Thin-film transistors
    97.
    发明授权

    公开(公告)号:US11887993B2

    公开(公告)日:2024-01-30

    申请号:US17424911

    申请日:2019-05-13

    CPC classification number: H01L27/1225 H01L29/66969 H01L29/7869 H10K59/12

    Abstract: The present disclosure is drawn to thin-film transistors, electronic displays that include thin-film transistors, and methods of making thin-film transistors. In one example, a thin-film transistor can include a nonconductive substrate, a semiconductor layer on the nonconductive substrate, a source electrode adjacent a first side of the semiconductor layer and partially overlapping a first peripheral portion of the semiconductor layer, a drain electrode adjacent a second side of the semiconductor layer and partially overlapping a second peripheral portion of the semiconductor layer, an etch stop layer on the semiconductor layer, a gat insulator layer on the etch stop layer, and a gate electrode on the gate insulator layer. The source electrode and the drain electrode do not overlap the etch stop layer.

    Hinge assemblies
    100.
    发明授权

    公开(公告)号:US11379014B2

    公开(公告)日:2022-07-05

    申请号:US16980868

    申请日:2018-03-16

    Abstract: Examples of hinge assemblies are described. In an example, a hinge assembly includes a first hinge element having a first shaft, a second hinge element having a second shaft, and a clip coupling the first shaft to the second shaft. The clip includes a first portion formed of c a composite material and a second portion formed of a metal.

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