an anti-reflective coating. The anti-reflective coating comprising the disclosed polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the changes in the thickness of the photoresist, prevents back reflection and also solves the problem of CD alteration cause by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices and an increase of the production yields. Further, it is also possible to control the k value

Abstract translation: 式10的化合物，由式1化合物合成的具有结构式1的有机抗反射聚合物及其制备方法。 包含上述有机抗反射聚合物的抗反射涂料组合物以及抗反射涂层的制备方法。 包含所公开的聚合物的抗反射涂层消除了由晶片上的下层的光学性质引起的驻波以及光致抗蚀剂的厚度变化，防止背反射，并且还解决了衍射和 来自这种较低层的反射光。 这样的优点使得能够形成适合于64M，256M，1G，4G和16G DRAM半导体器件的稳定的超细格局，并且提高了产量。 此外，还可以控制k值

公开(公告)号：US06599678B2

公开(公告)日：2003-07-29

申请号：US09888829

申请日：2001-06-25

Applicant: Sung-eun Hong ,  Min-ho Jung ,  Jae-chang Jung ,  Geun-su Lee ,  Ki-ho Baik

Inventor： Sung-eun Hong ,  Min-ho Jung ,  Jae-chang Jung ,  Geun-su Lee ,  Ki-ho Baik

IPC: G03C176

CPC classification number: G03F7/091 ,  C08F220/36 ,  Y10S430/106 ,  Y10S430/111

Abstract: An organic anti-reflective polymer having the following Formula 1, its preparation method, an anti-reflective coating composition comprising the said organic anti-reflective polymer and a preparation method of an anti-reflective coating made therefrom. The anti-reflective coating comprising the disclosed polymer eliminates standing waves caused by the optical properties of lower layers on the wafer and by the thickness changes of the photoresist, prevents back reflection and CD alteration caused by the diffracted and reflected light from such lower layers. Such advantages enable the formation of stable ultrafine patterns suitable for 64M, 256M, 1G, 4G, and 16G DRAM semiconductor devices and improve the production yields. Further, it is also possible to control the k value and the increased hydrophobicity facilitates EBR (Edge Bead Removal).

公开(公告)号：US06569599B2

公开(公告)日：2003-05-27

申请号：US09852371

申请日：2001-05-10

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: G03F7/0758 ,  G03F7/0045 ,  G03F7/095 ,  Y10S430/106 ,  Y10S430/111

Abstract: The present invention provides photoresist polymers, processes for producing the same, photoresist compositions comprising such polymers, and processes for producing a photoresist pattern using such photoresist compositions. In particular, photoresist polymers of the present invention comprise a moiety of the Formula: where R1, R2, R3 and R4 are those defined herein. Photoresist polymers of the present invention have a relatively high etching resistance, and therefore are useful in thin resist processes and bilayer photoresist processes. Moreover, photoresist polymers of the present invention have a high contrast ratio between the exposed region and the non-exposed region.

Abstract translation: 本发明提供光致抗蚀剂聚合物，其制备方法，包含这种聚合物的光致抗蚀剂组合物，以及使用这种光致抗蚀剂组合物制备光刻胶图案的方法。 特别地，本发明的光致抗蚀剂聚合物包含下式的部分：其中R 1，R 2，R 3和R 4是本文定义的那些。 本发明的光致抗蚀剂聚合物具有相对高的抗蚀刻性，因此可用于薄抗蚀剂工艺和双层光刻胶工艺。 此外，本发明的光致抗蚀剂聚合物在曝光区域和非曝光区域之间具有高对比度。