公开(公告)号：US10096663B2

公开(公告)日：2018-10-09

申请号：US14785777

申请日：2015-03-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zheng Liu ,  Xiaoyong Lu ,  Xiaolong Li ,  Chien Hung Liu ,  Chunping Long

IPC: H01L27/12 ,  H01L27/32 ,  H01L51/52 ,  H01L51/56

Abstract: A manufacturing method of an array substrate, an array substrate and a display device are provided. The manufacturing method of the array substrate comprises: forming a first conductive thin film (100) on a base substrate (1); and patterning the first conductive thin film (100), to form a pattern of a cathode (11) on a first region (11) of the base substrate (1), and form a pattern of a gate electrode (4) on a second region (12) of the base substrate (1). Complexity and process time of a fabrication process of an array substrate can be reduced, a fabrication process of an organic electroluminescent panel can be simplified, and production cost can be reduced, by forming a cathode layer of a light-emitting diode and a gate electrode layer of a thin film transistor in different regions of the base substrate at the same time by one patterning process.

公开(公告)号：US10049873B2

公开(公告)日：2018-08-14

申请号：US15228140

申请日：2016-08-04

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xiaowei Xu ,  Xiaolong Li

IPC: H01L21/02 ,  H01L21/67 ,  H01L29/66 ,  H01L29/786 ,  B23K26/00

Abstract: The invention provides a preparation method of a low temperature poly-silicon thin film, a preparation method of a low temperature poly-silicon thin film transistor, and a laser crystallization apparatus, and belongs to the technical field of display. The preparation method of a low temperature poly-silicon thin film of the invention comprises: forming an amorphous silicon thin film on a transparent substrate; and performing laser annealing on said amorphous silicon thin film from a side of said amorphous silicon thin film departing from said substrate, and performing laser irradiation from a side of said substrate departing from said amorphous silicon thin film, to form a low temperature poly-silicon thin film. The preparation method of a low temperature poly-silicon thin film of the invention may not only perform laser annealing on an amorphous silicon thin film form a side of the amorphous silicon thin film departing from the substrate, but also perform laser irradiation from a side of the substrate departing from the amorphous silicon thin film, and the temperature of the amorphous silicon thin film can be retained by performing laser irradiation from a side of the substrate departing from the amorphous silicon thin film. In this way, the crystallization period of poly-silicon may be elongated, and it is possible to obtain crystal grains with larger sizes, to increase carrier mobility, and to reduce drain current.

公开(公告)号：US20170207086A1

公开(公告)日：2017-07-20

申请号：US15228140

申请日：2016-08-04

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xiaowei Xu ,  Xiaolong Li

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/67 ,  H01L29/786

CPC classification number: H01L21/02675 ,  B23K26/00 ,  B23K26/0006 ,  B23K26/0619 ,  B23K26/0622 ,  B23K26/352 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/18 ,  B23K2103/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/02691 ,  H01L29/6675 ,  H01L29/78672

Abstract: The invention provides a preparation method of a low temperature poly-silicon thin film, a preparation method of a low temperature poly-silicon thin film transistor, and a laser crystallization apparatus, and belongs to the technical field of display. The preparation method of a low temperature poly-silicon thin film of the invention comprises: forming an amorphous silicon thin film on a transparent substrate; and performing laser annealing on said amorphous silicon thin film from a side of said amorphous silicon thin film departing from said substrate, and performing laser irradiation from a side of said substrate departing from said amorphous silicon thin film, to form a low temperature poly-silicon thin film. The preparation method of a low temperature poly-silicon thin film of the invention may not only perform laser annealing on an amorphous silicon thin film form a side of the amorphous silicon thin film departing from the substrate, but also perform laser irradiation from a side of the substrate departing from the amorphous silicon thin film, and the temperature of the amorphous silicon thin film can be retained by performing laser irradiation from a side of the substrate departing from the amorphous silicon thin film. In this way, the crystallization period of poly-silicon may be elongated, and it is possible to obtain crystal grains with larger sizes, to increase carrier mobility, and to reduce drain current.