Devices having substrates with selective airgap regions

    公开(公告)号:US11088244B2

    公开(公告)日:2021-08-10

    申请号:US16082268

    申请日:2016-03-30

    Inventor: Di Liang

    Abstract: Examples herein relate to devices having substrates with selective airgap regions for mitigating defects resulting from heteroepitaxial growth of device materials. An example device may include a first semiconductor layer disposed on a substrate. The first semiconductor layer may have a window cut through a face, where etching a selective airgap region on the substrate is enabled via the window. A second semiconductor layer may be heteroepitaxially grown on the face of the first semiconductor layer so that at least a portion of the second semiconductor layer is aligned over the selective air gap region.

    Injection locked multi-wavelength optical source

    公开(公告)号:US11029476B2

    公开(公告)日:2021-06-08

    申请号:US16582907

    申请日:2019-09-25

    Inventor: Di Liang Zhixin Liu

    Abstract: Examples herein relate to optical systems. In particular, implementations herein relate to an optical system including an optical transmitter configured to transmit optical signals. The optical transmitter includes a first optical source configured to emit light having different wavelengths, a waveguide, and an optical coupler configured to couple the emitted light from the first optical source to the waveguide. The optical transmitter further includes an array of two or more second optical sources coupled to the waveguide, each of the two or more second optical sources configured to be injection locked to a different respective wavelength of the emitted light transmitted via the waveguide from the first optical source. In some implementations, the first optical source is a master comb laser and the two or more second optical sources are slave ring lasers.

    OPTOELECTRONIC COMPONENT WITH CURRENT DEFLECTED TO HIGH-GAIN PATHS

    公开(公告)号:US20210083138A1

    公开(公告)日:2021-03-18

    申请号:US16949723

    申请日:2020-11-12

    Abstract: A three-terminal avalanche photodiode provides a first controllable voltage drop across a light absorbing region and a second, independently controllable, voltage drop across a photocurrent amplifying region. The absorbing region may also have a different composition from the amplifying region, allowing further independent optimization of the two functional regions. An insulating layer blocks leakage paths, redirecting photocurrent toward the region(s) of highest avalanche gain. The resulting high-gain, low-bias avalanche photodiodes may be fabricated in integrated optical circuits using commercial CMOS processes, operated by power supplies common to mature computer architecture, and used for optical interconnects, light sensing, and other applications.

    SYSTEMS FOR EFFICIENT CYCLICAL FIBER-OPTIC CONNECTIONS

    公开(公告)号:US20210036481A1

    公开(公告)日:2021-02-04

    申请号:US16527352

    申请日:2019-07-31

    Abstract: Processes and apparatuses described herein provide for an efficient cyclical fiber-optic connection between a source component and multiple destination components in a computing environment. A comb laser generates a laser signal that includes laser light of a first frequency that is red-shifted from a carrier frequency. The comb laser concurrently transmits the laser signal to four ring resonators via an optical waveguide. Three of the ring resonators are initially configured for optical resonance at a second frequency that is blue-shifted from the carrier frequency, while one of the ring resonators is initially configured for optical resonance at the first frequency. The laser signal is modulated to communicate data to a first target location associated with the ring resonator that is initially configured for optical resonance at the first frequency.

    OPTICAL SYSTEM HAVING A BIDIRECTIONAL INTERLEAVED OPTICAL LINK

    公开(公告)号:US20200350991A1

    公开(公告)日:2020-11-05

    申请号:US16399176

    申请日:2019-04-30

    Abstract: Examples herein relate to optical systems. In particular, implementations herein relate to an optical system including a bidirectional optical link such as an optical fiber. The optical system includes first and second optical modules coupled to opposing ends of the optical fiber. The first optical module is configured to transmit optical signals across the optical fiber in a first direction and the second optical module is configured to transmit optical signals across the optical fiber in a second direction opposite the first direction. Each of the first and second optical modules includes a multi-wavelength optical source configured to emit light. Respective channel spacing of the multi-wavelength optical sources of the first and second optical modules are offset from each other such that the respective wavelengths of the emitted light transmitted across the optical fiber from the first and second optical sources do not overlap.

    Three-Terminal Optoelectronic Component with Improved Matching of Electric Field and Photocurrent Density

    公开(公告)号:US20200274019A1

    公开(公告)日:2020-08-27

    申请号:US16283224

    申请日:2019-02-22

    Abstract: A three-terminal avalanche photodiode provides a first controllable voltage drop across a light absorbing region and a second, independently controllable, voltage drop across a photocurrent amplifying region. The compositions of the absorbing region and the amplifying region may be optimized independently of each other. In the amplifying region, p-doped and n-doped structures are offset from each other both horizontally and vertically. Directly applying a voltage across a controlled region of the photocurrent path increases avalanche gain by shaping the electric field to overlap the photocurrent density. The resulting high-gain, low-bias avalanche photodiodes may be fabricated in integrated optical circuits using commercial CMOS processes, operated by power supplies common to mature computer architecture, and used for optical interconnects, light sensing, and other applications.

    QUANTUM-DOT PHOTONICS
    100.
    发明申请

    公开(公告)号:US20200028323A1

    公开(公告)日:2020-01-23

    申请号:US16489495

    申请日:2017-02-28

    Abstract: Examples disclosed herein relate to quantum-dot (QD) photonics. In accordance with some of the examples disclosed herein, a QD semiconductor optical amplifier (SOA) may include a silicon substrate and a QD layer above the silicon substrate. The QD layer may include an active gain region to amplify a lasing mode received from an optical signal generator. The QD layer may have a gain recovery time such that the active gain region amplifies the received lasing mode without pattern effects. A waveguide may be included in an upper silicon layer of the silicon substrate. The waveguide may include a mode converter to facilitate optical coupling of the received lasing mode between the QD layer and the waveguide.

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