公开(公告)号：USD597153S1

公开(公告)日：2009-07-28

申请号：US29326490

申请日：2008-10-20

申请人： Mark B. Friedman ,  Alden M. Mills ,  John Holland ,  Kevan Hollenback

设计人： Mark B. Friedman ,  Alden M. Mills ,  John Holland ,  Kevan Hollenback

公开(公告)号：US07544251B2

公开(公告)日：2009-06-09

申请号：US10960874

申请日：2004-10-07

申请人： John Holland ,  Theodoros Panagopoulos

发明人： John Holland ,  Theodoros Panagopoulos

IPC分类号： H01T23/00 ,  H01L21/00 ,  C23C16/00

CPC分类号： H01L21/67248 ,  H01L21/67103 ,  H01L21/6831 ,  Y10T279/23

摘要： A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes a support member that is coupled to a base by a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby controlling the temperature profile of a substrate disposed on the support member.

摘要翻译： 提供了一种用于在处理期间控制基板的温度的基座组件和方法。 在一个实施例中，基座组件包括通过材料层联接到基座的支撑构件。 材料层具有至少两个具有不同导热系数的区域。 在另一个实施例中，支撑构件是静电卡盘。 在另外的实施例中，基座组件具有形成在基部和支撑构件之间的通道，用于在材料层附近提供冷却气体，以进一步控制支撑构件与基座之间的热传递，从而控制设置在基座上的基板的温度分布 支持会员

公开(公告)号：US07436645B2

公开(公告)日：2008-10-14

申请号：US11531474

申请日：2006-09-13

申请人： John Holland ,  Theodoros Panagopoulos ,  Alexander Matyushkin ,  Dan Katz ,  Michael F. Hegarty ,  Denis M. Koosau ,  Nicolas Gani

发明人： John Holland ,  Theodoros Panagopoulos ,  Alexander Matyushkin ,  Dan Katz ,  Michael F. Hegarty ,  Denis M. Koosau ,  Nicolas Gani

IPC分类号： H01T23/00

CPC分类号： H01L21/67109 ,  H01L21/67103 ,  H01L21/6831

摘要： A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes an electrostatic chuck coupled to a metallic base. The electrostatic chuck includes at least one chucking electrode and metallic base includes at least two fluidly isolated conduit loops disposed therein. In another embodiment, the pedestal assembly includes a support member that is coupled to a base by a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby controlling the temperature profile of a substrate disposed on the support member.

摘要翻译： 提供了一种用于在处理期间控制基板的温度的基座组件和方法。 在一个实施例中，基座组件包括联接到金属基座的静电卡盘。 静电吸盘包括至少一个夹紧电极和金属底座，其包括设置在其中的至少两个流体隔离的导管环。 在另一个实施例中，基座组件包括通过材料层联接到基座的支撑构件。 材料层具有至少两个具有不同导热系数的区域。 在另一个实施例中，支撑构件是静电卡盘。 在另外的实施例中，基座组件具有形成在基部和支撑构件之间的通道，用于在材料层附近提供冷却气体，以进一步控制支撑构件和基座之间的热传递，由此控制设置在基座上的基板的温度分布 支持会员

公开(公告)号：US20080017104A1

公开(公告)日：2008-01-24

申请号：US11778019

申请日：2007-07-14

申请人： Alexander Matyushkin ,  Dan Katz ,  John Holland ,  Theodoros Panagopoulos ,  Michael Willwerth

发明人： Alexander Matyushkin ,  Dan Katz ,  John Holland ,  Theodoros Panagopoulos ,  Michael Willwerth

IPC分类号： B05C11/00 ,  B05B5/025

CPC分类号： H05B3/0047 ,  B05C13/00 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/6833

摘要： A substrate processing chamber comprises an electrostatic chuck comprising a ceramic puck having a substrate receiving surface and an opposing backside surface. In one version, the ceramic puck comprises a thickness of less than 7 mm. An electrode is embedded in the ceramic puck to generate an electrostatic force to hold a substrate, and heater coils in the ceramic puck allow independent control of temperatures at different heating zones of the puck. A chiller provides coolant to coolant channels in a base below the ceramic puck. A controller comprises temperature control instruction sets which set the coolant temperature in the chiller in relation prior to ramping up or down of the power levels applied to the heater.

摘要翻译： 基板处理室包括静电卡盘，该静电卡盘包括具有基板接收表面和相对的背面的陶瓷盘。 在一个版本中，陶瓷盘包括小于7mm的厚度。 电极嵌入陶瓷盘中以产生静电力来保持基板，并且陶瓷盘中的加热器线圈允许独立控制在不同加热区域的温度。 冷却器为陶瓷盘下方的底座中的冷却剂通道提供冷却剂。 控制器包括温度控制指令集，其将冷却器内的冷却剂温度设定为在施加到加热器的功率水平上升或下降之前。

公开(公告)号：US20070245960A1

公开(公告)日：2007-10-25

申请号：US11410773

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

IPC分类号： C23C16/00

CPC分类号： H01J37/32137 ,  H01J37/32091 ,  H01J37/321

摘要： A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer while inductively coupling RF plasma source power into the process region. A particular plasma ion density level is established by maintaining the total amount of plasma source power inductively and capacitively coupled into the chamber at a level that provides the desired plasma ion density. Chemical species distribution or content in the process region plasma is controlled by adjusting the ratio between the amounts of the capacitively coupled power and the inductively coupled power while continuing to maintain the level of total plasma source power. The method further includes applying independently adjustable LF bias power and HF bias power to the workpiece and adjusting the average value and population distribution of ion energy at the surface of the workpiece by adjusting the proportion between the LF and HF bias powers.

摘要翻译： 在等离子体反应器的腔室中处理工件的方法包括将工艺气体引入室中，将VHF等离子体源功率电容耦合到层叠在晶片上的室的处理区域，同时将RF等离子体源功率感应耦合到工艺区域 。 通过将等离子体源功率的总量以感应和电容耦合到腔室中的水平提供期望的等离子体离子密度来建立特定的等离子体离子密度水平。 通过调节电容耦合功率和电感耦合功率之间的比例来控制处理区域等离子体中的化学物质分布或含量，同时继续保持总等离子体源功率的水平。 该方法还包括对工件应用独立可调的LF偏置功率和HF偏置功率，并通过调整LF和HF偏置功率之间的比例来调节工件表面处的离子能量的平均值和总体分布。

公开(公告)号：US20070212896A1

公开(公告)日：2007-09-13

申请号：US11683984

申请日：2007-03-08

申请人： Christopher Olsen ,  Thai Chua ,  Steven Hung ,  Patricia Liu ,  Tatsuya Sato ,  Alex Paterson ,  Valentin Todorov ,  John Holland

发明人： Christopher Olsen ,  Thai Chua ,  Steven Hung ,  Patricia Liu ,  Tatsuya Sato ,  Alex Paterson ,  Valentin Todorov ,  John Holland

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02175 ,  H01J37/32082 ,  H01J37/32146 ,  H01L21/02148 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31155 ,  H01L21/3144 ,  H01L21/316 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513

摘要： The present invention generally provides methods and apparatuses that are adapted to form a high quality dielectric gate layer on a substrate. Embodiments contemplate a method wherein a metal plasma treatment process is used in lieu of a standard nitridization process to form a high dielectric constant layer on a substrate. Embodiments further contemplate an apparatus adapted to “implant” metal ions of relatively low energy in order to reduce ion bombardment damage to the gate dielectric layer, such as a silicon dioxide layer and to avoid incorporation of the metal atoms into the underlying silicon. In general, the process includes the steps of forming a high-k dielectric and then terminating the surface of the deposited high-k material to form a good interface between the gate electrode and the high-k dielectric material.

摘要翻译： 本发明通常提供适于在衬底上形成高质量电介质栅极层的方法和装置。 实施例考虑了一种方法，其中使用金属等离子体处理工艺代替标准氮化工艺以在衬底上形成高介电常数层。 实施例进一步考虑了一种适于“植入”相对较低能量的金属离子的装置，以便减少对诸如二氧化硅层的栅极介电层的离子轰击损伤，并避免将金属原子并入到下面的硅中。 通常，该方法包括以下步骤：形成高k电介质，然后终止沉积的高k材料的表面，以在栅电极和高k电介质材料之间形成良好的界面。

公开(公告)号：USD549597S1

公开(公告)日：2007-08-28

申请号：US29226269

申请日：2005-03-25

申请人： Stephanie Kraus ,  Chris Heatherly ,  Randal Ouye ,  Julie Nishioka ,  John Holland ,  Jeffrey Sand

设计人： Stephanie Kraus ,  Chris Heatherly ,  Randal Ouye ,  Julie Nishioka ,  John Holland ,  Jeffrey Sand

公开(公告)号：US20070139856A1

公开(公告)日：2007-06-21

申请号：US11531474

申请日：2006-09-13

申请人： John Holland ,  Theodoros Panagopoulos ,  Alexander Matyushkin ,  Dan Katz ,  Michael Hegarty ,  Denis Koosau ,  Nicolas Gani

发明人： John Holland ,  Theodoros Panagopoulos ,  Alexander Matyushkin ,  Dan Katz ,  Michael Hegarty ,  Denis Koosau ,  Nicolas Gani

IPC分类号： H01T23/00

CPC分类号： H01L21/67109 ,  H01L21/67103 ,  H01L21/6831

摘要： A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes an electrostatic chuck coupled to a metallic base. The electrostatic chuck includes at least one chucking electrode and metallic base includes at least two fluidly isolated conduit loops disposed therein. In another embodiment, the pedestal assembly includes a support member that is coupled to a base by a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby controlling the temperature profile of a substrate disposed on the support member.

摘要翻译： 提供了一种用于在处理期间控制基板的温度的基座组件和方法。 在一个实施例中，基座组件包括联接到金属基座的静电卡盘。 静电吸盘包括至少一个夹紧电极和金属底座，其包括设置在其中的至少两个流体隔离的导管环。 在另一个实施例中，基座组件包括通过材料层联接到基座的支撑构件。 材料层具有至少两个具有不同导热系数的区域。 在另一个实施例中，支撑构件是静电卡盘。 在另外的实施例中，基座组件具有形成在基部和支撑构件之间的通道，用于在材料层附近提供冷却气体，以进一步控制支撑构件和基座之间的热传递，由此控制设置在基座上的基板的温度分布 支持会员

公开(公告)号：US20070042603A1

公开(公告)日：2007-02-22

申请号：US11367004

申请日：2006-03-02

申请人： Thomas Kropewnicki ,  Theodoros Panagopoulos ,  Nicolas Gani ,  Wilfred Pau ,  Meihua Shen ,  John Holland

发明人： Thomas Kropewnicki ,  Theodoros Panagopoulos ,  Nicolas Gani ,  Wilfred Pau ,  Meihua Shen ,  John Holland

IPC分类号： G01L21/30 ,  H01L21/302

CPC分类号： H01L21/32137 ,  H01L22/20

摘要： Embodiments of the invention generally provide methods for etching a substrate. In one embodiment, the method includes determining a substrate temperature target profile that corresponds to a uniform deposition rate of etch by-products on a substrate, preferentially regulating a temperature of a first portion of a substrate support relative to a second portion of the substrate support to obtain the substrate temperature target profile on the substrate, and etching the substrate on the preferentially regulated substrate support. In another embodiment, the method includes providing a substrate in a processing chamber having a selectable distribution of species within the processing chamber and a substrate support with lateral temperature control, wherein a temperature profile induced by the substrate support and a selection of species distribution comprise a control parameter set, etching a first layer of material and etching a second layer of material respectively using different control parameter sets.

摘要翻译： 本发明的实施例通常提供蚀刻衬底的方法。 在一个实施例中，该方法包括确定对应于衬底上的蚀刻副产物的均匀沉积速率的衬底温度目标分布，优选地调节衬底支撑件的第一部分相对于衬底支撑件的第二部分的温度 以获得衬底上的衬底温度目标曲线，并且在优先调节的衬底支撑件上蚀刻衬底。 在另一个实施例中，该方法包括在处理室中提供衬底，该处理室具有在处理室内的物质的可选择分布以及具有侧向温度控制的衬底支撑件，其中由衬底支撑件引导的温度曲线和物种分布的选择包括 控制参数集，蚀刻第一层材料并使用不同的控制参数集分别蚀刻第二层材料。

公开(公告)号：US20070029474A1

公开(公告)日：2007-02-08

申请号：US11352301

申请日：2006-02-13

申请人： Robert Cotter ,  Benjamin Gardner ,  John Holland

发明人： Robert Cotter ,  Benjamin Gardner ,  John Holland

IPC分类号： H01J49/00

CPC分类号： H01J49/40 ,  H01J49/10

摘要： A time-of-flight mass spectrometer which has an iron source, an evacuated tube proximate the ion source and adapted to receive ions from the ion source, and a detector disposed at an end of the evacuated tube opposite an end proximate the ion source. The ion source is constructed to generate an electric field that changes non-linearly as a function of position along a path from the ion source to the detector. The ion source is constructed to generate an electric field that changes as a function of time, the electric field being provided to accelerate ions from the ion source to the detector.

摘要翻译： 飞行时间质谱仪，其具有铁源，靠近离子源的真空管，并适于接收离子源的离子;以及检测器，设置在与靠近离子源的端部相对的真空管的端部处。 离子源被构造成产生电场，该电场作为沿着从离子源到检测器的路径的位置的函数而非线性地变化。 离子源被构造成产生随时间变化的电场，提供电场以加速离子从离子源到检测器的离子。