公开(公告)号：US20100122231A1

公开(公告)日：2010-05-13

申请号：US12269477

申请日：2008-11-12

申请人： Kanak B. Agarwal ,  Shayak Banerjee ,  Praveen Elakkumanan ,  Lars W. Liebmann

发明人： Kanak B. Agarwal ,  Shayak Banerjee ,  Praveen Elakkumanan ,  Lars W. Liebmann

IPC分类号： G06F17/50

CPC分类号： G06F17/5081 ,  G03F1/36 ,  G06F2217/10

摘要： A contour of a mask design for an integrated circuit is modified to compensate for systematic variations arising from non-optical effects such as stress, well proximity, rapid thermal anneal, or spacer thickness. Electrical characteristics of a simulated integrated circuit chip fabricated using the mask design are extracted and compared to design specifications, and one or more edges of the contour are adjusted to reduce the systematic variation until the electrical characteristic is within specification. The particular electrical characteristic preferably depends on which layer is to be fabricated from the mask: on-current for a polysilicon; resistance for contact; resistance and capacitance for metal; current for active; and resistance for vias. For systematic threshold voltage variation, the contour is adjusted to match a gate length which corresponds to an on-current value according to pre-calculated curves for contour current and gate length at a nominal threshold voltage of the chip.

摘要翻译： 改进了用于集成电路的掩模设计的轮廓，以补偿由非光学效应（例如应力，阱接近度，快速热退火或间隔物厚度）引起的系统变化。 提取使用掩模设计制造的模拟集成电路芯片的电气特性，并将其与设计规范进行比较，并调整轮廓的一个或多个边缘以减少系统变化，直到电气特性在规格范围内。 特定的电特性优选地取决于由掩模制成的层：多晶硅的导通电流; 接触阻力; 金属电阻和电容; 当前活跃; 和通孔阻力。 对于系统阈值电压变化，调整轮廓以根据芯片的标称阈值电压下的轮廓电流和栅极长度的预先计算的曲线来匹配对应于导通电流值的栅极长度。

公开(公告)号：US07622942B2

公开(公告)日：2009-11-24

申请号：US12147024

申请日：2008-06-26

申请人： Kanak B. Agarwal ,  Ying Liu ,  Chandler T. McDowell ,  Sani R. Nassif ,  James F. Plusquellic ,  Jayakumaran Sivagnaname

发明人： Kanak B. Agarwal ,  Ying Liu ,  Chandler T. McDowell ,  Sani R. Nassif ,  James F. Plusquellic ,  Jayakumaran Sivagnaname

IPC分类号： G01R31/26

CPC分类号： G01R31/3004 ,  G11C11/41 ,  G11C29/02 ,  G11C29/12005 ,  G11C29/50 ,  G11C2029/1202 ,  G11C2029/1204 ,  G11C2029/5004 ,  G11C2029/5006

摘要： A test structure for statistical characterization of local device mismatches contains densely populated SRAM devices arranged in a row/column addressable array that enables resource sharing of many devices. The test structure includes a built-in sensing mechanism to calibrate or null out sources of error, and current steering to avoid negative effects of current leakage along spurious paths. The gate and drain lines of each column are driven from both the top and bottom to minimizes parasitic effects. The system can handle a large number of devices while still providing high spatial resolution of current measurements.

摘要翻译： 用于局部器件不匹配的统计表征的测试结构包含布置在行/列可寻址阵列中的密集填充的SRAM器件，其使许多器件的资源共享。 该测试结构包括一个校准或消除误差源的内置感测机构，以及电流转向，以避免杂散路径上的电流泄漏的负面影响。 每列的栅极和漏极线都从顶部和底部驱动以最小化寄生效应。 该系统可以处理大量设备，同时仍然提供高空间分辨率的电流测量。

公开(公告)号：US20090251167A1

公开(公告)日：2009-10-08

申请号：US12061077

申请日：2008-04-02

申请人： Kanak B. Agarwal ,  Nazmul Habib ,  Jerry D. Hayes ,  John Greg Massey ,  Alvin W. Strong

发明人： Kanak B. Agarwal ,  Nazmul Habib ,  Jerry D. Hayes ,  John Greg Massey ,  Alvin W. Strong

IPC分类号： G01R31/26

CPC分类号： G01R31/2621 ,  G01R31/3004

摘要： A method and test circuit provide measurements to aid in the understanding of time-varying threshold voltage changes such as negative bias temperature instability and positive bias temperature instability. In order to provide accurate measurements during an early stage in the threshold variation, a current generating circuit is integrated on a substrate with the device under test, which may be a device selected from among an array of devices. The current generating circuit may be a current mirror that responds to an externally-supplied current provided by a test system. A voltage source circuit may be included to hold the drain-source voltage of the transistor constant, although not required. A stress is applied prior to the measurement phase, which may include a controllable relaxation period after the stress is removed.

摘要翻译： 一种方法和测试电路提供测量以帮助理解时变阈值电压变化，例如负偏压温度不稳定性和正偏压温度不稳定性。 为了在阈值变化的早期阶段提供精确的测量，电流产生电路与被测器件集成在衬底上，其可以是从器件阵列中选择的器件。 电流产生电路可以是响应于由测试系统提供的外部供应电流的电流镜。 可以包括电压源电路以保持晶体管的漏 - 源电压恒定，尽管不是必需的。 在测量阶段之前施加应力，其可以包括在应力消除之后的可控松弛周期。

公开(公告)号：US20090160477A1

公开(公告)日：2009-06-25

申请号：US11961442

申请日：2007-12-20

申请人： Kanak B. Agarwal ,  Jerry D. Hayes ,  Sani R. Nassif

发明人： Kanak B. Agarwal ,  Jerry D. Hayes ,  Sani R. Nassif

IPC分类号： G01R31/01 ,  G01R31/26

CPC分类号： G01R31/2884 ,  G01R31/2831 ,  G01R31/318533 ,  G01R31/318558

摘要： A method and test system for fast determination of parameter variation statistics provides a mechanism for determining process variation and parameter statistics using low computing power and readily available test equipment. A test array having individually selectable devices is stimulated under computer control to select each of the devices sequentially. A test output from the array provides a current or voltage that dependent on a particular device parameter. The sequential selection of the devices produces a voltage or current waveform, characteristics of which are measured using a digital multi-meter that is interfaced to the computer. The rms value of the current or voltage at the test output is an indication of the standard deviation of the parameter variation and the DC value of the current or voltage is an indication of the mean value of the parameter.

摘要翻译： 用于快速确定参数变化统计的方法和测试系统提供了使用低计算能力和容易获得的测试设备来确定过程变化和参数统计的机制。 在计算机控制下刺激具有可单独选择的装置的测试阵列以依次选择每个装置。 阵列的测试输出提供依赖于特定器件参数的电流或电压。 器件的顺序选择产生电压或电流波形，其特性使用与计算机连接的数字万用表进行测量。 测试输出端的电流或电压的有效值表示参数变化的标准偏差，电流或电压的直流值表示参数的平均值。

公开(公告)号：US20090160463A1

公开(公告)日：2009-06-25

申请号：US12361891

申请日：2009-01-29

申请人： Kanak B. Agarwal ,  Jerry D. Hayes ,  Sani R. Nassif

发明人： Kanak B. Agarwal ,  Jerry D. Hayes ,  Sani R. Nassif

IPC分类号： G01R27/26

CPC分类号： G01R31/2884 ,  G01R31/2831 ,  G01R31/318533 ,  G01R31/318558

摘要： A test circuit for fast determination of device capacitance variation statistics provides a mechanism for determining process variation and parameter statistics using low computing power and readily available test equipment. A test array having individually selectable devices is stimulated under computer control to select each of the devices sequentially. A test output from the array provides a current or voltage that dependent on a particular device parameter. The sequential selection of the devices produces a voltage or current waveform, characteristics of which are measured using a digital multi-meter that is interfaced to the computer. The rms value of the current or voltage at the test output is an indication of the standard deviation of the parameter variation and the DC value of the current or voltage is an indication of the mean value of the parameter.

摘要翻译： 用于快速确定器件电容变化统计的测试电路提供了一种使用低计算能力和易于获得的测试设备来确定过程变化和参数统计的机制。 在计算机控制下刺激具有可单独选择的装置的测试阵列以依次选择每个装置。 阵列的测试输出提供依赖于特定器件参数的电流或电压。 器件的顺序选择产生电压或电流波形，其特性使用与计算机连接的数字万用表进行测量。 测试输出端的电流或电压的有效值表示参数变化的标准偏差，电流或电压的直流值表示参数的平均值。

公开(公告)号：US20080258750A1

公开(公告)日：2008-10-23

申请号：US12147277

申请日：2008-06-26

申请人： Kanak B. Agarwal ,  Sani R. Nassif

发明人： Kanak B. Agarwal ,  Sani R. Nassif

IPC分类号： G01R31/26

CPC分类号： G01R31/2884 ,  G01R31/2621 ,  G01R31/275

摘要： A method of measuring threshold voltage variation using a device array provides accurate threshold voltage distribution values for process verification and improvement. The characterization array imposes a fixed drain-source voltage and a constant channel current at individual devices within the array. Another circuit senses the source voltage of the individual device within the array. The statistical distribution of the threshold voltage is determined directly from the source voltage distribution by offsetting each source voltage by a value determined by completely characterizing one or more devices within the array. The resulting methodology avoids the necessity of otherwise characterizing each device within the array, thus reducing measurement time dramatically.

摘要翻译： 使用器件阵列测量阈值电压变化的方法为处理验证和改进提供了准确的阈值电压分布值。 表征阵列在阵列内的各个器件上施加固定的漏源电压和恒定沟道电流。 另一个电路感测阵列内各个器件的源极电压。 阈值电压的统计分布直接由源电压分布确定，通过将每个源极电压抵消通过完全表征阵列内的一个或多个器件而确定的值。 所得到的方法避免了对阵列内的每个器件进行表征的必要性，从而显着地减少了测量时间。

公开(公告)号：US07423446B2

公开(公告)日：2008-09-09

申请号：US11462186

申请日：2006-08-03

申请人： Kanak B. Agarwal ,  Sani R. Nassif

发明人： Kanak B. Agarwal ,  Sani R. Nassif

IPC分类号： G01R31/26

CPC分类号： G01R31/2884 ,  G01R31/2621 ,  G01R31/275

摘要： A method for determining threshold voltage variation rapidly provides accurate threshold voltage distribution values for process verification and improvement. The method operates a characterization away including a circuit for imposing a fixed drain-source voltage and a constant channel current at individual devices within the array, while sensing the source voltage of the individual device. The statistical distribution of the threshold voltage is determined directly from the source voltage distribution by offsetting each source voltage by a value determined by completely characterizing one or more devices within the array. The resulting methodology avoids the necessity of otherwise characterizing each device within the array, thus reducing measurement time dramatically.

摘要翻译： 用于确定阈值电压变化的方法快速提供用于过程验证和改进的精确的阈值电压分布值。 该方法操作表征，包括用于在阵列内的各个器件处施加固定的漏极 - 源极电压和恒定沟道电流的电路，同时检测各个器件的源极电压。 阈值电压的统计分布直接由源电压分布确定，通过将每个源极电压抵消通过完全表征阵列内的一个或多个器件而确定的值。 所得到的方法避免了对阵列内的每个器件进行表征的必要性，从而显着地减少了测量时间。

公开(公告)号：US20080195337A1

公开(公告)日：2008-08-14

申请号：US11673025

申请日：2007-02-09

申请人： Kanak B. Agarwal ,  Sani R. Nassif

发明人： Kanak B. Agarwal ,  Sani R. Nassif

IPC分类号： G01R31/28 ,  H03K3/03 ,  G06F19/00 ,  G01R23/02

CPC分类号： G01R31/2884 ,  G01R31/318577 ,  H03K3/0315 ,  H03K2005/00058 ,  H03K2005/00234

摘要： A scannable virtual rail method and ring oscillator circuit for measuring variations in device characteristics provides the ability to study random device characteristic variation as well as systematic differences between N-channel and P-channel devices using a ring oscillator frequency measurement. The ring oscillator is operated from at least one virtual power supply rail that is connected to the actual power supply rail by a plurality of transistors controlled by a programmable source. The transistors are physically distributed along the physical distribution of the ring oscillator elements and each can be enabled in turn and the variation in ring oscillator frequency measured. The ring oscillator frequency measurements yield information about the variation between the transistors and N-channel vs. P-channel variation can be studied by employing positive and negative virtual power supply rails with corresponding P-channel and N-channel control transistors.

摘要翻译： 用于测量器件特性变化的可扫描虚拟轨迹法和环形振荡器电路提供了研究随机器件特性变化以及使用环形振荡器频率测量的N沟道和P沟道器件之间的系统差异的能力。 环形振荡器通过由可编程源控制的多个晶体管连接到实际电源轨的至少一个虚拟电源轨来操作。 晶体管沿着环形振荡器元件的物理分布物理分布，并且可以依次启用晶体管，并测量环形振荡器频率的变化。 可以通过使用具有相应P沟道和N沟道控制晶体管的正和负虚拟电源轨来研究环形振荡器频率测量产生关于晶体管与N沟道与P沟道变化之间变化的信息。