利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

96 条记录 (耗时 0.034 秒)

    IMAGE SENSOR PACKAGE STRUCTURE
    93.
    发明申请
    IMAGE SENSOR PACKAGE STRUCTURE 有权
    图像传感器包装结构

    公开(公告)号：US20110024610A1

    公开(公告)日：2011-02-03

    申请号：US12579493

    申请日：2009-10-15

    申请人： Hsiu-Wen Tu ,  Ren-Long Kuo ,  Young-Houng Shiao ,  Tsao-Pin Chen ,  Mon-Nan Ho ,  Chih-Cheng Hsu ,  Chin-Fu Lin ,  Chung-Hsien Hsin

    发明人： Hsiu-Wen Tu ,  Ren-Long Kuo ,  Young-Houng Shiao ,  Tsao-Pin Chen ,  Mon-Nan Ho ,  Chih-Cheng Hsu ,  Chin-Fu Lin ,  Chung-Hsien Hsin

    IPC分类号： H01J5/02

    CPC分类号： H01L27/14618 ,  H01L23/04 ,  H01L23/10 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2924/00

    摘要： The present invention discloses an image sensor package structure. The image sensor package structure includes a substrate, a chip, a transparent lid, a first casing and a package material. The transparent lid covers a sensitization area of the chip and it also adheres to the chip which is deposed on the substrate. The first casing, which adheres to the transparent lid, forms an opening so that light can pass through the opening and the transparent lid to enter into the sensitization area. The package material covers around the chip and the transparent lid and fills between the substrate and the first casing. Because of the arrangement of adhesive layers placed between the first casing and the transparent lid and between the transparent lid and the chip, the blockage area from moisture is elongated. Therefore, the reliability of the image sensor package structure can be enhanced.

    摘要翻译： 本发明公开了一种图像传感器封装结构。 图像传感器封装结构包括基板，芯片，透明盖，第一壳体和封装材料。 透明盖子覆盖了芯片的敏化区域，并且还粘附在衬底上的芯片上。 附着在透明盖上的第一壳体形成开口，使得光线可以穿过开口和透明盖子进入致敏区域。 封装材料围绕芯片和透明盖子覆盖并填充在基板和第一壳体之间。 由于布置在第一壳体和透明盖之间以及透明盖和芯片之间的粘合剂层的布置，所以来自湿气的阻塞区域被拉长。 因此，可以提高图像传感器封装结构的可靠性。

    METHOD OF FABRICATING A DUAL-DAMASCENE COPPER STRUCTURE
    94.
    发明申请
    METHOD OF FABRICATING A DUAL-DAMASCENE COPPER STRUCTURE 有权
    制备双 - 二甲苯铜结构的方法

    公开(公告)号：US20060252250A1

    公开(公告)日：2006-11-09

    申请号：US10908229

    申请日：2005-05-03

    申请人： Hsien-Che Teng ,  Chin-Fu Lin ,  Meng-Chi Chen

    发明人： Hsien-Che Teng ,  Chin-Fu Lin ,  Meng-Chi Chen

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/2855 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873

    摘要： A method for fabricating a dual-damascene copper structure includes providing a semiconductor substrate having a dielectric layer thereon and a dual-damascene hole positioned in the dielectric layer, wherein a portion of the semiconductor substrate is exposed in the dual-damascene hole. A PVD process and an atomic CVD process are sequentially performed to form a substrate-protecting layer and a tantalum nitride layer in the dual-damascene hole. And then a copper layer is formed in the dual-damascene hole.

    摘要翻译： 一种用于制造双镶嵌铜结构的方法包括提供其上具有电介质层的半导体衬底和位于电介质层中的双镶嵌孔，其中半导体衬底的一部分暴露在双镶嵌孔中。 依次进行PVD工艺和原子CVD工艺以在双镶嵌孔中形成衬底保护层和氮化钽层。 然后在双镶嵌孔中形成铜层。

    METHOD OF FORMING A MATERIAL FILM
    95.
    发明申请
    METHOD OF FORMING A MATERIAL FILM 失效
    形成材料膜的方法

    公开(公告)号：US20060040496A1

    公开(公告)日：2006-02-23

    申请号：US10711067

    申请日：2004-08-20

    申请人： Hsien-Che Teng ,  Chin-Fu Lin

    发明人： Hsien-Che Teng ,  Chin-Fu Lin

    IPC分类号： H01L21/44 ,  H01L21/4763

    CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/76841 ,  H01L21/76862

    摘要： A method of forming a material film is provided. A chemical vapor deposition (CVD) chamber including therein a showerhead coupled to a gas source and a pedestal coupled to a heater is provided. The showerhead is coupled to a radio frequency (RF) power source. A substrate is positioned on the pedestal. The substrate is then heated by the heater. A tantalum-containing organic metal precursor gas is flowed into the CVD chamber through the showerhead with the RF power source being off, thereby depositing a material film on the heated substrate. Thereafter the RF power source is turned on to output a RF power. An inert gas is flowed into the chamber. The material film in-situ plasma treated within the CVD chamber by providing the RF power to the inert gas. The substrate is removed out of the CVD chamber.

    摘要翻译： 提供了形成材料膜的方法。 提供化学气相沉积（CVD）室，其中包括耦合到气体源的喷头和连接到加热器的基座。 淋浴头耦合到射频（RF）电源。 衬底位于基座上。 然后通过加热器加热基底。 含有机金属前体气体通过喷头喷射到CVD室中，其中RF功率源关闭，从而在被加热的衬底上沉积材料膜。 此后，RF电源被接通以输出RF功率。 惰性气体流入腔室。 通过向惰性气体提供RF功率，在CVD室内处理材料膜原位等离子体。 将衬底从CVD室中取出。

    Global view storage management system for semiconductor manufacturing plants
    96.
    发明授权
    Global view storage management system for semiconductor manufacturing plants 失效
    半导体制造工厂全球视野存储管理系统

    公开(公告)号：US5778386A

    公开(公告)日：1998-07-07

    申请号：US654365

    申请日：1996-05-28

    申请人： Chin-Mou Lin ,  Chin-Fu Lin

    发明人： Chin-Mou Lin ,  Chin-Fu Lin

    IPC分类号： H01L21/66 ,  G06F17/30

    CPC分类号： H01L22/20 ,  G06Q10/087 ,  Y10S707/99931 ,  Y10S707/99933 ,  Y10S707/99937

    摘要： A computer operated method comprises a sequence of steps for management of data of a manufacturing operation with workstations in several different functional locations. The manufacturing operation is configured to perform a specific task at each location. Data for lots of work located in containers in the plant is read. The data which has been read is sent through a polling engine for transmission to be collected in a database system. The collected data is then supplied from the database system to a plurality of programmable workstations which are linked to the database by lines in a star network.

    摘要翻译： 计算机操作的方法包括用于在几个不同功能位置中用工作站管理制造操作的数据的步骤序列。 制造操作被配置为在每个位置执行特定任务。 读取位于工厂容器中的大量工作的数据。 已经读取的数据通过轮询引擎发送以进行传输以被收集到数据库系统中。 然后，所收集的数据从数据库系统提供给通过星形网络中的线路链接到数据库的多个可编程工作站。