公开(公告)号：US07233039B2

公开(公告)日：2007-06-19

申请号：US10829313

申请日：2004-04-21

申请人： Yiming Huai ,  Paul P. Nguyen

发明人： Yiming Huai ,  Paul P. Nguyen

IPC分类号： H01L29/76

CPC分类号： G11C11/16

摘要： A method and system for providing a magnetic element is disclosed. The method and system include providing a free layer, a spacer layer, and a pinned layer. The free layer is ferromagnetic and has a free layer magnetization. The spacer layer is nonmagnetic and resides between the pinned and free layers. The pinned layer includes first and second ferromagnetic layers having first and second magnetizations, a nonmagnetic spacer layer, and a spin depolarization layer. Residing between the first and second ferromagnetic layers, the nonmagnetic spacer layer is conductive and promotes antiparallel orientations between the first and second magnetizations. The spin depolarization layer is configured to depolarize at least a portion of a plurality of electrons passing through it. The magnetic element is also configured to allow the free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element.

摘要翻译： 公开了一种用于提供磁性元件的方法和系统。 该方法和系统包括提供自由层，间隔层和钉扎层。 自由层是铁磁性的并且具有自由层磁化。 间隔层是非磁性的并且位于被钉扎层和自由层之间。 被钉扎层包括具有第一和第二磁化的第一和第二铁磁层，非磁性间隔层和自旋去极化层。 在第一和第二铁磁层之间，非磁性间隔层是导电的并促进第一和第二磁化之间的反平行取向。 自旋去极化层被配置为使通过其的多个电子的至少一部分去极化。 磁性元件还被配置为当写入电流通过磁性元件时由于自旋转移使自由层磁化改变方向。

公开(公告)号：US20070063236A1

公开(公告)日：2007-03-22

申请号：US11232356

申请日：2005-09-20

申请人： Yiming Huai ,  Zhitao Diao ,  Eugene Chen

发明人： Yiming Huai ,  Zhitao Diao ,  Eugene Chen

IPC分类号： H01L29/94

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11B5/3983 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3268 ,  H01L27/228 ,  H01L43/10

摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers.

摘要翻译： 诸如磁性或磁阻型隧道结（MTJ）和自旋阀的磁性多层结构具有磁性偏置层，该磁性偏置层形成在自由铁磁层的旁边并磁耦合到自由铁磁层，以实现针对由例如热波动和误差引起的波动的期望的稳定性 领域。 具有低纵横比的稳定的MTJ单元可以使用CMOS处理制造，例如使用磁偏置层的例如高密度MRAM存储器件和其他器件。 可以通过驱动垂直于层的写入电流，使用自旋转移感应开关对这种多层结构进行编程。

公开(公告)号：US07190612B2

公开(公告)日：2007-03-13

申请号：US11096626

申请日：2005-03-31

申请人： Zhenghong Qian ,  Yiming Huai

发明人： Zhenghong Qian ,  Yiming Huai

IPC分类号： G11C11/00

CPC分类号： G11C11/15

摘要： A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells, providing a bit line, providing a plurality of word lines, providing bit line read/write logic, and providing a plurality of switches for the bit line. Each of the magnetic storage cells includes a magnetic storage element capable of being programmed by a write current driven through the magnetic storage element. The bit line corresponds to the magnetic storage cells. Each of the word lines corresponds to a magnetic storage cell of the magnetic storage cells and allows current to flow through the magnetic storage cell. The bit line read/write logic corresponds to the bit line. The switches are for the bit line and controlled by the bit line read/write logic to selectively provide a read current or the write current to the magnetic storage elements.

摘要翻译： 描述了一种用于提供磁存储器的方法和系统。 该方法和系统包括提供多个磁存储单元，提供位线，提供多个字线，提供位线读/写逻辑，以及为位线提供多个开关。 每个磁存储单元包括能够通过通过磁存储元件驱动的写电流来编程的磁存储元件。 位线对应于磁存储单元。 每个字线对应于磁存储单元的磁存储单元，并且允许电流流过磁存储单元。 位线读/写逻辑对应于位线。 这些开关用于位线并由位线读/写逻辑控制，以选择性地向磁存储元件提供读取电流或写入电流。

公开(公告)号：US20070019337A1

公开(公告)日：2007-01-25

申请号：US11185507

申请日：2005-07-19

申请人： Dmytro Apalkov ,  Yiming Huai

发明人： Dmytro Apalkov ,  Yiming Huai

IPC分类号： G11B5/127 ,  H01L21/00 ,  G11B5/33 ,  G11C11/15 ,  G11C11/00

CPC分类号： G01R33/093 ,  G11C11/16

摘要： A method and system for providing a magnetic element and a memory using the magnetic element are described. The method and system include providing a pinned layer, providing a spacer layer, and providing a free layer. The spacer layer is nonferromagnetic and resides between the pinned layer and the free layer. At least the free layer has a first end portion, a second end portion and a central portion between the first end portion and the second end portion. The first end portion, the second end portion and the central portion form an S-shape. At least one of the first end portion and the second end portion includes a curve. The magnetic element is also configured to allow the free layer to be switched at least in part due to spin transfer when a write current is passed through the magnetic element.

摘要翻译： 描述了使用磁性元件提供磁性元件和存储器的方法和系统。 该方法和系统包括提供钉扎层，提供间隔层，并提供自由层。 间隔层是非铁磁性的并且位于被钉扎层和自由层之间。 至少自由层具有在第一端部和第二端部之间的第一端部，第二端部和中心部分。 第一端部，第二端部和中央部形成S形。 第一端部和第二端部中的至少一个包括曲线。 磁性元件还被配置为允许自由层至少部分地由于当写入电流通过磁性元件时的自旋转移而被切换。

公开(公告)号：US20060102969A1

公开(公告)日：2006-05-18

申请号：US10990561

申请日：2004-11-16

申请人： Yiming Huai ,  Mahendra Pakala

发明人： Yiming Huai ,  Mahendra Pakala

IPC分类号： H01L43/00

CPC分类号： G11C11/16 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/302 ,  H01F41/303 ,  H01L43/08

摘要： A method and system for providing a magnetic element is disclosed. The magnetic element include providing a pinned layer, a spacer layer, and a free layer. The method and system also include providing a heat assisted switching layer and a spin scattering layer between the free layer and the heat assisted switching layer. The spin scattering layer is configured to more strongly scatter majority electrons than minority electrons. The heat assisted switching layer is for improving a thermal stability of the free layer when the free layer is not being switched. Moreover, the magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.

摘要翻译： 公开了一种用于提供磁性元件的方法和系统。 磁性元件包括提供钉扎层，间隔层和自由层。 该方法和系统还包括在自由层和热辅助切换层之间提供热辅助切换层和自旋散射层。 自旋散射层配置成比少数电子更强烈地散射多数电子。 热辅助切换层用于在自由层不被切换时改善自由层的热稳定性。 此外，磁性元件被配置为当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

公开(公告)号：US07026672B2

公开(公告)日：2006-04-11

申请号：US10714357

申请日：2003-11-14

申请人： Mahendra Pakala ,  Yiming Huai

发明人： Mahendra Pakala ,  Yiming Huai

IPC分类号： H01L29/76

摘要： A method and system for providing a magnetic memory is disclosed. The method and system include providing a plurality of magnetic elements and providing at least one stress-assist layer. Each of the plurality of magnetic elements is configured to be written using spin transfer. The at least one stress-assist layer is configured to exert at least one stress on at least one magnetic element of the plurality of magnetic elements during writing. The reduction of spin-transfer switching current is due to stress exerted by the stress-assist layer on the magnetic elements during writing. Stability of the magnetic memory with respect to thermal fluctuations is not compromised because the energy barrier between the two magnetization states is unchanged once the switching current is turned off.

公开(公告)号：US20060049472A1

公开(公告)日：2006-03-09

申请号：US10938219

申请日：2004-09-09

申请人： Zhitao Diao ,  Yiming Huai ,  Thierry Valet ,  Paul Nguyen ,  Mahendra Pakala

发明人： Zhitao Diao ,  Yiming Huai ,  Thierry Valet ,  Paul Nguyen ,  Mahendra Pakala

IPC分类号： H01L43/00 ,  H01L29/82

CPC分类号： H01F10/3272 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/30 ,  H01F41/302 ,  H01L43/10

摘要： A method and system for providing a magnetic element is disclosed. The method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element. In one aspect, the method and system include providing a spin engineered layer adjacent to the free layer. The spin engineered layer is configured to more strongly scatter majority electrons than minority electrons. In another aspect, at least one of the pinned, free, and spacer layers is a spin engineered layer having an internal spin engineered layer configured to more strongly scatter majority electrons than minority electrons. In this aspect, the magnetic element may include another pinned layer and a barrier layer between the free and pinned layers.

摘要翻译： 公开了一种用于提供磁性元件的方法和系统。 该方法和系统包括在被钉扎层和自由层之间提供钉扎层，自由层和间隔层。 间隔层是非磁性的。 磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。 在一个方面，该方法和系统包括提供与自由层相邻的旋转工程化层。 旋转工程层被配置为比少数电子更强烈地散射多数电子。 在另一方面，被钉扎，自由和间隔层中的至少一个是具有内部自旋工程化层的纺丝工程层，其被配置成比少数电子更强烈地散射多数电子。 在这方面，磁性元件可以包括另一被钉扎层和位于游离层和钉扎层之间的阻挡层。

公开(公告)号：US06985385B2

公开(公告)日：2006-01-10

申请号：US10649119

申请日：2003-08-26

申请人： Paul P. Nguyen ,  Yiming Huai

发明人： Paul P. Nguyen ,  Yiming Huai

IPC分类号： G11C11/15

CPC分类号： G11C11/16 ,  B82Y25/00 ,  G11C11/5607 ,  H01F10/3263 ,  H01L43/08

摘要： A method and system for providing a magnetic element capable of storing multiple bits is disclosed. The method and system include providing first pinned layer, a first nonmagnetic layer, a first free layer, a connecting layer, a second pinned layer, a second nonmagetic layer and a second free layer. The first pinned layer is ferromagnetic and has a first pinned layer magnetization pinned in a first direction. The first nonmagnetic layer resides between the first pinned layer and the first free layer. The first free layer being ferromagnetic and has a first free layer magnetization. The second pinned layer is ferromagnetic and has a second pinned layer magnetization pinned in a second direction. The connecting layer resides between the second pinned layer and the first free layer. The second nonmagnetic layer resides between the second pinned layer and the second free layer. The second free layer being ferromagnetic and having a second free layer magnetization. The magnetic element is configured to allow the first free layer magnetization and the second free layer magnetization to change direction due to spin transfer when a write current is passed through the magnetic element.

摘要翻译： 公开了一种用于提供能够存储多个位的磁性元件的方法和系统。 该方法和系统包括提供第一被钉扎层，第一非磁性层，第一自由层，连接层，第二钉扎层，第二非弹性层和第二自由层。 第一固定层是铁磁性的并且具有沿第一方向固定的第一固定层磁化。 第一非磁性层位于第一被钉扎层和第一自由层之间。 第一自由层是铁磁性的并且具有第一自由层磁化。 第二被钉扎层是铁磁性的并且具有沿第二方向固定的第二钉扎层磁化。 连接层位于第二被钉扎层和第一自由层之间。 第二非磁性层位于第二被钉扎层和第二自由层之间。 第二自由层是铁磁性的并且具有第二自由层磁化。 磁性元件被配置为当写入电流通过磁性元件时，由于自旋转移使第一自由层磁化和第二自由层磁化改变方向。

公开(公告)号：US06967863B2

公开(公告)日：2005-11-22

申请号：US10787701

申请日：2004-02-25

申请人： Yiming Huai

发明人： Yiming Huai

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/16

CPC分类号： G11C11/16 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  H01F10/3236 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/302 ,  H01L43/08

摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The method and system include providing a first pinned layer, a barrier layer, a free layer, a conductive nonmagnetic spacer layer, and a second pinned layer. Each pinned layer has a pinned layer easy axis. At least a portion of the pinned layer easy axis is in a perpendicular direction. The barrier layer resides between the first pinned layer and the free layer. The spacer layer is between the free layer and the second pinned layer. The free layer has a free layer easy axis, at least a portion of which is in the perpendicular direction. The magnetic element is also configured to allow the free layer to be switched due to spin transfer effect when a write current is passed through the magnetic element. Because of the perpendicular magnetization(s), the writing current for spin transfer may be significantly reduced.

摘要翻译： 公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。 该方法和系统包括提供第一被钉扎层，阻挡层，自由层，导电非磁性间隔层和第二钉扎层。 每个钉扎层具有固定层易轴。 被钉扎层容易轴的至少一部分处于垂直方向。 阻挡层位于第一被钉扎层和自由层之间。 间隔层位于自由层和第二被钉扎层之间。 自由层具有自由层易轴，其至少一部分在垂直方向。 磁性元件还被配置为当写入电流通过磁性元件时由于自旋转移效应而允许自由层被切换。 由于垂直磁化（s），自旋转移的写入电流可能会显着降低。

公开(公告)号：US06958927B1

公开(公告)日：2005-10-25

申请号：US10269011

申请日：2002-10-09

申请人： Paul P. Nguyen ,  Yiming Huai

发明人： Paul P. Nguyen ,  Yiming Huai

IPC分类号： G11C11/00 ,  G11C11/16

CPC分类号： G11C11/16 ,  H01L43/08

摘要： A magnetic element that can be used in a memory array having high density includes a pinned layer, a half-metallic material layer, a spacer (or a barrier) layer and a free layer. The half-metallic material layer is formed on the pinned layer and preferably has a thickness that is less than about 100 Å. The half-metallic material layer can be formed to be a continuous layer or a discontinuous on the pinned layer. The spacer (or barrier) layer is formed on the half-metallic material layer, such that the spacer (or barrier) layer is nonmagnetic and conductive (or insulating). The free layer is formed on the spacer (or barrier) layer and has a second magnetization that changes direction based on the spin-transfer effect when a write current passes through the magnetic element.

摘要翻译： 可用于具有高密度的存储器阵列中的磁性元件包括钉扎层，半金属材料层，间隔物（或阻挡层）层和自由层。 半金属材料层形成在钉扎层上，优选地具有小于约的厚度。 半金属材料层可以形成为连续层或在被钉扎层上形成不连续的。 间隔物（或阻挡层）形成在半金属材料层上，使得间隔物（或阻挡层）是非磁性的并且是导电的（或绝缘的）。 自由层形成在间隔物（或阻挡层）上，并具有当写入电流通过磁性元件时基于自旋转移效应改变方向的第二磁化。