公开(公告)号：US11639468B2

公开(公告)日：2023-05-02

申请号：US17712505

申请日：2022-04-04

Applicant: Nanosys, Inc.

Inventor： Benjamin Newmeyer ,  Christian Ippen ,  Ruiqing Ma ,  Diego Barrera ,  Jesse Robert Manders

IPC: C09K11/88 ,  C09K11/02 ,  C09K11/08 ,  C09K11/61 ,  B82Y40/00

Abstract: This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures with fluoride passivation. The disclosure also provides methods of preparing nanostructures with fluoride and amine passivation. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided.

公开(公告)号：US11637256B2

公开(公告)日：2023-04-25

申请号：US16546486

申请日：2019-08-21

Applicant: NANOSYS, Inc.

Inventor： Christian Ippen ,  Daekyoung Kim ,  Emma Rose Dohner ,  Jesse Manders ,  David Olmeijer ,  Ruiqing Ma

IPC: H01L51/50 ,  B82Y40/00 ,  C09K11/06 ,  H01L51/00

Abstract: The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures comprising charge-transporting ligands. The present invention also provides nanostructure films comprising the nanostructure compositions and methods of making nanostructure films using the nanostructure compositions.

公开(公告)号：US20230113198A1

公开(公告)日：2023-04-13

申请号：US17937878

申请日：2022-10-04

Applicant: NANOSYS, INC.

Inventor： Saket CHADDA

IPC: H01L33/44 ,  H01L33/00 ,  H01L33/30 ,  H01L33/32 ,  H01L33/24 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

Abstract: A light emitting diode includes a mesa structure containing a first-conductivity-type compound semiconductor layer, an active layer stack configured to emit light at a peak wavelength, and a second-conductivity-type compound semiconductor layer, and a passivation material layer contacting at least a sidewall of the mesa structure. The passivation material layer has a first crystal structure that matches a second crystal structure of the first-conductivity-type compound semiconductor layer and the second-conductivity-type compound semiconductor layer.

公开(公告)号：US20220415698A1

公开(公告)日：2022-12-29

申请号：US17807928

申请日：2022-06-21

Applicant: NANOSYS, INC.

Inventor： Ivan HUANG ,  Massimo MARTINELLI ,  Eric STRASILLA

IPC: H01L21/683

Abstract: An apparatus for transferring light-emitting diodes (LEDs) includes a backing board for supporting a backplane, a sealing member formed on the backing board around a periphery of the backplane, a transparent panel formed on the sealing member such that a space is formed between the backing board and the transparent panel, and a vacuum source for drawing a vacuum on the space.

公开(公告)号：US11360250B1

公开(公告)日：2022-06-14

申请号：US17510638

申请日：2021-10-26

Applicant: Nanosys, Inc.

Inventor： Wenzhou Guo ,  Ravisubhash Tangirala ,  Chunming Wang ,  Charles Hotz ,  Alain Barron

IPC: G02B5/22 ,  C01G15/00 ,  G02B1/04 ,  B82Y20/00

Abstract: Disclosed are stable films comprising Ag, In, Ga, and S (AIGS) nanostructures, or more one metal alkoxides, one or more metal alkoxide hydrolysis products, one or more metal halides, one or more metal halide hydrolysis products, one or more organometallic compounds, or one or more organometallic hydrolysis products, or combinations thereof, and at least one ligand bound to the nanostructures. In some embodiments, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm. In some embodiments, the nanostructures have a photon conversion efficiency (PCE) of at least 30% after being stored for 24 hours under yellow light and air storage conditions.

公开(公告)号：US20220149240A1

公开(公告)日：2022-05-12

申请号：US17583867

申请日：2022-01-25

Applicant: NANOSYS, INC.

Inventor： Max Batres ,  Fariba Danesh ,  Michael J. Cich ,  Zhen Chen

IPC: H01L33/32 ,  H01L33/00 ,  H01L33/46 ,  H01L25/075

Abstract: A light emitting device (LED) includes an n-doped semiconductor material layer, an active region including an optically active compound semiconductor layer stack configured to emit light located on the n-doped semiconductor material layer, a p-doped semiconductor material layer located on the active region, an anode contact contacting the p-doped semiconductor material layer, a reflector overlying and electrically connected to the anode contact, and a device-side bonding pad layer located on the reflector. The p-doped semiconductor material layer includes an electrically active region that is at least partially covered by the anode contact and an inactive region that an electrical conductivity less than 30% of the electrically active region.

公开(公告)号：US11296150B2

公开(公告)日：2022-04-05

申请号：US16661078

申请日：2019-10-23

Applicant: Nanosys, Inc.

Inventor： Jesse R. Manders ,  Brian H. Berkeley

IPC: H01L27/32 ,  H01L51/50 ,  H01L25/16 ,  H01L51/52 ,  H01L25/18

Abstract: Embodiments of a display device are described. A display device includes first and second sub-pixels. The first sub-pixel includes a first light source having a multi-layer stack and a first substrate configured to support the first light source. The multi-layer stack includes an organic phosphor film or a quantum dot (QD) based phosphor film configured to emit a first light having a first peak wavelength. The first substrate includes a first control circuitry configured to independently control the first light source. The second sub-pixel includes a second light source and a second substrate configured to support the second light source. The second light source has a microLED or a miniLED configured to emit a second light having a second peak wavelength that is different from the first peak wavelength. The second peak wavelength can be in the blue wavelength region of the visible spectrum. The second substrate includes a second control circuitry configured to independently control the second light source.

公开(公告)号：US11275205B2

公开(公告)日：2022-03-15

申请号：US16521325

申请日：2019-07-24

Applicant: NANOSYS, Inc.

Inventor： Ernest Chung-Wei Lee

IPC: F21V8/00 ,  G02F1/1335 ,  G02F1/13357 ,  H01L31/0352 ,  H01L51/50

Abstract: A display device is provided having a quantum dot formed directly on a surface or substrate of a backlight unit, without requiring an intervening layer. An optically transmissive layer is formed thereon. The quantum dot film may be provided that includes a population of optical features to permit the omission of additional films, such as a separate optical film. A population of optical features may include a population of embedded microspheres to achieve optical effects, to improve the overall thickness uniformity of the quantum dot film, or both. Additionally or alternatively, the quantum dot film may be provided having optical features embossed thereon, such as reflective and/or refractive features, prisms, grooves, grooved prisms, lenticular lenses, micro-lenses, micro-spheres, any other lenses, pitches, or other suitable brightness enhancement and/or optical features. Thereby, a separate optical film may be omitted from the overall device structure.

公开(公告)号：US11268022B2

公开(公告)日：2022-03-08

申请号：US16824824

申请日：2020-03-20

Applicant: Nanosys, Inc.

Inventor： Christian Ippen ,  John J. Curley ,  Donald Zehnder ,  Dylan Charles Hamilton ,  Benjamin Newmeyer ,  Ruiqing Ma

IPC: C09K11/70 ,  C09K11/88 ,  C09K11/56 ,  H01L51/50 ,  C09K11/02 ,  B82Y40/00 ,  B82Y30/00 ,  B82Y20/00

Abstract: The invention relates to highly stable nanostructures with inorganic ligands for electroluminescent devices, particularly nanostructure composition comprising at least one population of nanostructures; and at least one fluoride containing ligand bound to the surface of the nanostructure; wherein the fluoride containing ligand is selected from the group consisting of a fluorozincate, tetrafluoroborate, and hexafluorophosphate. The invention also relates to highly stable nanostructures comprising at least one population of nanostructures and fluoride anions bound to the surface of the nanostructure. The invention also relates to methods of producing such nanostructures.

公开(公告)号：US11121339B2

公开(公告)日：2021-09-14

申请号：US16406930

申请日：2019-05-08

Applicant: Nanosys, Inc.

Inventor： Emma Rose Dohner ,  Yeewah Annie Chow ,  Wenzhuo Guo ,  Christian Justus Ippen ,  Jason Travis Tillman ,  Jonathan Andrew Truskier

IPC: H01L51/50 ,  H01L51/56

Abstract: Embodiments of the present application relate to illumination devices using luminescent nanostructures. An illumination device includes a first conductive layer, a second conductive layer, a hole transport layer, an electron transport layer and a material layer that includes a plurality of luminescent nanostructures. The hole transport layer and the electron transport layer are each disposed between the first conductive layer and the second conductive layer. The material layer is disposed between the hole transport layer and the electron transport layer and includes one or more discontinuities in its thickness such that the hole transport layer and the electron transport layer contact each other at the one or more discontinuities. Resonant energy transfer occurs between the luminescent nanostructures and excitons at the discontinuities.