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91.发明授权Stock developer solutions for photoresists and developer solutions prepared by dilution thereof 失效用于通过稀释制备的光致抗蚀剂和显影剂溶液的库存显影剂溶液
公开(公告)号：US5753421A
公开(公告)日：1998-05-19
申请号：US412885
申请日：1995-03-29
CPC分类号： G03F7/32
摘要： Stock developer solutions for photoresists contain an organic base free from metal ions and at least one compound having a specified weight average molecular weight that is selected from among polyethylene oxide compounds, polypropylene oxide compounds and ethylene oxide/propylene oxide adducts. The stock developer solutions may be diluted to requisite concentrations to prepare developer solutions for photoresists. By adding one or more of the specified compounds to the organic base free from metal ions, one can produce highly compatible stock developer solutions for photoresists that are concentrated, that have high stability in quality and that permit ease in handling and quality control. The stock developer solutions may be diluted to prepare developer solutions that are small in the tendency to foam and effective in defoaming, that assure uniform wetting and that are capable of forming resist patterns faithful to mask patterns.
摘要翻译： 用于光致抗蚀剂的储备显影剂溶液含有不含金属离子的有机碱和至少一种具有指定重均分子量的化合物，其选自聚环氧乙烷化合物，聚环氧丙烷化合物和环氧乙烷/环氧丙烷加合物。 原料显影剂溶液可以稀释至必需的浓度以制备用于光致抗蚀剂的显影剂溶液。 通过将一种或多种指定的化合物加入到不含金属离子的有机基质中，可以生产高浓度的光致抗蚀剂的高度相容的原料显影剂溶液，其具有高的质量稳定性并且易于处理和质量控制。 可以将原料显影剂溶液稀释以制备发泡趋势小并且有效消泡的显影剂溶液，其确保均匀的润湿并且能够形成忠实于掩模图案的抗蚀剂图案。
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92.发明授权Positive resist composition comprising a mixture of two polyhydroxystyrenes having different acid cleavable groups and an acid generating compound 失效包含两种具有不同的酸可分解基团的聚羟基苯乙烯和产酸化合物的混合物的正性抗蚀剂组合物
公开(公告)号：US5736296A
公开(公告)日：1998-04-07
申请号：US625931
申请日：1996-04-01
申请人： Mitsuru Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Etsuko Iguchi , Yoshika Sakai , Kazufumi Sato , Toshimasa Nakayama
发明人： Mitsuru Sato , Kazuyuki Nitta , Akiyoshi Yamazaki , Etsuko Iguchi , Yoshika Sakai , Kazufumi Sato , Toshimasa Nakayama
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： Disclosed is an improved, chemically-amplifying positive resist composition for radiations, especially UV rays, deep-UV rays, excimer laser beams, X-rays, electron beams. The composition comprises (A) a resin component whose solubility in an alkaline aqueous solution is increased by the action of acids, (B) a compound which generates an acid when exposed to radiations, and (A) a resin component, (B) an acid-generating agent and (C) an organic carboxylic acid compound, in which said resin component (A) is a mixture comprising (a) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by residues of a general formula (I): ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a methyl group or an ethyl group, and R.sup.3 represents a lower alkyl group having 1 to 4 carbon atoms; and (b) a polyhydroxystyrene where from 10 to 60 mol % of the hydroxyl groups have been substituted by tert-butoxycarbonyloxy groups. The composition has a high sensitivity, a high resolution, high heat resistance, good width characteristic in focus depth and good post-exposure storage stability, has good storage stability as a resist solution, and gives resist patterns with good profiles, without depending on the substrate to which it is applied. The composition is useful for forming fine patterns in producing ultra-LSIs.
摘要翻译： 公开了用于辐射，特别是紫外线，深紫外线，准分子激光束，X射线，电子束的改进的化学增幅正性抗蚀剂组合物。 该组合物包含（A）通过酸的作用在碱性水溶液中的溶解度增加的树脂成分，（B）暴露于辐射时产生酸的化合物，（A）树脂成分，（B） 酸性发生剂和（C）有机羧酸化合物，其中所述树脂组分（A）是包含（a）多羟基苯乙烯的混合物，其中10至60mol％的羟基已被一般的残基取代 式（I）：其中R 1表示氢原子或甲基，R 2表示甲基或乙基，R 3表示碳原子数1〜4的低级烷基。 和（b）聚羟基苯乙烯，其中10至60摩尔％的羟基已被叔丁氧羰基氧基取代。 该组合物具有高灵敏度，高分辨率，高耐热性，聚焦深度的良好宽度特性和良好的曝光后储存稳定性，作为抗蚀剂溶液具有良好的储存稳定性，并且具有良好外形的抗蚀剂图案，而不依赖于 底物。 该组合物可用于在制造超LSI时形成精细图案。
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公开(公告)号：US5714625A
公开(公告)日：1998-02-03
申请号：US712884
申请日：1996-09-12
IPC分类号： G03F7/004 , C07C309/65 , C07C309/66 , C07C255/35
CPC分类号： C07C309/65 , C07C309/66 , C07C2101/10 , C07C2101/16
摘要： Disclosed is a class of novel cyanooxime sulfonate compounds represented by the general formula NC--CR.sup.1 .dbd.N--O--SO.sub.2 --R.sup.2, in which R.sup.1 and R.sup.2 are, each independently from the other, an unsubstituted or halogen-substituted monovalent aliphatic hydrocarbon group selected from the group consisting of alkyl, cycloalkyl, alkenyl and cycloalkenyl groups. The group R.sup.1 is preferably a cycloalkenyl group, e.g. 1-cyclopentenyl or 1-cyclohexenyl group, and R.sup.2 is preferably a lower alkyl group having 1 to 4 carbon atoms. The compound releases an acid by the irradiation with ultraviolet light and is useful as an acid generating agent in an acid-sensitive photoresist composition. By virtue of the high transparency of the compound to ultraviolet, high acid strength of the acid generated therefrom and good solubility of the compound in organic solvents, the photoresist composition compounded with the compound as an acid generating agent is imparted with high sensitivity to ultraviolet and capable of giving a patterned resist layer having excellent characteristics.
摘要翻译： 公开了一类由通式NC-CR1 = NO-SO2-R2表示的新型氰基肟磺酸盐化合物，其中R 1和R 2各自独立地为未取代或卤素取代的一价脂族烃基，其选自 由烷基，环烷基，烯基和环烯基组成的组。 基团R1优选为环烯基，例如 1-环戊烯基或1-环己烯基，R2优选为具有1〜4个碳原子的低级烷基。 该化合物通过紫外线照射而释放酸，并且可用作酸敏感光刻胶组合物中的酸产生剂。 由于化合物对紫外线的高透明度，由其产生的酸的高酸强度和化合物在有机溶剂中的良好溶解性，与作为酸产生剂的化合物混合的光致抗蚀剂组合物赋予对紫外线的高灵敏度， 能够赋予具有优异特性的图案化抗蚀剂层。
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94.发明授权Rinsing solution for lithography and method for processing substrate with the use of the same 有权用于光刻的冲洗溶液和使用它的基板处理方法公开(公告)号：US06815151B2
公开(公告)日：2004-11-09
申请号：US09877124
申请日：2001-06-11
IPC分类号： G03F742
摘要： The present invention provides a rinsing solution for lithography with which finely processed parts of a resist pattern can be well rinsed without corroding a metallic film made of Al, Al—Si, Al—Si—Cu, etc. and which is economically advantageous and has a high safety; and a method for processing a substrate with the use of the same. The rinsing solution contains at least one selected from the group consisting of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether and ethyl lactate.
摘要翻译： 本发明提供了一种用于光刻的冲洗溶液，其中抗蚀剂图案的精细加工部分可以很好地冲洗而不腐蚀由Al，Al-Si，Al-Si-Cu等制成的金属膜，并且在经济上有利并具有 安全性高 以及使用该方法处理基板的方法。 冲洗溶液含有选自乙二醇单甲醚，乙二醇单乙醚，丙二醇单甲醚，丙二醇单乙醚和乳酸乙酯中的至少一种。
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公开(公告)号：USRE38254E1
公开(公告)日：2003-09-16
申请号：US09956516
申请日：2001-09-20
IPC分类号： C08F11214
CPC分类号： G03F7/0392 , G03F7/0045 , Y10S430/106
摘要： Disclosed is an improved, chemically-amplifying positive resist composition for radiations, especially UV rays, deep-UV rays, excimer laser beams, X-rays, electron beams. The composition comprises (A) a resin component whose solubility in an alkaline aqueous solution is increased by the action of acids, (B) a chemical compound which generates an acid when exposed to radiations, and (C) an organic carboxylic acid compound and (D) an amine, in which said resin component (A) is a mixture comprising (a) a polyhydroxystyrene having a weight-average molecular weight of from 8,000 to 25,000 and a molecular weight distribution (Mw/Mn) of 1.5 or less where from 10 to 60 mol % of the hydroxyl groups have been substituted by residues of a general formula (I): wherein R1 represents a hydrogen atom or a methyl group, R2 represents a methyl group or an ethyl group, and R3 represents a lower alkyl group having 1 to 4 carbon atoms; and (b) a polyhydroxystyrene having a weight-average molecular weight of from 8,000 to 25,000 and a molecular weight distribution (Mw/Mn) of 1.5 or less where from 10 to 60 mol % of the hydroxyl groups have been substituted by tert-butoxycarbonyloxy groups. The composition has a high sensitivity, a high resolution, high heat resistance, good width characteristic in focus depth and good post-exposure storage stability, has good storage stability as a resist solution, and gives resist patterns with good profiles, without depending on the substrate to which it is applied. The composition is useful for forming fine patterns in producing ultra-LSIs.
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96.发明授权Photoresist stripping liquid compositions and a method of stripping photoresists using the same 有权光刻胶剥离液体组合物和使用其剥离光致抗蚀剂的方法公开(公告)号：US06291142B1
公开(公告)日：2001-09-18
申请号：US09599729
申请日：2000-06-23
IPC分类号： G03C1124
CPC分类号： G03F7/425
摘要： The present invention relates to photoresist stripping liquid compositions comprising (a) 2-30 wt % of a hydroxylamine, (b) 2-35 wt % of water, (c) 25-40 wt % of at least one member selected from monoethanolamine and diethanolamine, (d) 20-32 wt % of dimethyl sulfoxide and (e) 2-20 wt % of an aromatic hydroxy compound and a method of stripping photoresists with the use of the same. The present invention provides photoresist stripping liquid compositions which are, even at higher treating temperatures, excellent in the capabilities of both stripping photoresist films and modified films and effective in prevention of the corrosion that would otherwise occur in substrates overlaid with Al or Al alloy layers or Ti layers, and a method for stripping photoresists by using the same.
摘要翻译： 本发明涉及光致抗蚀剂剥离液体组合物，其包含（a）2-30重量％的羟胺，（b）2-35重量％的水，（c）25-40重量％的至少一种选自单乙醇胺和 二乙醇胺，（d）20-32重量％的二甲基亚砜和（e）2-20重量％的芳族羟基化合物，以及使用它们剥离光致抗蚀剂的方法。 本发明提供了光刻胶剥离液体组合物，即使在更高的处理温度下，剥离光致抗蚀剂膜和改性膜的性能也是优异的，并且有效地防止了否则会发生在覆盖有Al或Al合金层的基材中的腐蚀，或者 Ti层，以及通过使用它们剥离光致抗蚀剂的方法。
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公开(公告)号：US06245930B1
公开(公告)日：2001-06-12
申请号：US09317208
申请日：1999-05-24
申请人： Katsumi Oomori , Hideo Hada , Fumitake Kaneko , Mitsuru Sato , Kazufumi Sato , Toshimasa Nakayama
发明人： Katsumi Oomori , Hideo Hada , Fumitake Kaneko , Mitsuru Sato , Kazufumi Sato , Toshimasa Nakayama
IPC分类号： C07C25500
CPC分类号： G03F7/0045 , Y10S430/12 , Y10S430/122
摘要： Proposed is a novel chemical-sensitization resist composition capable of giving a positively or negatively patterned resist layer of excellent pattern resolution and cross sectional profile of the patterned resist layer with high sensitivity. Characteristically, the resist composition is formulated, as combined with a resinous ingredient which is subject to changes in the solubility behavior in an alkaline developer solution by interaction with an acid, with a specific oximesulfonate compound as the radiation-sensitive acid-generating agent represented by the general formula R1—C(CN)═N—O—SO2—R2, in which R1 is an inert organic group and R2 is an unsubstituted or substituted polycyclic monovalent hydrocarbon group selected from the group consisting of polycyclic aromatic hydrocarbon groups such as naphthyl and polycyclic non-aromatic hydrocarbon groups such as a terpene or camphor residue.
摘要翻译： 提出了一种能够以高灵敏度赋予图案化抗蚀剂层优异图案分辨率和截面轮廓的正或负图案化抗蚀剂层的新型化学增感抗蚀剂组合物。 特别地，将抗蚀剂组合物配制成与通过与酸相互作用而在碱性显影剂溶液中溶解度行为发生变化的树脂成分与特定的肟磺酸酯化合物作为辐射敏感性产酸剂， R 1为惰性有机基团，R2为未取代或取代的选自多环芳烃基如萘基和多环非芳族烃基如萜烯或樟脑残基的多环一价烃基。
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98.发明授权Coating solution for forming silica coating and method of forming silica coating 失效用于形成二氧化硅涂层的涂层溶液和形成二氧化硅涂层的方法公开(公告)号：US06214104B1
公开(公告)日：2001-04-10
申请号：US08692005
申请日：1996-08-02
IPC分类号： B05D712
摘要： A substrate onto which a coating solution is dropped is rotated at a low speed in a first rotational mode and then after an interval of time at a high speed in a second rotational mode. At the end of the first rotational mode, the coating solution is coated to a thickness larger than a given thickness on irregularities on the substrate such as twin patterns and a global pattern, with the coating solution being coated to a thickness smaller than the given thickness between the twin patterns. Subsequently, at the start of the second rotational mode, the coating solution coated on the twin patterns and the global pattern flows into spaces between these patterns. At the end of the second rotational mode, the thickness of the coating solution on the twin patterns is almost nil, and the thickness of the coating solution on the global pattern is small in its entirety though it is somewhat large in the central area of the global pattern.
摘要翻译： 在第一旋转模式中以低速旋转涂布溶液滴落到其上的基板，然后在第二旋转模式中以高速度在一段时间之后旋转。 在第一旋转模式结束时，将涂布溶液涂覆到基板上的不规则部分上的厚度大于给定厚度，例如双图案和全局图案，涂布溶液的涂布厚度小于给定厚度 在双胞胎之间。 随后，在第二旋转模式开始时，涂覆在双模式上的涂布溶液和全局图案流入这些图案之间的空间。 在第二旋转模式结束时，两个图案上的涂布溶液的厚度几乎为零，并且全局图案上的涂布溶液的厚度整体上小，但是其中心区域 全球格局。
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99.发明授权Liquid coating composition for use in forming antireflective film and photoresist material using said antireflective film 有权用于使用所述抗反射膜形成抗反射膜和光致抗蚀剂材料的液体涂料组合物
公开(公告)号：US06136505A
公开(公告)日：2000-10-24
申请号：US330001
申请日：1999-06-11
IPC分类号： G03F7/004 , G03F7/09 , G03F7/11 , H01L21/027
CPC分类号： G03F7/091
摘要： Disclosed herein is a liquid coating composition for use in forming an antireflective film comprising a mixture of a cyclic perfluoroalkyl polyether and a chain perfluoroalkyl polyether in a ratio of from 3:10 to 10:1 by weight, and a fluorocarbon organic solvent. Disclosed also herein is a photoresist material consisting of a photoresist layer and said antireflective film formed thereon using said liquid coating composition. The antireflective film remarkably reduces the standing-wave effect especially in the case where the photoresist layer of chemically amplified type is used. The antireflective film also has good film quality and film removability.
摘要翻译： 本文公开了一种用于形成抗反射膜的液体涂料组合物，其包含按重量比计为3:10至10:1的环状全氟烷基聚醚和链全氟烷基聚醚的混合物，以及氟碳有机溶剂。 此处还公开了由光致抗蚀剂层和在其上使用所述液体涂料组合物形成的所述抗反射膜组成的光致抗蚀剂材料。 抗反射膜特别是在使用化学放大型光致抗蚀剂层的情况下，显着地降低了驻波效应。 抗反射膜也具有良好的膜质量和膜去除性。
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公开(公告)号：US5856058A
公开(公告)日：1999-01-05
申请号：US660378
申请日：1996-06-07
CPC分类号： G03F7/0226 , G03F7/022 , G03F7/091
摘要： Proposed is a novel chemical sensitization-type positive-working photoresist composition used for the photolithographic patterning works in the manufacture of semiconductor devices exhibiting an excellent halation-preventing effect in the patternwise exposure to light. The composition comprises, in addition to conventional ingredients including an acid-generating agent capable of releasing an acid by the irradiation with actinic rays and a resinous ingredient capable of being imparted with increased solubility in an aqueous alkaline developer solution in the presence of an acid, a unique halation inhibitor which is an esterification product between a specified phenolic compound and a naphthoquinone-1,2-diazide sulfonic acid.
摘要翻译： 提出了一种新型化学增感型正性光致抗蚀剂组合物，用于制造在图案曝光中具有优异的防晕效果的半导体器件中的光刻图案化工作。 该组合物除了包括能够通过光化射线照射释放酸的酸产生剂和能够在酸存在下在碱性显影剂水溶液中赋予增加的溶解性的树脂成分之外， 一种独特的卤化抑制剂，它是指定的酚类化合物与萘醌-1,2-二叠氮磺酸之间的酯化产物。
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